CM6200
Advance Information
EMI Filters with ESD
Protection for Microphone
Interface
Description
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ON Semiconductor’s CM6200 is a 3x3, 8−bump EMI filter with
ESD protection device for microphone interface applications in a CSP
form factor, 0.4 mm pitch. The CM6200 is fully compliant with
IEC 61000−4−2 and is also RoHS II compliant.
Features
•
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
WLCSP−8
PLASTIC
CASE 567CF
PACKAGE PINOUT
3
A
B
C
A3
B3
C3
2
A2
B2
C2
1
A1
A1 Corner
Indicator
B1
C1
(Bottom View)
Figure 1. Electrical Schematic
MARKING DIAGRAM
Orientation
Marking
62
WWY
= CM6200
= Date Code
62
WWY
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
−
Rev. P5
1
Publication Order Number:
CM6200/D
CM6200
Pin Information
Table 1. PIN DESCRIPTIONS
Pin
A2
A3
B1
B2
ECI
Mic_Bias
Mic2p (External)
GND
Description
Pin
B3
C1
C2
C3
ASICp (Internal)
Mic2n (External)
GND
ASICn (Internal)
Description
Electrical Specifications and Conditions
Table 2. PARAMETERS AND OPERATING CONDITIONS
Parameter
Storage Temperature Range
Operating Temperature Range
Rating
−55
to +150
−40
to +85
Units
°C
°C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS
(Note 1)
Symbol
R11
R12
R21
R22
R31
C11, C12
C21, C22
I
LEAK_B
I
LEAK_C
V
B
V
ESD
Bias Resistance
Resistance
Resistance
Resistance
Resistance
Pin Capacitance
Pin Capacitance
Leakage Current from Pins B1 to B2
Diode Leakage Current from Filter C
Breakdown Voltage (Positive)
Breakdown Voltage (Negative)
ESD Protection Peak Discharge
Voltage at B1 and C1 pins
a) Contact discharge per
IEC 61000−4−2 standard and
b) Air discharge per
IEC 61000−4−2 standard
ESD Protection Peak Discharge
Voltage at A2, A3, B3, and C3 pins
a) Contact discharge per
IEC 61000−4−2 standard and
b) Air discharge per
IEC 61000−4−2 standard
At 1 MHz, V
IN
= 0 V
At 1 MHz, V
IN
= 0 V
V
IN
= 5 V; B3, A2 and A3 floating.
C1, C2, and C3 grounded.
V
IN
= 5 V; (Note 3)
I
f
= +1 mA (Filter B only); (Note 3)
I
f
=
−1
mA (Filter B only); (Note 3)
(Note 2)
±15
±15
(Note 2)
±2
±2
kV
13
−13
Parameter
Conditions
Min
1.9
0.8
1.76
1.76
20
0.67
1.0
Typ
2.0
1.0
2.20
2.20
25
0.83
1.25
1.0
1.0
100
Max
2.1
1.2
2.64
2.64
30
1.0
Units
kW
kW
kW
kW
W
nF
nF
nA
nA
V
V
kV
1. All parameters specified at T
A
= 25°C unless otherwise noted.
2. Standard IEC 61000−4−2 with C
Discharge
= 150 pF, R
Discharge
= 330
W.
3. Filter C parameters are guaranteed by similarity to Filter B.
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CM6200
Performance Information
Simulation
Figure 2. Typical Insertion Loss (Bias = 0 V, T
A
= 25°C; 50
W
Environment)
RF Characteristics
Figure 3. Typical Insertion Loss for Filter B (Bias = 0 V, T
A
= 25°C; 50
W
Environment);
Pins A2 and A3 Floating
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3
CM6200
RF Characteristics
Figure 4. Typical Insertion Loss for Filter C (Bias = 0 V, T
A
= 25°C; 50
W
Environment)
Vertical Structure Specification*
VERTICAL STRUCTURE DIMENSIONS
(nominal)
Ref.
a
h
d
Parameter
Die Thickness
Repassivation
UBM−(Ti/Cu)
Material
Silicon
Polyimide
Plated Cu
Sputtered Cu
Sputtered Ti
e
b
f
UBM Wetting Area
Diameter
Bump Standoff
Solder Bump Dia-
meter after Bump
Reflow
Metal Pad Height
Metal Pad Diameter
AlSiCu
Dimension
396
mm
10
mm
7.0
mm
0.4
mm
0.1
mm
240
mm
194
mm
270
mm
c
g
1.5
mm
310
mm
0.406 mm
Figure 5. Sectional View
*Daisy Chain CM6000
D2
D1
Finished Thickness
0.600 mm
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4
CM6200
Table 4. CSP TAPE AND REEL SPECIFICATIONS
†
Part Number
CM6200
Chip Size (mm)
1.20 X 1.20 X 0.60
Pocket Size (mm)
B
0
X A
0
X K
0
1.346 X 1.346 X 0.729
Tape Width
W
8 mm
Reel Dia.
178 mm (7″)
Qty Per Reel
5000
P
0
4 mm
P
1
4 mm
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Î
Î
Î
Î
+
+
+
Figure 6. Tape and Reel Mechanical Data
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5