MWI 75-12 E8
MKI 75-12 E8
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
13, 21
1
2
5
6
9
10
19
17
15
3
4
14, 20
11
12
13, 21
1
2
9
10
19
15
I
C25
= 130 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.0 V
3
4
14, 20
7
8
11
12
E72873
See outline drawing for pin arrangement
MWI
MKI
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 15
Ω;
T
VJ
= 125°C
RBSOA; clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
Features
±
20
-o
130
90
150
V
CES
10
500
2.0
2.2
2.5
6.5
1.1
1.1
400
150
60
680
50
9
7.5
5.7
0.58
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 15
Ω;
T
VJ
= 125°C
SCSOA; non-repetitive
T
C
= 25°C
e
4.5
s
a
h
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
u
V
V
A
A
A
µs
W
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
µC
0.25 K/W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 3 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 75 A
V
GE
= ±15 V; R
G
= 15
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 100 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
p
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
t
• NPT
3
IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
• MWI
- AC drives
- power supplies with power factor
correction
• MKI
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
20070912a
© 2007 IXYS All rights reserved
1-4
MWI 75-12 E8
MKI 75-12 E8
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
150
100
A
A
Equivalent Circuits for Simulation
Conduction
Symbol
V
F
I
RM
t
rr
R
thJC
Module
Conditions
I
F
= 75 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 75 A; di
F
/dt = -750 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
(per diode)
Characteristic Values
min.
typ. max.
2.2
1.6
79
220
2.6
V
V
A
ns
0.41 K/W
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.95 V; R
0
= 17 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.2 V; R
0
= 6 m
Ω
Thermal Response
u
V~
Nm
mΩ
mm
mm
K/W
g
T
VJ
T
JM
T
stg
V
ISOL
M
d
Symbol
R
pin-chip
d
S
d
A
R
thCH
Weight
operating
-40...+125
+150
-40...+125
°C
°C
°C
Mounting torque (M5)
Conditions
-o
3-6
1.8
0.01
300
I
ISOL
≤
1 mA; 50/60 Hz
2500
Creepage distance on surface
Strike distance in air
with heatsink compound
a
s
e
10
10
Characteristic Values
min.
typ. max.
IXYS reserves the right to change limits, test conditions and dimensions.
p
pins 5, 6, 7, 8 and 17 for MWI only
20070912a
© 2007 IXYS All rights reserved
h
t
IGBT (typ.)
C
th1
= 0.294 J/K; R
th1
= 0.184 K/W
C
th2
= 1.789 J/K; R
th2
= 0.064 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.227 J/K; R
th1
= 0.321 K/W
C
th2
= 1.328 J/K; R
th2
= 0.089 K/W
Symbol
Conditions
Maximum Ratings
Dimensions in mm (1 mm = 0.0394")
2-4
MWI 75-12 E8
MKI 75-12 E8
250
A
I
C
V
GE
= 17 V
13 V
15 V
250
A
I
C
200
T
VJ
= 125°C
V
GE
= 17 V
15 V
13 V
200
T
VJ
= 25°C
150
100
50
0
0
1
2
3
V
CE
11 V
150
100
9V
11 V
9V
50
0
4
V
5
0
1
2
3
V
CE
4
V
5
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
200
A
V
CE
= 20 V
250
A
I
F
200
150
100
50
160
I
C
-o
T
VJ
= 25°C
120
80
T
VJ
= 125°C
u
T
VJ
= 125°C
T
VJ
= 25°C
e
40
0
5
6
7
8
V
GE
s
0
t
0
1
2
V
F
9
V
10
3
V
Fig. 3 Typ. transfer characteristics
a
120
A
I
RM
h
Fig. 4 Typ. forward characteristics
of free wheeling diode
300
ns
t
rr
T
VJ
= 125°C
V
R
= 600 V
I
F
= 100 A
15
V
12
V
GE
p
V
CE
= 600 V
I
C
= 100 A
80
9
6
40
3
200 t
rr
100
I
RM
0
0
100
200
300
400
Q
G
0
500
nC
600
0
200
400
600
-di/dt
MWI75-12E8
0
800
A/μs
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics
of free wheeling diode
20070912a
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
3-4
MWI 75-12 E8
MKI 75-12 E8
40
mJ
E
on
td(on)
200
ns
150
t
16
mJ
E
off
12
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 15
Ω
T
VJ
= 125°C
800
ns
t
d(off)
600
t
400
30
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 15
Ω
T
VJ
= 125°C
tr
20
100
8
10
Eon
50
4
E
off
t
f
0
40
80
120
I
C
A
200
0
0
40
80
I
C
0
0
120
A
160
0
160
Fig. 7 Typ. turn on energy and switching
times versus collector current
30
mJ
E
on
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 75 A
T
VJ
= 125°C
td(on)
Fig. 8 Typ. turn off energy and switching
times versus collector current
20
mJ
t
E
off
15
300
ns
200
t
20
40
60
R
G
single pulse
2000
t
d(off)
ns
1500
t
20
-o
10
u
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 75 A
T
VJ
= 125°C
1000
E
off
500
t
f
10
Eon
tr
100
5
e
0
0
20
40
60
R
G
s
80
Ω
0
0
0
80
Ω
0
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
160
140
I
CM
A
120
a
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
Z
thJC
IGBT
h
diode
100
80
60
40
20
0
0
200
400
600
800 1000 1200 1400
V
V
CE
R
G
= 15
Ω
T
VJ
= 125°C
p
0.01
0.001
0.0001
0.0001
MWI75-12E8
0.001
0.01
0.1
t
1
s 10
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
4-4
stm32/stm8
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