LCP02-150B1
Protection IC for ringing SLICs
Datasheet
−
production data
Features
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Protection IC recommended for ringing SLICs
Wide firing voltage range: -120 V to +120 V
Low gate triggering current: I
G
= 5 mA max
Peak pulse current: I
PP
= 30 A (10/1000 µs)
Holding current: I
H
= 150 mA min.
UL497B approved (file E136224)
SO-8 wide
LCP02-150B1
Applications
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Dual battery supply voltage SLICs
– negative battery supply configuration
– negative and positive battery supply
configuration
Central office (CO)
Private branch exchange (PBX)
Digital loop carrier (DLC)
Description
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Asymmetrical digital subscriber line
(ADSL G.Lite)
Fiber in the loop (FITL)
Wireless local loop (WLL)
Hybrid fiber coax (HFC)
ISDN terminal adapter
Cable modem
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The LCP02-150B1 has been developed to protect
SLICs operating on both negative and positive
battery supplies, as well as high voltage SLICs. It
provides crowbar mode protection for both TIP
and RING lines. The surge suppression is
managed for each wire by two thyristor structures,
one dedicated to positive surges the second one
for negative surges. Both positive and negative
threshold levels are programmable by two gates
(Gn and Gp). The use of transistors decreases
the battery currents during surge suppression.
LCP02-150B1 can be used to help equipment to
meet various standards such as UL1950,
IEC 60950 / CSAC22.2, UL1459 and TIA-968-A
(formerly FCC part68). A Trisil™ meets UL94 V0
(Trisils are UL497B approved - file: E136224).
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TM: Trisil is a trademark of STMicroelectronics
June 2012
This is information on a product in full production.
Doc ID 7275 Rev 8
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www.st.com
10
LCP02-150B1
Table 2.
Symbol
I
PP
Peak pulse current
Non repetitive surge peak on-state current (F = 50 Hz)
I
TSM
value specified for each line
I
TSM
value can be applied on both lines at the same time
(GND capability is twice the line I
TSM
)
Negative battery voltage range
Positive battery voltage range
Operating junction temperature range
Storage temperature range
Lead solder temperature (10 s duration)
Characteristics
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
10/1000 µs
5/310 µs
2/10µs
t
p
= 0.2 s
t
p
= 1 s
t
p
= 15 min.
Value
30
45
100
9
6
1.9
-120 to 0
0 to +120
Unit
A
I
TSM
A
V
Gn
V
Gp
T
j
T
stg
T
L
V
°C
°C
°C
-40 to +125
-55 to +150
Figure 3.
Pulse waveform
% I
PP
100
50
0
Table 3.
Symbol
R
th(j-a)
Thermal resistance
Junction to ambient
Table 4.
Symbol
O
bs
I
Gn
I
H-
V
DGL-
et
l
o
Parameters related to the negative suppressor
Parameter
Test conditions
V
Gn/GND
= -60 V
Measured at 50 Hz
Go-No Go test, V
Gn
= -60 V
V
Gn/GND
= -60 V
10/700 µs
1.2/50 µs
2 kV
2 kV
R
P
= 25
Ω
R
P
= 25
Ω
I
PP
= 30 A
I
PP
= 30 A
8
15
V
150
Min.
Max. Unit
5
mA
mA
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260
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Parameter
Value
150
Unit
°C/W
Negative gate trigger current
Holding current (see
Figure 4)
Dynamic switching voltage
Gn / Line
(1)
1. The V
DGL
value is the difference between the peak line voltage during the surge and the programmed gate voltage.
Doc ID 7275 Rev 8
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Characteristics
Table 5.
Symbol
I
Gp
V
DGL+
LCP02-150B1
Parameters related to the positive suppressor
Parameter
Positive gate trigger current
Test conditions
V
Gp/GND
= 60 V, measured at 50 Hz
V
Gp/GND
= 60 V
Dynamic switching voltage Gp / Line
(1)
10/700 µs
1.2/50 µs
2 kV
2 kV
R
P
= 25
Ω
R
P
= 25
Ω
I
PP
= 30 A
I
PP
= 30 A
8
35
V
Min. Max. Unit
5
mA
1. The V
DGL
value is the difference between the peak line voltage during the surge and the programmed gate voltage.
Table 6.
Symbol
I
R
C
off
Parameters related to line/GND
Parameter
Reverse leakage current
Capacitance LINE/GND
T
j
= 25 °C
T
j
= 25 °C
Test conditions
V
LINE
= +120 V V
Gp/LINE
= +1 V
V
LINE
= -120 V V
Gn/LINE
= -1 V
Min.
Max.
5
5
V
R
= -3 V, F =1 MHz, V
Gp
= 60 V, V
Gn
= -60 V
Table 7.
Symbol
C
G
Recommended gate capacitance
Component
Gate decoupling capacitance
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Min.
100
r
P
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Typ.
220
uc
60
s)
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Unit
µA
pF
Max.
Unit
nF
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Doc ID 7275 Rev 8
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