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MAS3795

产品描述Silicon epitaxial planar type
产品类别分立半导体    二极管   
文件大小68KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
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MAS3795概述

Silicon epitaxial planar type

MAS3795规格参数

参数名称属性值
零件包装代码DFP
包装说明R-PDSO-F3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型MIXER DIODE
频带L BAND
JESD-30 代码R-PDSO-F3
元件数量1
端子数量3
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
认证状态Not Qualified
表面贴装YES
技术SCHOTTKY
端子形式FLAT
端子位置DUAL
Base Number Matches1

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Schottky Barrier Diodes (SBD)
MAS3795
Silicon epitaxial planar type
Unit: mm
For high-speed switching circuits
Features
High-density mounting is possible
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
Low forward voltage V
F
optimum for low voltage rectification
V
F
= <
0.3 V (at I
F
=
1 mA)
SSS-Mini type 3-pin package
0.33
+0.05
–0.02
3
0.10
+0.05
–0.02
(0.40) (0.40)
0.80
±0.05
1.20
±0.05
0.15 min.
0.23
+0.05
–0.02
1
2
0 to 0.01
0.52
±0.03
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
F
I
FM
T
j
T
stg
Rating
30
30
30
150
125
−55
to
+125
Unit
V
V
mA
mA
°C
°C
1: Anode
2: N.C.
3: Cathode
SSSMini3-F1 Package
Marking Symbol: M2
Internal Connection
3
1
2
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
Detection efficiency
C
t
t
rr
η
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
1.5
1.0
65
Conditions
Min
Typ
Max
30
0.3
1.0
pF
ns
%
Unit
µA
V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.15 max.
0.15 min.
0.80
±0.05
1.20
±0.05
Publication date: June 2002
SKH00117AED
1

 
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