FII 30-12E
NPT
3
IGBT
Phaseleg Topology
in ISOPLUS i4-PAC
TM
3
5
4
I
C25
= 33 A
= 1200 V
V
CES
V
CE(sat) typ
= 2.4 V
1
1
2
5
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C90
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
T
C
= 25°C
T
C
= 90°C
V
GE
=
±
15 V; R
G
= 68
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= 900V; V
GE
=
±
15 V; R
G
= 68
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
±
20
33
20
40
V
CES
10
150
µs
W
V
V
A
A
A
Features
• NPT
3
IGBT
- positive temperature coefficient of
saturation voltage for easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• HiPerFRED
TM
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
Symbol
Conditions
(T
VJ
Characteristic Values
= 25°C, unless otherwise specified)
min.
typ. max.
2.4
2.8
4.5
0.2
200
205
105
320
175
4.1
1.5
1.2
100
1.2
2.9
6.5
0.2
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
0.8 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 20 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.6 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 20 A
V
GE
= ±15 V; R
G
= 68
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 20 A
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-4
0549
FII 30-12E
Diodes
Symbol
I
F25
I
F90
Conditions
T
C
= 25°C
T
C
= 90°C
Maximum Ratings
25
15
A
A
Equivalent Circuits for Simulation
Conduction
Symbol
V
F
I
RM
t
rr
R
thJC
R
thCH
Conditions
I
F
= 20 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 15 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
(per diode)
with heat transfer paste
Characteristic Values
min.
typ. max.
2.5
1.9
16
130
3.6
3.0
V
V
A
ns
2.3 K/W
K/W
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.09 V; R
0
= 85 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 32 m
Ω
Thermal Response
Component
Symbol
T
VJ
T
stg
V
ISOL
F
C
Symbol
C
p
d
S
,d
A
d
S
,d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
mounting force with clip
Conditions
coupling capacity between shorted pins
and mounting tab in the case
pin - pin
pin - backside metal
1.7
5.5
9
Conditions
Maximum Ratings
-55...+150
-55...+125
2500
20...120
°C
°C
V~
N
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
min.
typ. max.
40
pF
mm
mm
g
IGBT (typ.)
C
th1
= 0.049 J/K; R
th1
= 0.15 K/W
C
th2
= 0.133 J/K; R
th2
= 0.65 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.021 J/K; R
th1
= 0.63 K/W
C
th2
= 0.052 J/K; R
th2
= 1.67 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
2-4
0549
FII 30-12E
80
V
GE
= 17 V
A
I
C
60
T
VJ
= 25°C
15 V
60
A
50
I
C
40
T
VJ
= 125°C
V
GE
= 17 V
15 V
13 V
13 V
40
11 V
30
20
11 V
20
9V
9V
10
0
0
0
1
2
3
4
V
CE
5
V
6
0
1
2
3
4
V
CE
5
V
6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
80
V
CE
= 20 V
50
40
A
30
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
A
I
C
60
T
VJ
= 25°C
I
F
40
20
10
0
20
0
0
5
10
V
GE
15
V
20
0
1
2
V
F
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
15
V
40
V
CE
= 600 V
I
C
= 20 A
200
ns
A
I
RM
12
V
GE
30
t
rr
150
t
rr
9
20
6
3
0
0
20
40
60
80
nC
100
Q
G
T
VJ
= 125°C
V
R
= 600 V
I
F
= 15 A
I
RM
FII30-12E
100
10
50
0
0
200
400
600
-di/dt
0
800
A/µs
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
0549
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
3-4
FII 30-12E
20
mJ
t
d(on)
t
r
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 68
Ω
T
VJ
= 125°C
250
ns
200
t
150
100
50
E
on
0
4.0
3.5
mJ
E
off
3.0
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 68
Ω
T
VJ
= 125°C
400
t
d(off)
ns
350
300
250
200
150
100
E
off
t
f
0
10
20
I
C
30
A
50
0
40
t
16
E
on
12
8
4
0
0
2.5
2.0
1.5
1.0
0.5
0.0
10
20
I
C
30
A
40
Fig. 7 Typ. turn on energy and switching
times versus collector current
10
mJ
E
on
Fig. 8 Typ. turn off energy and switching
times versus collector current
2.5
mJ
E
off
2.0
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 20 A
T
VJ
= 125°C
1250
ns
1000
t
d(off)
t
750
500
250
t
f
0
8
6
4
2
0
0
50
100
150
R
G
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 20 A
T
VJ
= 125°C
1.5
1.0
0.5
0.0
0
E
off
200
Ω
250
50
100
150
R
G
200
Ω
250
Fig. 9 Typ. turn on energy vs gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
10
K/W
Z
thJC
1
IGBT
diode
80
A
I
CM
60
R
G
= 68
Ω
T
VJ
= 125°C
0.1
0.01
40
20
single pulse
0.001
0.0001
0.00001 0.0001 0.001
FII30-12E
0
0
200
400
600
800 1000 1200
V
CE
V
0.01
0.1
t
1
s 10
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
4-4
0549
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
