1N6464US: 产品描述Zener Diodes T DAP UNI 500W 15V SM; 产品类别分立半导体二极管; 文件大小125KB，共4页; 制造商SEMTECH; 官网地址http://www.semtech.com

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1N6464US概述

Zener Diodes T DAP UNI 500W 15V SM

1N6464US规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	SEMTECH
包装说明	O-LELF-N2
针数	2
Reach Compliance Code	unknown
ECCN代码	EAR99
Factory Lead Time	17 weeks
Is Samacsys	N
其他特性	HIGH RELIABILITY
最小击穿电压	16.4 V
最大钳位电压	26.5 V
配置	SINGLE
二极管元件材料	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码	O-LELF-N2
JESD-609代码	e0
元件数量	1
端子数量	2
封装主体材料	GLASS
封装形状	ROUND
封装形式	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED
极性	UNIDIRECTIONAL
最大功率耗散	3 W
认证状态	Not Qualified
最大重复峰值反向电压	15 V
表面贴装	YES
技术	AVALANCHE
端子面层	TIN LEAD
端子形式	NO LEAD
端子位置	END
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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1N6461US THRU 1N6468US

QPL 500 Watt Surface Mount TVS

POWER DISCRETES

Description

The 1N64xx series of transient voltage suppressors are

designed to protect military and commercial electronic

equipment from overvoltages caused by lightning, ESD,

EFT, inductive load switching, and EMP. These devices

are constructed using a p-n junction TVS diode in a

hermetically sealed, voidless glass package. The

hermetically sealed package provides high reliability in

harsh environmental conditions. TVS diodes are further

characterized by their high surge capability, low operating

and clamping voltages, and a theoretically instantaneous

response time. This makes them ideal for use as board

level protection for sensitive semiconductor components.

These devices are DESC QPL qualified to MIL-S-19500/

551.

Features

500 Watts peak pulse power (tp = 10/1000µs)

Voidless hermetically sealed glass package

Metallurgically bonded

High surge capacity

Unidirectional

Available in JTX, and JTXV versions per

MIL-S-19500/551

Applications

Aerospace and industrial electronics

Board level protection

Airborne systems

Shipboard systems

Ground systems

Mechanical Characteristics

Hermetically sealed glass package

Absolute Maximum Ratings

Rating

Peak Pulse Power (tp = 10 x 1000µs)

Storage Temperature Range

Steady-State Power Dissipation @ TL = 75°C (3/8")

Symbol

P pk

STG

Value

500

-65 to +175

Units

Watts

°C

Watts

Revision: August 8, 2007

www.semtech.com

1N6464US相似产品对比

	1N6464US	1N6467US	GUS-QS8BLF-002701-GC	1N6468US	1N6465US
描述	Zener Diodes T DAP UNI 500W 15V SM	Zener Diodes T DAP UNI 500W 40.3V	Array/Network Resistor, Bussed, Tantalum Nitride/nickel Chrome, 0.05W, 2700ohm, 100V, 2% +/-Tol, -250,250ppm/Cel, 1915,	Zener Diodes 500 W UNIPOLAR TVS	Zener Diodes 500 W UNIPOLAR TVS
是否Rohs认证	不符合	不符合	符合	不符合	不符合
Reach Compliance Code	unknown	unknown	compliant	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
JESD-609代码	e0	e0	e3	e0	e0
端子数量	2	2	16	2	2
封装形式	LONG FORM	LONG FORM	SMT	LONG FORM	LONG FORM
技术	AVALANCHE	AVALANCHE	TANTALUM NITRIDE/NICKEL CHROME	AVALANCHE	AVALANCHE
端子面层	TIN LEAD	TIN LEAD	Matte Tin (Sn)	TIN LEAD	TIN LEAD
是否无铅	含铅	含铅	-	含铅	含铅
厂商名称	SEMTECH	SEMTECH	-	SEMTECH	SEMTECH
包装说明	O-LELF-N2	O-LELF-N2	-	O-LELF-N2	O-LELF-N2
针数	2	2	-	2	2
Factory Lead Time	17 weeks	17 weeks	-	17 weeks	17 weeks
Is Samacsys	N	N	-	N	N
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY
最小击穿电压	16.4 V	43.7 V	-	54 V	27 V
最大钳位电压	26.5 V	63.5 V	-	78.5 V	41.4 V
配置	SINGLE	SINGLE	-	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	-	SILICON	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	-	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码	O-LELF-N2	O-LELF-N2	-	O-LELF-N2	O-LELF-N2
元件数量	1	1	-	1	1
封装主体材料	GLASS	GLASS	-	GLASS	GLASS
封装形状	ROUND	ROUND	-	ROUND	ROUND
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
极性	UNIDIRECTIONAL	UNIDIRECTIONAL	-	UNIDIRECTIONAL	UNIDIRECTIONAL
最大功率耗散	3 W	3 W	-	3 W	3 W
认证状态	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
最大重复峰值反向电压	15 V	40.3 V	-	51.6 V	24 V
表面贴装	YES	YES	-	YES	YES
端子形式	NO LEAD	NO LEAD	-	NO LEAD	NO LEAD
端子位置	END	END	-	END	END
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	-	1	1

1N6464US

1N6464US在线购买

1N6464US概述

1N6464US规格参数

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