LCDP1521
Dual-line programmable transient voltage suppressor for
SLIC protection
Features
■
■
■
■
■
■
■
dual-line programmable transient voltage
suppressor
wide negative firing voltage range
V
MGL
= -150 V max.
low dynamic switching voltages:
V
FP
and V
DGL
low gate triggering current: I
GT
= 5 mA max.
peak pulse current: I
PP
= 20 A (10/1000 µs)
holding current: I
H
= 150 mA min.
Figure 1.
Functional diagram
SO-8
Benefits
■
A Trisil™ is not subject to ageing and provides
a fail safe mode in short circuit for better
protection.
Trisils are used to help equipment meet various
standards such as UL1950, IEC 950 / CSA
C22.2, UL1459 and FCC part68.
Trisils have UL94 V0 approved resin.
Trisils are UL497B approved (file: E136224).
TIP 1
1
8
RING 1
■
■
■
GATE
2
7
GND
GATE
3
6
GND
Description
This device has been designed to protect 2 new
high voltage, as well as classical SLICs against
transient overvoltages.
Positive overvoltages are clamped by 2 diodes.
Negative surges are suppressed by 2 thyristors,
their breakdown voltage being referenced to
-V
BAT
through the gate.
This component presents a very low gate
triggering current (I
GT
) to reduce the current
consumption on printed circuit boards during the
firing phase.
TIP 2
4
5
RING 2
TM: Trisil is a trademark of STMicroelectronics
October 2010
Doc ID 8627 Rev 4
1/12
www.st.com
12
Compliant with the following standards
LCDP1521
1
Table 1.
Compliant with the following standards
Compliant with the following standards
Standard
Peak surge
voltage (V)
2500
1000
5000
1500
6000
1500
8000
15000
4000
2000
4000
2000
4000
4000
1500
800
1000
Voltage
waveform
2/10 µs
10/1000 µs
2/10 µs
2/10 µs
10/700 µs
1/60 ns
10/700 µs
1.2/50 µs
10/700 µs
1.2/50 µs
10/160 µs
10/560 µs
9/720 µs
Required
peak current
(A)
500
100
500
100
150
37.5
Current
waveform
2/10 µs
10/1000 µs
2/10 µs
2/10 µs
5/310 µs
Minimum serial
resistor to meet
standard (Ω)
31
40
62
7
200
20
0
0
120
40
27
0
120
27
43
32
0
GR-1089 Core
First level
GR-1089 Core
Second level
GR-1089 Core
Intra-building
ITU-T-K20/K21
ITU-T-K20
(IEC 61000-4-2)
VDE0433
VDE0878
IEC 61000-4-5
FCC Part 68, lightning
surge type A
FCC Part 68, lightning
surge type B
ESD contact discharge
ESD air discharge
100
50
100
50
100
100
200
100
25
5/310 µs
1/20 µs
5/310 µs
8/20 µs
10/160 µs
10/560 µs
5/320 µs
2/12
Doc ID 8627 Rev 4
LCDP1521
Characteristics
2
Table 2.
Characteristics
Thermal resistance
Symbol
R
th (j-a)
Parameter
Junction to ambient
Value
170
Unit
°C/W
Figure 2.
Electrical characteristics (T
amb
= 25 °C)
I
Symbol
IGT
IH
IRM
IRG
VRM
VGT
VF
VFP
VDGL
VGATE
VRG
C
Parameter
Gate triggering current
Holding current
Reverse leakage current line / GND
Reverse leakage current gate / line
Reverse voltage line / GND
Gate triggering voltage
Forward drop voltage line / GND
Peak forward voltage line / GND
Dynamic switching voltage gate / Line
Gate / Gnd voltage
Reverse voltage gate / Line
Capacitance line / GND
V
R
V
RM
V
F
I
RM
I
R
I
H
V
I
PP
Table 3.
Symbol
Absolute ratings (T
amb
= 25 °C, unless otherwise specified)
Parameter
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
t = 10 ms
t=1s
t = 10 ms
t = 10 ms
-40 °C < T
amb
< +85 °C
-40 °C < T
amb
< +85 °C
Value
20
60
20
25
30
60
70
5
3.5
0.125
2
-150
-150
- 55 to + 150
150
260
Unit
I
PP
Peak pulse current
(1)
A
I
TSM
I
2
t
I
GSM
V
MLG
V
MGL
T
stg
T
j
T
L
Non repetitive surge peak on-state
current (50 Hz sinusoidal)
I
2
t value for fusing (50 Hz sinusoidal)
Maximum gate current (50 Hz sinusoidal)
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s
A
A
2
s
A
V
°C
°C
1. For pulse waveform see
Figure 3.
Doc ID 8627 Rev 4
3/12
Characteristics
Figure 3.
Repetitive peak pulse current
% IPP
100
tr : rise time (µs)
tp: pulse duration (µs)
ex: Pulse waveform 10/1000 µs
tr = 10 µs tp = 1000 µs
LCDP1521
50
0
tr
tp
t
Table 4.
Symbol
V
F
V
FP(1)
Parameters related to the diode line / GND (T
amb
= 25 °C)
Test conditions
I
F
= 1 A
10/700 µs
1.2/50 µs
2/10 µs
1.5 kV
1.5 kV
2.5 kV
t = 500 µs
R
S
= 110
Ω
R
S
= 60
Ω
R
S
= 245
Ω
I
PP
= 10 A
I
PP
= 15 A
I
PP
= 10 A
Max
2
5
10
20
Unit
V
V
1. See
Figure 5: Test circuit for V
FP
and V
DGL
parameters.
R
S
is the protection resistor located on the line card.
Table 5.
Symbol
I
GT
I
H
V
GT
I
RG
Parameters related to the protection thyristor
(T
amb
= 25°C unless otherwise specified)
Test conditions
V
GND / LINE
= -48 V
V
GATE
= -48 V
(1)
At I
GT
V
RG
= -150 V
V
RG
= -150 V
V
GATE
= -48 V
(2)
R
S
= 110
Ω
R
S
= 60
Ω
R
S
= 245
Ω
T
c
= 25 °C
T
c
= 85 °C
Min
0.1
150
2.5
5
50
Max
5
Unit
mA
mA
V
µA
V
DGL
10/700 µs
1.2/50 µs
2/10 µs
1.5 kV
1.5 kV
2.5 kV
I
PP
= 10 A
I
PP
= 15 A
I
PP
= 10 A
5
10
20
V
1. See
Figure 4: Functional holding current (I
H
) test circuit: go no-go test
2. See
Figure 5: Test circuit for V
FP
and V
DGL
parameters.
The oscillations with a time duration lower than 50 ns are not taken
into account
Table 6.
Symbol
I
RM
C
Parameters related to diode and protection thyristor
(T
amb
= 25 °C, unless otherwise specified)
Test conditions
V
GATE / LINE
= -1 V
V
GATE / LINE
= -1 V
V
RM
= -150 V
V
RM
= -150 V
T
c
= 25 °C
T
c
= 85 °C
20
48
Typ.
Max.
5
50
Unit
µA
pF
V
R
= 50 V bias, V
RMS
= 1 V, F = 1 MHz
V
R
= 2 V bias, V
RMS
= 1 V, F = 1 MHz
4/12
Doc ID 8627 Rev 4
LCDP1521
Test circuits
3
3.1
Test circuits
Functional holding current (I
H
): go no-go test
Figure 4.
Functional holding current (I
H
) test circuit: go no-go test
R
Surge generator
VBAT
= -100 V
D.U.T
This is a go no-go test, which confirms the holding current (IH) level in a functional test circuit.
3.1.1
Test procedure
●
●
Adjust the current level at the I
H
value by short circuiting the D.U.T.
Fire the D.U.T. with a surge current: I
PP
= 10 A, 10/1000 µs.
The D.U.T. will come back to the off-state within a duration of 50 ms max.
3.2
Test circuit for V
FP
and V
DGL
parameters
Figure 5.
Test circuit for V
FP
and V
DGL
parameters
R4
TIP
L
R2
RING
R3
C1
R1
C2
(VP is defined in unloaded condition)
VP
GND
Doc ID 8627 Rev 4
5/12
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