®
SMP100-xxx
SMP100-xxxH225
TRISIL
TM
FEATURES
BIDIRECTIONAL CROWBAR PROTECTION
VOLTAGE RANGE : FROM 8V to 320V
REPETITIVE PEAK PULSE CURRENT:
I
PP
= 100 A (10/1000
µ
s)
HOLDING CURRENT: I
H
= 150mA or 225mA
LOW LEAKAGE CURRENT: I
R
= 2
µA
max
DESCRIPTION
The SMP100 series are transient surge ar-
restors used for the protection of sensitive tele-
com equipment.
MAIN APPLICATIONS
Any sensitive equipment requiring protection
against lightning strikes :
ANALOG AND DIGITAL LINE CARDS
MAIN DISTRIBUTION FRAMES
TERMINALS AND TRANSMISSION
EQUIPMENT
GAS-TUBE REPLACEMENT
BENEFITS
NO AGEING AND NO NOISE
IF DESTROYED, THE SMP100 FALLS INTO
SHORT CIRCUIT,STILLENSURINGPROTECTION
BOARD SPACE SAVING
SMB
(JEDEC DO-214AA)
SCHEMATIC DIAGRAM
COMPLIES WITH THE
FOLLOWING STANDARDS:
CCITT K20
VDE0433
VDE0878
IEC-1000-4-5
FCC Part 68
BELLCORE TR-NWT-001089
Peak Surge
Voltage
(V)
4000
4000
4000
level 4
level 4
1500
800
2500
1000
Voltage
Waveform
(µs)
10/700
10/700
1.2/50
10/700
1.2/50
10/160
10/560
2/10
10/1000
Current
Waveform
(µs)
5/310
5/310
1/20
5/310
8/20
10/160
10/560
2/10
10/1000
Admissible
Ipp
(A)
100
100
100
100
100
200
100
500
100
Necessary
Resistor
(Ω)
-
-
-
-
-
-
-
-
-
1/8
March 1998 - Ed : 4
SMP100-xxx / SMP100-xxxH225
THERMAL RESISTANCES
Symbol
R
th(j-I)
R
th(j-a)
Junction to leads
Junction to ambient on printed circuit
(with standard footprint dimensions)
Parameter
Value
20
100
Unit
°C/W
°C/W
ABSOLUTE MAXIMUM RATINGS
(T
amb
=
25°C)
Symbol
I
pp
Parameter
Peak pulse current:
10/1000
µ
s (open circuit voltage waveform 1 kV 10/1000
µ
s)
8/20
µ
s
(open circuit voltage waveform 4 kV 1.2/50
µ
s)
2/10
µs
(open circuit voltage waveform 2.5kV 2/10
µs)
Fail-safe mode
Non repetitive surge peak on-state current
One cycle
Non repetitive surge peak on-state current
F = 50Hz
T
L
T
stg
Tj
Maximum lead temperature for soldering during 10s
Storage temperature range
Maximum junction temperature
8/20
µ
s
50Hz
60Hz
0.2s
2s
Value
100
250
500
5
55
60
25
12
260
- 55 to + 150
150
Unit
A
A
A
kA
A
A
A
A
°C
°C
°C
I
FS
I
TSM
Note 1:
Pulse waveform
10 / 1000
µs
8 / 20
µs
5 / 310
µ
s
1 / 20
µ
s
2 / 10
µs
tr = 10
µs
tr = 8
µs
tr = 5
µ
s
tr = 1
µ
s
tr = 2
µs
tp = 1000
µs
tp = 20
µs
tp = 310
µ
s
tp = 20
µ
s
tp = 10
µs
% IPP
100
50
0
tr
tp
t
2/8
®
SMP100-xxx / SMP100-xxxH225
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
Symbol
V
RM
I
RM
V
R
I
R
V
BR
V
BO
I
H
I
BO
I
PP
C
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Continuous Reverse voltage
Continuous Reverse current
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
STATIC PARAMETERS
Type
I
RM
@ V
RM
max.
µ
A
SMP100-8
SMP100-65
SMP100-140
SMP100-200
SMP100-230
SMP100-270
SMP100-320
SMP100-140H225
SMP100-200H225
SMP100-230H225
SMP100-270H225
2
2
2
2
2
2
2
2
2
2
2
V
6
55
120
170
200
230
270
120
170
200
230
I
R
@ V
R
max.
note 1
µ
A
50
50
50
50
50
50
50
50
50
50
50
V
8
65
140
200
230
270
320
140
200
230
270
V
BO
@ I
BO
max.
note 2
V
20
80
200
265
300
350
470
200
265
300
350
mA
800
800
800
800
800
800
800
800
800
800
800
I
H
min.
note 3
mA
50(typ)
150
150
150
150
150
150
225
225
225
225
C
max.
note 4
pF
100
200
150
150
150
150
150
150
150
150
150
Note 1 :
IR measured at VR guarantees VBR>VR
Note 2 :
Measured at 50Hz, see test circuit 1. In any case VBOmin
≥
VBR
Note 3 :
See functional holding current test circuit 2.
Note 4 :
VR=1V bias, VRMS=1V, F=1MHz.
3/8
®
SMP100-xxx / SMP100-xxxH225
DYNAMIC PARAMETERS
Symbol
Test conditions (see note 5)
Type
SMP100-8
SMP100-65
SMP100-140
SMP100-200
Test conditions 1
dV/dt = 100 V/
µ
s, di/dt < 10 A/
µ
s, I
PP
= 100 A
V
BO
Test conditions 2
dV/dt = 1 kV/
µ
s, di/dt < 10 A/
µ
s, I
PP
= 10 A
SMP100-230
SMP100-270
SMP100-320
SMP100-140H225
SMP100-200H225
SMP100-230H225
SMP100-270H225
Note 5 :
VBO parameters are given by a KeyTek ’System 2’ generator with PN246I module.
See test circuits 3 for V BO dynamic parameters.
Max.
25
95
220
285
320
370
470
230
285
320
370
Unit
V
TEST CIRCUIT 1 FOR I
BO
and V
BO
parameters:
tp = 20ms
Auto
Transformer
220V/2A
static
relay.
K
R1
140
R2
240
220V
Vout
IBO
measure
Transformer
220V/800V
5A
D.U.T
V BO
measure
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
V
OUT
Selection
- Device with V
BO
<
200 Volt
- V
OUT
= 250 V
RMS
, R
1
= 140
Ω
.
- Device with V
BO
≥
200 Volt
- V
OUT
= 480 V
RMS
, R
2
= 240
Ω.
4/8
®
SMP100-xxx / SMP100-xxxH225
TEST CIRCUIT 2 for I
H
parameter.
R
D.U.T.
V
BAT
= - 48 V
Surge generator
- V
P
This is a GO-NO GO test which allows to confirm the holding current (I
H
) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the I
H
value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : I
pp
= 10A, 10/1000
µs.
- The D.U.T. will come back to the off-state within 50 ms max.
TEST CIRCUITS 3 FOR V
BO
DYNAMIC PARAMETERS
100 V /
µs,
di/dt < 10 A /
µs,
Ipp = 100 A
2
Ω
45
Ω
66
Ω
470
Ω
83
Ω
0.36 nF
46
µH
U
10
µF
KeyTek ’System 2’ generator with PN246I module
1 kV /
µs,
di/dt < 10 A /
µs,
Ipp = 10 A
26
µH
250
Ω
12
Ω
47
Ω
46
µH
U
60
µF
KeyTek ’System 2’ generator with PN246I module
5/8
®
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