ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Dual Channel
A
C
C
A
A
C
C
1
2
3
4
1
2
3
4
5
6
7
8
D E
V
8 E
7 C
6 C
5 E
16 E
15 C
14 C
13 E
12 E
11 C
10 C
9 E
FEATURES
• Current transfer ratio at I
F
= 10 mA
• Isolation test voltage, 5300 V
RMS
• Compliant to RoHS Directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• CSA 93751
• BSI IEC 60950; IEC 60065
• DIN EN 60747-5-2 (VDE 0884) available with option 1
• FIMKO
Quad Channel
A
A
C
C
A
i179015-3
i179012-1
DESCRIPTION
The ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5 are optically coupled
isolated pairs employing GaAs infrared LEDs and silicon
NPN phototransistor. Signal information, including a DC
level, can be transmitted by the drive while maintaining a
high degree of electrical isolation between input and output.
The ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5 are especially
designed for driving medium-speed logic and can be used
to eliminate troublesome ground loop and noise problems.
Also these couplers can be used to replace relays and
transformers in many digital interface applications such as
CTR modulation.
The ILD1, ILD2, ILD5 has two isolated channels in a single
DIP package and the ILQ1, ILQ2, ILQ5 has four isolated
channels per package.
ORDERING INFORMATION
DIP-#
Option 6
I
L
x
#
-
X
0
#
#
T
TAPE AND
REEL
7.62 mm
Option 7
10.16 mm
PART NUMBER
x = D (Dual) or Q (Quad)
PACKAGE OPTION
Option 9
> 0.7 mm
> 0.1 mm
AGENCY CERTIFIED/PACKAGE
UL, CSA, BSI, FIMKO
DIP-8
DIP-8, 400 mil, option 6
SMD-8, option 7
SMD-8, option 9
DIP-16
DIP-16, 400 mil, option 6
SMD-16, option 7
SMD-16, option 9
20 to 300
ILD1
-
ILD1-X007T
-
-
-
-
(1)
DUAL CHANNEL
CTR (%)
100 to 500
ILD2
ILD2-X006
ILD2-X007T
-
-
-
-
(1)
QUAD CHANNEL
50 to 400
ILD5
-
-
ILD5-X009T
(1)
-
-
-
-
20 to 300
-
-
-
-
ILQ1
ILQ1-X006
ILQ1-X007
ILQ1-X009T
(1)
100 to 500
-
-
-
-
ILQ2
ILQ2-X006
ILQ2-X007T
(1)
ILQ2-X009T
(1)
50 to 400
-
-
-
-
ILQ5
-
-
ILQ5-X009T
(1)
ILD1-X009T
(1)
ILD2-X009T
(1)
Rev. 1.8, 28-Jun-11
1
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83646
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
www.vishay.com
DUAL CHANNEL
CTR (%)
20 to 300
ILD1-X001
-
-
ILD1-X019T
-
-
-
100 to 500
ILD2-X001
ILD2-X016
ILD2-X017
-
-
-
-
50 to 400
ILD5-X001
-
-
-
-
-
-
20 to 300
-
-
-
-
-
-
-
100 to 500
-
-
-
-
ILQ2-X001
ILQ2-X016
ILQ2-X017T
(1)
Vishay Semiconductors
QUAD CHANNEL
50 to 400
-
-
-
-
-
-
-
AGENCY CERTIFIED/PACKAGE
VDE, UL, CSA, BSI, FIMKO
DIP-8
DIP-8, 400 mil, option 6
SMD-8, option 7
SMD-8, option 9
DIP-16
DIP-16, 400 mil, option 6
SMD-16, option 7
Notes
• Additional options may be possible, please contact sales office.
(1)
Also available in tubes; do not put T on end.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
OUTPUT
ILD1
ILQ1
Collector emitter reverse voltage
ILD2
ILQ2
ILD5
ILQ5
Collector current
Power dissipation
Derate lineary from 25 °C
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation resistance
Package power dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
(2)
TEST CONDITION
PART
SYMBOL
V
R
I
F
I
FSM
P
diss
VALUE
6
60
2.5
100
1.3
UNIT
V
mA
A
mW
mW/°C
V
V
V
V
V
V
mA
mA
mW
mW/°C
V
CEO
V
CEO
V
CEO
V
CEO
V
CEO
V
CEO
I
C
I
C
P
diss
50
50
70
70
70
70
50
400
200
2.6
t < 1 ms
V
ISO
5300
7
7
V
RMS
mm
mm
mW
mW/°C
°C
°C
°C
°C
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
P
tot
T
stg
T
amb
T
j
10
12
10
11
250
3.3
- 40 to + 150
- 40 to + 100
100
260
2 mm from case bottom
T
sld
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for throught
hole devices (DIP).
Rev. 1.8, 28-Jun-11
2
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83646
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current
Saturation voltage, collector emitter
DC forward current gain
DC forward current gain saturated
Thermal resistance, junction to lead
COUPLER
Capacitance (input to output)
V
IO
= 0 V, f = 1 MHz
C
IO
0.8
pF
V
CE
= 5 V, f = 1 MHz
V
VCE
= 10 V
I
C
= 1 mA, I
B
= 20 μA
V
CE
= 10 V, I
B
= 20 μA
V
CE
= 0.4 V, I
B
= 20 μA
C
CE
I
CEO
V
CESAT
h
FE
h
FEsat
R
thjl
200
120
6.8
5
0.25
650
400
500
50
0.4
1800
600
K/W
pF
nA
V
I
F
= 60 mA
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
V
F
I
R
C
O
T
thJL
1.25
0.01
25
750
1.65
10
V
μA
pF
K/W
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
ILD1
ILQ1
I
F
=10 mA, V
CE
= 0.4 V
ILD2
ILQ2
ILD5
I
C
/I
F
(collector emitter
saturated)
ILQ5
ILD1
ILQ1
I
F
=10 mA, V
CE
= 10 V
ILD2
ILQ2
ILD5
ILQ5
SYMBOL
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CE
CTR
CE
CTR
CE
CTR
CE
CTR
CE
CTR
CE
20
20
100
100
50
50
MIN.
TYP.
75
75
170
170
100
100
80
80
200
200
130
130
300
300
500
500
400
400
MAX.
UNIT
%
%
%
%
%
%
%
%
%
%
%
%
Rev. 1.8, 28-Jun-11
3
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83646
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
www.vishay.com
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
Isolation test voltage
between emitter and detector
Isolation resistance
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
Rated impulse voltage
Maximum working voltage
Forward current
Power dissipation
Safety temperature
Creepage distance
Clearance distance
Insulation distance
per IEC 60950 2.10.5.1
Recurring peak voltage
CTI
V
IOTM
V
IORM
I
SI
P
SO
T
SI
7.0
7.0
0.4
175
10
890
275
400
175
kV
V
mA
mW
°C
mm
mm
mm
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
TEST CONDITION
SYMBOL
V
ISO
R
IO
MIN.
5300
10
12
10
11
55/100/21
TYP.
MAX.
UNIT
V
RMS
Note
• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). These optocouplers are suitable for “safety electrical insulation” only within the
safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
V
IOTM
t
1
, t
2
t
3
, t
4
t
test
t
stres
V
pd
IR-diode
I
SI
(mA)
450
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
Phototransistor
P
SO
(mW)
= 1 s to 10 s
=1s
= 10 s
= 12 s
V
IOWM
V
IORM
0
t
3
t
test
t
4
t
1
t
Tr
= 60 s
t
2
t
stres
t
T
SI
- Safety Temperature (°C)
Fig. 1 - Derating Diagram
13930
Fig. 2 - Test Pulse Diagram for Sample Test according
to DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
Rev. 1.8, 28-Jun-11
4
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83646
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
www.vishay.com
Vishay Semiconductors
PART
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
SYMBOL
I
F
I
F
I
F
I
F
I
F
I
F
t
D
t
D
t
D
t
D
t
D
t
D
t
r
t
r
t
r
t
r
t
r
t
r
t
s
t
s
t
s
t
s
t
s
t
s
t
f
t
f
t
f
t
f
t
f
t
f
t
PHL
t
PHL
t
PHL
t
PHL
t
PHL
t
PHL
t
PLH
t
PLH
t
PLH
t
PLH
t
PLH
t
PLH
MIN.
TYP.
20
20
5
5
10
10
0.8
0.8
1.7
1.7
1.7
1.7
1.9
1.9
2.6
2.6
2.6
2.6
0.2
0.2
0.4
0.4
0.4
0.4
1.4
1.4
2.2
2.2
2.2
2.2
0.7
0.7
1.2
1.2
1.1
1.1
1.4
1.4
2.3
2.3
2.5
2.5
MAX.
UNIT
mA
mA
mA
mA
mA
mA
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
NON-SATURATED
TEST CONDITION
Current
V
CE
= 5 V, R
L
= 75
,
50 % of V
PP
Delay
V
CE
= 5 V, R
L
= 75
,
50 % of V
PP
Rise time
V
CE
= 5 V, R
L
= 75
,
50 % of V
PP
Storage
V
CE
= 5 V, R
L
= 75
,
50 % of V
PP
Fall time
V
CE
= 5 V, R
L
= 75
,
50 % of V
PP
Propagation H to L
V
CE
= 5 V, R
L
= 75
,
50 % of V
PP
Propagation L to H
V
CE
= 5 V, R
L
= 75
,
50 % of V
PP
Rev. 1.8, 28-Jun-11
5
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83646
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
