SMD
B
EASV1003Y0
Features
․Package
in 8mm tape on 7〞diameter reel.
․Compatible
with automatic placement equipment.
․Compatible
with infrared and vapor phase reflow solder process.
․Mono-color
type.
․Pb-free.
․The
product itself will remain within RoHS compliant version.
․Compliance
with EU REACH.
․Compliance
Halogen Free .(Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm).
Description
․The
SMD LED is much smaller than lead frame type components, thus enable smaller board size, higher packing density,
reduced storage space and finally smaller equipment to be obtained.
․Besides,
lightweight makes them ideal for miniature applications. etc.
Applications
․Backlighting
in dashboard and switch.
․Telecommunication:
indicator and backlighting in telephone and fax.
․Flat
backlight for LCD, switch and symbol.
․General
use.
1
Copyright © 2010, Everlight Americas Inc. All Rights Reserved. Release Date : 27-Sep-2012. Issue No: 1 Rev.1
www.everlightamericas.com
DATASHEET
SMD B
EASV1003Y0
Device Selection Guide
Chip
Materials
AlGaInP
Emitted Color
Brilliant Yellow
Resin Color
Water Clear
Absolute Maximum Ratings (Ta=25
℃
)
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
(Duty 1/10 @1KHz)
Power Dissipation
Electrostatic Discharge
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
V
R
I
F
I
FP
Pd
ESD
HBM
T
opr
Tstg
Tsol
Rating
5
25
60
60
2000
-40 ~ +85
-40 ~ +90
Unit
V
mA
mA
mW
V
℃
℃
Reflow Soldering : 260
℃
for 10 sec.
Hand Soldering : 350
℃
for 3 sec.
2
Copyright © 2010, Everlight Americas Inc. All Rights Reserved. Release Date : 27-Sep-2012. Issue No: 1 Rev.1
www.everlightamericas.com
DATASHEET
SMD B
EASV1003Y0
Electro-Optical Characteristics (Ta=25
℃
)
Parameter
Luminous
Intensity
Viewing Angle
Peak
Wavelength
Dominant
Wavelength
Spectrum
Radiation
Bandwidth
Forward
Voltage
Reverse
Current
Symbol
Iv
2θ
1/2
Min.
72.0
-----
Typ.
-----
125
Max.
180
-----
Unit
mcd
deg
Condition
λp
-----
591
-----
nm
I
F
=20mA
λd
586
-----
594
nm
△λ
V
F
I
R
-----
1.75
-----
15
-----
-----
-----
2.35
10
nm
V
μA
V
R
=5V
Note:
1.Tolerance of Luminous Intensity: ±11%
2.Tolerance of Dominant Wavelength ±1nm
3. Tolerance of Forward Voltage: ±0.1V
3
Copyright © 2010, Everlight Americas Inc. All Rights Reserved. Release Date : 27-Sep-2012. Issue No: 1 Rev.1
www.everlightamericas.com
DATASHEET
SMD B
EASV1003Y0
Bin Range of Luminous Intensity
Bin Code
Q1
Q2
R1
R2
Min.
72.0
90.0
112
140
Max.
90.0
112
140
180
mcd
I
F
=20mA
Unit
Condition
Bin Range Of Dom. Wavelength
Bin Code
DD1
DD2
DD3
DD4
Min.
586
588
590
592
Max.
588
590
592
594
nm
I
F
=20mA
Unit
Condition
Bin Range Of Forward Voltage
Bin Code
0
1
2
Min.
1.75
1.95
2.15
Max.
1.95
2.15
2.35
V
I
F
=20mA
Unit
Condition
Note:
1.Tolerance of Luminous Intensity: ±11%
2.Tolerance of Dominant Wavelength ±1nm
3. Tolerance of Forward Voltage: ±0.1V
4
Copyright © 2010, Everlight Americas Inc. All Rights Reserved. Release Date : 27-Sep-2012. Issue No: 1 Rev.1
www.everlightamericas.com
DATASHEET
SMD B
EASV1003Y0
Typical Electro-Optical Characteristics Curves
Forward Current vs.
Forward Voltage
Ta=25°C
I
F
(mA)
Relative luminous intensity (%
Spectrum Distribution
Ta=25°C
Forward Current
Wavelength
λ
(nm)
Luminous Intensity vs.
Ambient Temperature
Relative luminous intensity ( )
%
Relative luminous intensity ( )
%
Forward Voltage V
F
(V)
Luminous Intensity vs.
Forward Current
Ta=25°C
Ambient Temperature Ta (°C)
Forward Current Derating Curve
Forward Current I
F
(mA)
Radiation Diagram
Ta=25°C
Forward Current
I
F
(mA)
Ambient Temperature Ta (°C)
5
Copyright © 2010, Everlight Americas Inc. All Rights Reserved. Release Date : 27-Sep-2012. Issue No: 1 Rev.1
www.everlightamericas.com
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