MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA45H4452M
440-520MHz 45W 12.5V MOBILE RADIO
BLOCK DIAGRAM
DESCRIPTION
The RA45H4452M is a 45-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>45W,
η
T
>35% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA45H4452M-E01
RA45H4452M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA45H4452M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA45H4452M
RATING
17
6
100
55
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=440-520MHz,
Z
G
=Z
L
=50Ω
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
440
45
TYP
MAX
520
UNIT
MHz
W
%
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
35
-25
3:1
1
dBc
—
mA
—
—
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<55W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=45W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA45H4452M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA45H4452M
2
nd
, 3
rd
HARMONICS versus FREQUENCY
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
80
OUTPUT POWER P
out
(W)
70
INPUT VSWR
ρ
in
(-)
60
50
40
30
20
10
0
430
ρ
in
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
P
out
80
70
TOTAL EFFICIENCY
η
T
(%)
60
50
40
30
20
10
0
530
HARMONICS (dBc)
-20
-30
-40
-50
-60
-70
430
2
nd
η
T
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
3
rd
450
470
490
510
FREQUENCY f(MHz)
450
470
490
510
FREQUENCY f(MHz)
530
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
10
0
-15
-10
-5
0
5
I
DD
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
24
20
16
12
I
DD
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
24
20
16
12
8
4
0
20
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
40
30
20
10
0
-15 -10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
8
4
0
10
15
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
Gp
P
out
24
20
16
12
I
DD
f=490MHz,
V
DD
=12.5V,
V
GG
=5V
24
20
16
12
I
DD
f=520MHz,
V
DD
=12.5V,
V
GG
=5V
40
30
20
10
0
-15 -10
-5
0
5
40
30
20
10
0
-15 -10
-5
0
5
8
4
0
8
4
0
10
15
20
10
15
20
INPUT POWER P
in
(dBm)
INPUT POWER P
in
(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
90
80
70
60
50
40
30
20
10
0
2
f=440MHz,
V
GG
=5V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
90
80
70
60
50
40
30
20
10
0
2
f=470MHz,
V
GG
=5V,
P
in
=50mW
I
DD
20
18
16
14
12
10
8
6
4
2
0
16
P
out
I
DD
20
18
16
14
12
10
8
6
4
2
0
16
OUTPUT POWER P
out
(W)
4
6
8
10 12 14
DRAIN VOLTAGE V
DD
(V)
DRAIN CURRENT I
DD
(A)
OUTPUT POWER P
out
(W)
4
6
8
10 12 14
DRAIN VOLTAGE V
DD
(V)
RA45H4452M
MITSUBISHI ELECTRIC
3/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA45H4452M
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
90
80
70
60
50
40
30
20
10
0
2
f=490MHz,
V
GG
=5V,
P
in
=50mW
DRAIN CURRENT I
DD
(A)
P
out
I
DD
I
DD
4
6
8
10 12 14
DRAIN VOLTAGE V
DD
(V)
16
2
4
6
8
10 12 14
DRAIN VOLTAGE V
DD
(V)
16
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
f=440MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
DRAIN CURRENT I
DD
(A)
f=470MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
16
14
12
I
DD
16
14
12
I
DD
10
8
6
4
2
0
10
8
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
f=490MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
DRAIN CURRENT I
DD
(A)
f=520MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
16
14
12
I
DD
16
14
12
I
DD
10
8
6
4
2
0
10
8
6
4
2
0
RA45H4452M
MITSUBISHI ELECTRIC
4/9
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
P
out
20
18
16
14
12
10
8
6
4
2
0
100
90
80
70
60
50
40
30
20
10
0
f=520MHz,
V
GG
=5V,
P
in
=50mW
20
18
16
14
12
10
8
6
4
2
0
OUTPUT POWER P
out
(W)
OUTPUT POWER P
out
(W)
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA45H4452M
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
60.0 ±0.5
51.5 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(50.4)
2.3 ±0.3
4.0 ±0.3
(9.88)
RA45H4452M
MITSUBISHI ELECTRIC
5/9
17.0 ±0.5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
23 Dec 2002
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
