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FM25VN02-DGTR

产品描述Memory Circuit, 32KX8, CMOS, PDSO8, 4 X 4.50 MM, 0.95 MM PITCH, GREEN, TDFN-8
产品类别存储    存储   
文件大小434KB,共17页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
下载文档 详细参数 选型对比 全文预览

FM25VN02-DGTR概述

Memory Circuit, 32KX8, CMOS, PDSO8, 4 X 4.50 MM, 0.95 MM PITCH, GREEN, TDFN-8

FM25VN02-DGTR规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码DFN
包装说明HVSON, SOLCC8,.16,37
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-N8
JESD-609代码e3
长度4.5 mm
内存密度262144 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数32768 words
字数代码32000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织32KX8
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装等效代码SOLCC8,.16,37
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)260
电源3.3 V
认证状态Not Qualified
座面最大高度0.85 mm
最大待机电流0.00015 A
最大压摆率0.0025 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层MATTE TIN
端子形式NO LEAD
端子节距0.95 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度4 mm
Base Number Matches1

文档预览

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Pre-Production
FM25V02
256Kb Serial 3V F-RAM Memory
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 40 MHz Frequency
Direct Hardware Replacement for Serial Flash
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Device ID and Serial Number
Device ID reads out Manufacturer ID & Part ID
Unique Serial Number (FM25VN02)
Low Voltage, Low Power
Low Voltage Operation 2.0V – 3.6V
90
A
Standby Current (typ.)
5
A
Sleep Mode Current (typ.)
Industry Standard Configurations
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS SOIC Package
8-pin “Green”/RoHS TDFN Package
Description
The FM25V02 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25V02 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling. The product offers very high write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25V02 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of Serial Flash can
cause data loss.
The FM25V02 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The devices use the high-speed SPI bus, which
enhances the high-speed write capability of F-RAM
technology. The FM25VN02 is offered with a unique
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change the
specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Rev. 2.1
Nov. 2011
serial number that is read-only and can be used to
identify a board or system. Both devices incorporate
a read-only Device ID that allows the host to
determine the manufacturer, product density, and
product revision. The devices are guaranteed over an
industrial temperature range of -40°C to +85°C.
Pin Configuration
S
Q
W
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
C
D
/S
Q
/W
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
C
D
Top View
Pin Name
/S
/W
/HOLD
C
D
Q
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Page 1 of 17

FM25VN02-DGTR相似产品对比

FM25VN02-DGTR FM25VN02-DG
描述 Memory Circuit, 32KX8, CMOS, PDSO8, 4 X 4.50 MM, 0.95 MM PITCH, GREEN, TDFN-8 Memory Circuit, 32KX8, CMOS, PDSO8, 4 X 4.50 MM, 0.95 MM PITCH, GREEN, TDFN-8
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
零件包装代码 DFN DFN
包装说明 HVSON, SOLCC8,.16,37 HVSON, SOLCC8,.16,37
针数 8 8
Reach Compliance Code unknown unknown
JESD-30 代码 R-PDSO-N8 R-PDSO-N8
JESD-609代码 e3 e3
长度 4.5 mm 4.5 mm
内存密度 262144 bit 262144 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8
湿度敏感等级 1 1
功能数量 1 1
端子数量 8 8
字数 32768 words 32768 words
字数代码 32000 32000
工作模式 SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
组织 32KX8 32KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 HVSON HVSON
封装等效代码 SOLCC8,.16,37 SOLCC8,.16,37
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度) 260 260
电源 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified
座面最大高度 0.85 mm 0.85 mm
最大待机电流 0.00015 A 0.00015 A
最大压摆率 0.0025 mA 0.0025 mA
最大供电电压 (Vsup) 3.6 V 3.6 V
最小供电电压 (Vsup) 2 V 2 V
标称供电电压 (Vsup) 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 MATTE TIN MATTE TIN
端子形式 NO LEAD NO LEAD
端子节距 0.95 mm 0.95 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
宽度 4 mm 4 mm
Base Number Matches 1 1

 
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