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PUSBMxX4-TL series
N6
HX
High-speed USB OTG ESD protection diode arrays
Rev. 3 — 14 June 2012
Product data sheet
1. Product profile
1.1 General description
PUSBMxX4-TL is a series of four 4-channel ElectroStatic Discharge (ESD) diode arrays
for USB 2.0 (On-The-Go (OTG)) interfaces. The devices provide protection to
downstream components from ESD voltages up to
±8
kV contact discharge. They offer
three low capacitance ESD protection pins and one V
BUS
protection diode. They are
encapsulated in an ultra thin DFN1616-6 (SOT1189-1/XSON6) plastic package with
0.5 mm pitch. These features make the devices ideal for use in applications requiring
component miniaturization, such as mobile phone handsets.
SO
1.2 Features and benefits
Pb-free, Restriction of Hazardous Substances (RoHS) and Dark Green compliant
ESD protection according to IEC 61000-4-2 level 4:
±8
kV contact discharge
Electrical Fast Transients (EFT) protection according to IEC 61000-4-4 40A (5/50 ns)
Three pairs of ultra low capacitance (1.1 pF typ.) rail-to-rail ESD protection diodes
Ultra thin DFN1616-6 (SOT1189-1/XSON6) plastic package; 0.5 mm pitch
1.3 Applications
High-speed USB 2.0 and USB OTG connector ESD protection in:
Cellular phone and Personal Communication System (PCS) mobile handsets
Mobile internet devices
Digital still cameras
Portable media players
2. Pinning information
Table 1.
Pin
1
2
3
4
5
6
7
Pinning
Description
low capacitance ESD protection
low capacitance ESD protection
low capacitance ESD protection
not connected
not connected
V
BUS
ESD protection
ground (GND)
1
2
3
center pad
018aaa140
Simplified outline
6
5
4
Graphic symbol
6
1
7
2
3
Transparent top view
NXP Semiconductors
PUSBMxX4-TL series
High-speed USB OTG ESD protection diode arrays
3. Ordering information
Table 2.
Ordering information
Package
Name
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
DFN1616-6
Description
plastic, thermal enhanced extremely thin small outline package;
no leads; 6 terminals; body 1.6
×
1.6
×
0.5 mm
Version
SOT1189-1
Type number
4. Marking
Table 3.
Marking codes
Marking code
XE
XL
XO
30
Type number
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RWM
Parameter
reverse standoff voltage
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
V
ESD
P
PP
electrostatic discharge
voltage
peak pulse power
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
I
PP
peak pulse current
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
Conditions
pins 1, 2, 3
pin 6 (V
BUS
)
pin 6 (V
BUS
)
pin 6 (V
BUS
)
pin 6 (V
BUS
)
IEC 61000-4-2, level 4; pins 1, 2, 3, 6 to GND;
contact discharge
t
p
= 8/20
μs
pins 1, 2, 3; V
CL
= 12 V
pin 6 (V
BUS
); V
CL
= 9.2 V
pin 6 (V
BUS
); V
CL
= 16 V
pin 6 (V
BUS
); V
CL
= 22 V
pin 6 (V
BUS
); V
CL
= 43 V
t
p
= 8/20
μs
pins 1, 2, 3
pin 6 (V
BUS
)
pin 6 (V
BUS
)
pin 6 (V
BUS
)
pin 6 (V
BUS
)
-
-
-
-
-
3
12
6
3
2
A
A
A
A
A
-
-
-
-
-
35
100
100
100
100
W
W
W
W
W
[1]
Min
−0.5
−0.5
−0.5
−0.5
−0.5
-
Max
+5.5
+5.5
+12
+15
+30
±8
Unit
V
V
V
V
V
kV
PUSBMXX4-TL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 14 June 2012
2 of 10
NXP Semiconductors
PUSBMxX4-TL series
High-speed USB OTG ESD protection diode arrays
Table 4.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
reflow(peak)
T
amb
T
stg
[1]
Parameter
peak reflow temperature
ambient temperature
storage temperature
Conditions
t
p
≤
10 s
Min
-
−30
−55
Max
+260
+85
+150
Unit
°C
°C
°C
Device is qualified with 1000 pulses of
±8
kV contact discharges each, according to IEC61000-4-2 far exceeding level 4 (±8 kV contact
discharge).
6. Characteristics
Table 5.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
V
BRzd
C
(I/O-GND)
ΔC
(I/O-GND)
C
(I/O-I/O)
I
RM
V
BR
Parameter
forward voltage
Zener diode breakdown
voltage
input/output to ground
capacitance
input/output to ground
capacitance variation
input/output to input/output
capacitance
reverse leakage current
breakdown voltage
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
C
d
diode capacitance
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
I
RM
reverse leakage current
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
[1]
Guaranteed by design.
Conditions
Min
0.6
Typ
-
-
1.1
0.02
0.5
100
Max
1.2
10
1.3
-
-
1000
Unit
V
V
pF
pF
pF
nA
Low capacitance ESD protection
I
test
= 1 mA
V
bias(DC)
= 0.5 V; f = 1 MHz;
pins 1, 2, 3 to GND
V
bias(DC)
= 0.5 V; f = 1 MHz
V
bias(DC)
= 0.5 V; f = 1 MHz;
pins 1 to 2, 1 to 3, 2 to 3
pins 1, 2, 3 to GND; V
RWM
= 5.5 V
pin 6 (V
BUS
) to GND; I
test
= 1 mA
6.4
12.5
17
32
V
bias(DC)
= 0.5 V; f = 1 MHz;
pin 6 (V
BUS
) to GND
-
-
-
-
pin 6 (V
BUS
) to GND
V
RWM
= 5.5 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 30 V
-
-
-
-
200
1
1
1
500
100
100
100
nA
nA
nA
nA
165
73
60
50
220
100
90
70
pF
pF
pF
pF
6.8
14.5
18
36
7.2
16
19
40
V
V
V
V
[1]
6
-
-
-
-
V
BUS
ESD protection
PUSBMXX4-TL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 14 June 2012
3 of 10
NXP Semiconductors
PUSBMxX4-TL series
High-speed USB OTG ESD protection diode arrays
7. Application information
7.1 Typical application
The devices are designed to protect USB interfaces from downstream ESD. They offer
three low capacitance ESD protection channels for D−, D+ and ID and a high-voltage
ESD protection channel for V
BUS
.
1
2
3
4
5
MICRO-USB
1
2
3
V
BUS
D–
D+
ID
GND
PUSBMxX4-TL
6
5
4
7
018aaa141
Fig 1.
Application diagram (transparent package top view)
PUSBMXX4-TL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 14 June 2012
4 of 10
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