The AH110 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve performance over a broad range with +39
dBm OIP3 and +23 dBm of compressed 1-dB power. It is
housed in a lead-free/green/RoHS-compliant SOT-89 SMT
package. All devices are 100% RF and DC tested.
The product is targeted for use as a gain block/driver
amplifier for various current and next generation wireless
technologies such as GPRS, GSM and CDMA, where high
linearity and medium power is required. In addition, the
AH110 will work for numerous other applications within
50 to 2000 MHz frequency range.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
•
Mobile Infrastructure
•
Defense/Homeland Security
Function
Input / Base
Output / Collector
Ground
Pin No.
1
3
2, 4
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output OIP3
Test Frequency
Gain
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1900 MHz
Typical Performance
(5)
Units
MHz
MHz
dB
dBm
dBm
MHz
dB
dBm
dBm
dBm
dB
mA
V
85
Min
50
Typ
900
20.5
+23
+39
1900
17.6
+23
+40
+16
5.2
100
5
Max
2000
Parameters
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3
(6)
IS-95A Channel Power
(7)
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Typical
900
1900
20.5
17.6
-20
-17
-9.5
-7.4
+22.8
+23
+39
+38
+17
+16
5
5.2
+8 V @ 100 mA
17
+38
Noise Figure
Operating Current Range
(3)
Device Voltage
(4)
135
5. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +8 V, I
cc
=
100 mA, +25
°C,
Rbias = 30
Ω.
6. The recommended configuration with the 1.5pF output shunt capacitor placed at 39˚ away from pin
3 will yield 2 dB lower OIP3 than the maximum achievable OIP3, but will have improved S22 and
gain flatness performance. Refer to note 2 for more information.
7. This is measured with an IS-95 signal at (9 ch. Fwd) at -45dBc ACPR.
1. Test conditions unless otherwise noted: 25
°C,
Vsupply = +8V, in tuned application circuit with
Rbias = 30
Ω.
2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. OIP3 is
tested using a tuned fixture for optimal OIP3. Specifically, the 1.5pF output shunt capacitor is
placed at 44˚ away from pin 3. The application circuit is tuned for optimum ACPR performance.
OIP3 performance shown elsewhere in this datasheet corresponds to the 1.5pF capacitor placed at
39˚ away from pin 3. The recommended configuration will yield 2 dB lower OIP3, but will have
improved S22 and gain flatness performance.
3. This corresponds to the quiescent current or operating current under small-signal conditions.
4. This device requires a minimum 7 V power supply through a dropping resistor. 8 V and 30 ohms
are recommended for proper operation. Operation of the device directly to a 5 V supply could lead
to thermal damage to the device.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Junction Temperature
-40 to +85
°C
-55 to +150
°C
+15 dBm
+6 V
150 mA
+250
°C
Rating
Ordering Information
Part No.
AH110-89G
AH110-89PCB900
AH110-89PCB1900
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 package)
900 MHz Evaluation Board
1900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 5
May 2006
AH110
30
The Communications Edge
TM
Product Information
0.2 Watt, High Linearity InGaP HBT Amplifier
S-parameters (V
device
= +5V, I
cc
= 100 mA, 25
°C,
unmatched 50 ohm system)
Swp Max
2.01283GHz
2.
0
Typical Device Data
S11
1.0
0.8
1.0
0
3.
2.
0
DB(|S[2,1]|)
25
Gain (dB)
DB(GMax)
0.
4
6
0.
6
0.
0.8
Gain / Maximum Stable Gain
S22
Swp Max
2.01283GHz
0
4.
5.0
0.2
10.0
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
20
0
0
15
-0.8
-0.8
0
0.5
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 2500 MHz, with markers placed at 0.25 – 2 GHz in 0.25 GHz increments.
S-Parameters (V
device
= +5 V, I
cc
= 100 mA, T = 25
°C,
unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2500
-5.21
-4.92
-4.72
-4.31
-4.10
-4.19
-4.63
-5.64
-7.84
-13.52
-19.89
-6.99
-2.84
-1.18
-0.78
-158.20
-170.08
-177.73
173.22
163.26
152.57
140.41
126.43
109.08
83.27
-85.25
-131.98
-160.75
177.40
167.87
27.34
25.32
24.15
22.43
20.91
19.68
18.82
18.35
18.13
18.12
17.78
16.44
14.09
10.90
9.28
141.96
144.95
138.50
118.30
100.56
85.04
69.98
54.85
38.12
17.54
-7.75
-37.07
-64.48
-86.11
-96.04
-32.11
-31.61
-31.37
-30.63
-30.32
-29.78
-29.74
-29.31
-29.86
-31.16
-34.99
-34.48
-29.33
-26.64
-25.96
16.29
9.45
6.88
7.98
5.52
2.65
-2.18
-11.26
-26.72
-52.52
-105.12
161.53
106.22
75.52
66.16
-6.58
-7.49
-7.96
-8.46
-8.81
-9.07
-9.12
-8.95
-8.04
-6.16
-3.43
-1.36
-0.69
-0.93
-1.28
-1.0
-1.0
1
Frequency (GHz)
1.5
2
-0
.6
-0
.6
.0
-2
.0
-2
10
.4
-0
.4
-0
Swp Min
0.01483GHz
Swp Min
0.01483GHz
-132.30
-157.02
-171.72
178.73
174.06
171.40
169.67
170.98
175.14
179.09
176.43
164.56
149.67
136.25
130.16
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
C12
C7
C9 C8
Circuit Board Material: .014” Getek, 4-layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors.
The markers and vias are spaced in .050” increments.
C7/C8 are for 900 MHz matching circuits and C9/C12 are for 1900 MHz matching circuits.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 5
May 2006
-4
.0
-5.
0
-3
.0
-4
.0
-5.
0
2
-0.
2
-0.
-10.0
0.
4
0
3.
0
4.
5.0
-10.0
-3
.0
0.2
10.0
AH110
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+9 dBm / tone, 1 MHz spacing)
The Communications Edge
TM
Product Information
0.2 Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (AH110-89PCB900)
Typical RF Performance at 25
°C
900 MHz
20.5 dB
-20 dB
-9.5 dB
+22.8 dBm
+39 dBm
+17 dBm
5 dB
+5 V
100 mA
RES
ID=R4
R=22 Ohm
DIODE1
ID=D1
+8 V
RES
ID=R1
R=30 Ohm
CAP
ID=C3
C=.1uF
8.2 v
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
RES
ID=R3
R=220 Ohm
RES
ID=R2
R=390 Ohm
CAP
ID=C2
C=1000 pF
PORT
P=1
Z=50 Ohm
CAP
ID=C6
C=56 pF
IND
ID=L2
L=33 nH
IND
ID=L1
L=10 nH
SUBCKT
NET="AH110"
CAP
ID=C1
C=56 pF
PORT
P=2
Z=50 Ohm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device Voltage
Quiescent Current
CAP
ID=C4
C=56 pF
CAP
ID=C7
C=5.6 pF
CAP
ID=C8
C=0.8 pF
CAP
ID=C5
C=56 pF
RES
ID=R5
R=50 Ohm
C7 is placed at silkscreen marker ‘C’ or center of component placed at 5.6 deg @ 900 MHz away from pin 1.
C8 is placed at 22 deg. @ 900 MHz away from pin 3.
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