CM1248-04QG
EDS Protection Diode
Low Capacitance
Features
•
Low I/O Capacitance at 10 pF at 0 V
•
In−System ESD Protection to
±15
kV Contact Discharge,
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per the IEC 61000−4−2 International Standard
•
Compact SMT Package Saves Board Space and Facilitates Layout
in Space−Critical Applications
•
Each I/O Pin Can Withstand over 1000 ESD Strikes
•
These Devices are Pb−Free and are RoHS Compliant
UDFN−6
QG SUFFIX
CASE 517BM
BLOCK DIAGRAM
CM1248−04QG
Pin 6
V
N
Pin 4
Pin 1
V
N
Pin 3
MARKING DIAGRAM
LR
LR = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
†
CM1248−04QG uDFN−0.4 mm 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
August, 2017
−
Rev. 4
1
Publication Order Number:
CM1248−04QG/D
CM1248−04QG
PACKAGE / PINOUT DIAGRAMS
Top View
Pin 1
Pin 2
Pin 3
Pin 6
Pin 5
Pin 4
6−Lead uDFN (.4 mm)
CM1248−04QG
Table 1. PIN DESCRIPTIONS
Pins
(Refer to package / pinout diagrams)
(Refer to package / pinout diagrams)
Name
CHx
V
N
Description
The cathode of the respective surge protection diode, which should be connected to
the node requiring transient voltage protection.
The anode of the surge protection diodes.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
Rating
−65
to +150
Units
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature
Rating
−40
to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
(Note 1)
Symbol
C
IN
Parameter
Channel Input Capacitance
Conditions
T
A
= 25°C, 0 VDC, 1 MHz; Note 2
0 VDC, 1 MHz; Note 1
DC
IN
V
RSO
I
LEAK
V
SIG
Differential Channel I/O to GND Capacitance
Reverse Stand−off Voltage
T
A
= 25°C, 2.5 VDC, 1 MHz; Note 2
I
R
= 10
mA,
T
A
= 25°C
I
R
= 1 mA, T
A
= 25°C
Leakage Current
V
IN
= 5.0 VDC, T
A
= 25°C
V
IN
= 5.0 VDC, Note 1
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
ESD Withstand Voltage
Contact Discharge per IEC 61000−4−2 standard
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
I = 10 mA, T
A
= 25°C
I =
−10
mA, T
A
= 25°C
T
A
= 25°C
(Notes 2, 4 and 5)
T
A
= 25°C
(Notes 2 and 3)
±15
0.57
1.36
6.8
−0.89
5.5
6.1
0.25
0.75
7
0.19
Min
Typ
10
15
Max
Units
pF
pF
pF
V
V
mA
mA
V
V
ESD
R
D
kV
W
1.
2.
3.
4.
5.
All parameters specified at T
A
=
−40°C
to +85°C unless otherwise noted.
These parameters guaranteed by design and characterization.
Human Body Model per MIL−STD−883, Method 3015, C
Discharge
= 100 pF, R
Discharge
= 1.5 KW, V
N
grounded.
Standard IEC 61000−4−2 with C
Discharge
= 150 pF, R
Discharge
= 330
W,
V
N
grounded.
These measurements performed with no external capacitor on Pin
X
.
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2
CM1248−04QG
PACKAGE DIMENSIONS
UDFN6, 1.25x1, 0.4P
CASE 517BM−01
ISSUE O
D
PIN ONE
REFERENCE
2X
2X
A B
L1
E
L
L
0.10 C
ALTERNATE TERMINAL
CONSTRUCTIONS
DETAIL A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
0.10 C
DETAIL B
0.10 C
0.08 C
NOTE 4
(A3)
A
A1
SIDE VIEW
DETAIL A
1
3
6X
C
L
SEATING
PLANE
ALTERNATE
CONSTRUCTIONS
A1
DETAIL B
6
4
6X
b
e
BOTTOM VIEW
0.10 C A B
0.05 C
NOTE 3
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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◊
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4
ÇÇ
ÉÉ
ÉÉ
6X
ÇÇÇ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉ
TOP VIEW
EXPOSED Cu
MOLD CMPD
A3
DIM
A
A1
A3
b
D
E
e
L
L1
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.15 REF
0.15
0.25
1.25 BSC
1.00 BSC
0.40 BSC
0.20
0.40
−−−
0.15
RECOMMENDED
SOLDERING FOOTPRINT*
0.25
0.53
1.30
PACKAGE
OUTLINE
1
6X
0.40
PITCH
DIMENSION: MILLIMETERS
CM1248−04QG/D