Silicon Planar PIN Photodiode
EAPDSZ4439A4
Features
․High
sensitivity
․Low
capacitance
․Short
switching time
․Wide
temperature range
․Small
package
․Pb
free
․The
product itself will remain within RoHS compliant version.
Descriptions
‧EAPDSZ4439A4
is high sensitivity, fast switching times, low capacitance, compact size,
and lack of measurable degradation make it suitable for diverse applications, such as TV and
appliance remote control, IR sound transmission, video recorders, and measurement and
control.
Applications
․High
speed photo detector
․Copier
․Elevator
Device Selection Guide
Part Category
EAPDSZ4439A4
Chip
Material
Silicon
Lens Color
Water clear
1
Copyright © 2013, Everlight All Rights Reserved. Release Date : 3/27/2014. Issue No:DPD-0000158. Rev:4
www.everlight.com
Data Sheet
Silicon Planar PIN Photodiode
EAPDSZ4439A4
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.1mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature *1
Power Dissipation at(or below)
25℃Free Air Temperature
Symbol
V
R
T
opr
T
stg
T
sol
P
d
Rating
32
-25 ~ +85
-40 ~ +85
260
150
Units
V
℃
℃
℃
mW
Notes:
*1:Soldering time≦5 seconds.
2
Copyright © 2013, Everlight All Rights Reserved. Release Date : 3/27/2014. Issue No:DPD-0000158. Rev:4
www.everlight.com
Data Sheet
Silicon Planar PIN Photodiode
EAPDSZ4439A4
Electro-Optical Characteristics (Ta=25℃)
Parameter
Rang Of Spectral Bandwidth
Wavelength Of Peak Sensitivity
Short- Circuit Current
Symbol
λ
0.5
λ
P
I
SC
Condition
---
---
Ee=1mW/cm
2
λp=875nm
Ee=1mW/cm
2
λp=875nm
V
R
=5V
Ee=0mW/cm
2
V
R
=10V
Ee=0mW/cm
2
I
R
=100μA
Ee=1mW/cm
2
λp=940nm
Ee=1mW/cm
2
λp=940nm
Min
400
---
---
Typ
---
940
35
Max
1100
---
---
Unit
nm
nm
μA
Reverse Light Current
I
L
17
---
25
---
μA
Reverse Dark Current
I
D
5
30
nA
Reverse Breakdown Voltage
V
BR
32
170
---
V
Temperature coefficient of V
oc
TK
Voc
---
-2.6
---
mV/K
Temperature coefficient of I
sc
TK
Isc
---
-0.1
---
%/K
3
Copyright © 2013, Everlight All Rights Reserved. Release Date : 3/27/2014. Issue No:DPD-0000158. Rev:4
www.everlight.com
Data Sheet
Silicon Planar PIN Photodiode
EAPDSZ4439A4
Typical Electro-Optical Characteristics Curves
Fig.1 Spectral Sensitivity
Fig. 2 Reverse Light Current vs. Ee
1.0
Ta=25 C
0.8
0.6
0.4
0.2
0
100 300 500 700 900 1100 1300
4
Copyright © 2013, Everlight All Rights Reserved. Release Date : 3/27/2014. Issue No:DPD-0000158. Rev:4
www.everlight.com
Data Sheet
Silicon Planar PIN Photodiode
EAPDSZ4439A4
Precautions For Use
1. Over-current-proof
Customer must apply resistors for protection,otherwise slight voltage shift will cause big
current change (Burn out will happen).
2. Storage
2.1 Do not open moisture proof bag before the products are ready to use.
2.2 Before opening the package: The LEDs should be kept at 30℃ or less and 90%RH or less.
2.3 The LEDs should be used within a year.
2.4 After opening the package, the LEDs should be kept at 30℃ or less and 60%RH or less.
2.5 The LEDs should be used within 168 hours (7 days) after opening the package.
2.6 If the moisture absorbent material (silica gel) has faded away or the LEDs have exceeded the
storage time, baking treatment should be performed using the following conditions.
Baking treatment : 60±5℃ for 48 hours.
3. Soldering Condition
3.1 Pb-free solder temperature profile
3.2 Reflow soldering should not be done more than two times.
3.3 When soldering, do not put stress on the LEDs during heating.
3.4 After soldering, do not warp the circuit board.
5
Copyright © 2013, Everlight All Rights Reserved. Release Date : 3/27/2014. Issue No:DPD-0000158. Rev:4
www.everlight.com
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
