BPX-43-4: 产品描述Phototransistors PHOTODIODE; 产品类别光电子/LED; 文件大小284KB，共11页; 制造商Osram Opto Semiconductor; 官网地址https://www.osram.com/index-2.jsp

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BPX-43-4概述

Phototransistors PHOTODIODE

BPX-43-4规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Osram Opto Semiconductor
产品种类 Product Category	Phototransistors
RoHS	Details
产品 Product	Phototransistors
封装 / 箱体 Package / Case	TO-18
安装风格 Mounting Style	Through Hole
Peak Wavelength	880 nm
Maximum On-State Collector Current	50 mA
Collector- Emitter Voltage VCEO Max	50 V
Dark Current	20 nA
Rise Time	15 us
Fall Time	15 us
Pd-功率耗散 Pd - Power Dissipation	220 mW
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 125 C
高度 Height	6.2 mm
长度 Length	5.6 mm
Lens Color/Style	Clear
类型 Type	Silicon NPN Phototransistor
Wavelength	880 nm
宽度 Width	5.6 mm
Collector-Emitter Breakdown Voltage	50 V
Collector-Emitter Saturation Voltage	240 mV
Half Intensity Angle Degrees	15 deg
Light Current	4 mA
工厂包装数量 Factory Pack Quantity	1000

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2014-01-14

Silicon NPN Phototransistor

NPN-Silizium-Fototransistor

Version 1.1

BPX 43

•

Spectral range of sensitivity:

(typ) 450 ... 1100

•

Package:

Metal Can (TO-18), hermetically sealed

•

Special:

Base connection

Suitable up to 125°C

High linearity

Available in groups

Features:

•

Spektraler Bereich der Fotoempfindlichkeit:

(typ) 450 ... 1100 nm

•

Gehäuse:

Metall Gehäuse (TO-18), hermetisch

dicht

•

Besonderheit:

Basisanschluss

• Geeignet bis zu 125°C

• Hohe Linearität

• Gruppiert lieferbar

Besondere Merkmale:

Applications

• Photointerrupters

• Industrial electronics

• For control and drive circuits

Anwendungen

• Lichtschranken

• Industrieelektronik

• Messen / Steuern / Regeln

2014-01-14

BPX-43-4相似产品对比

	BPX-43-4	BPX-43-4-5
描述	Phototransistors PHOTODIODE	Phototransistors PHOTODIODE
Product Attribute	Attribute Value	Attribute Value
制造商 Manufacturer	Osram Opto Semiconductor	Osram Opto Semiconductor
产品种类 Product Category	Phototransistors	Phototransistors
RoHS	Details	Details
产品 Product	Phototransistors	Phototransistors
封装 / 箱体 Package / Case	TO-18	TO-18
安装风格 Mounting Style	Through Hole	Through Hole
Peak Wavelength	880 nm	880 nm
Maximum On-State Collector Current	50 mA	50 mA
Collector- Emitter Voltage VCEO Max	50 V	50 V
Dark Current	20 nA	20 nA
Rise Time	15 us	18 us
Fall Time	15 us	18 us
Pd-功率耗散 Pd - Power Dissipation	220 mW	220 mW
最小工作温度 Minimum Operating Temperature	- 40 C	- 40 C
最大工作温度 Maximum Operating Temperature	+ 125 C	+ 125 C
高度 Height	6.2 mm	6.2 mm
长度 Length	5.6 mm	5.6 mm
Lens Color/Style	Clear	Clear
类型 Type	Silicon NPN Phototransistor	Silicon NPN Phototransistor
Wavelength	880 nm	880 nm
宽度 Width	5.6 mm	5.6 mm
Collector-Emitter Breakdown Voltage	50 V	50 V
Collector-Emitter Saturation Voltage	240 mV	260 mV
Half Intensity Angle Degrees	15 deg	15 deg
Light Current	4 mA	2 mA
工厂包装数量 Factory Pack Quantity	1000	1000

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