Operating Temperature Range .......................... -40NC to +85NC
Storage Temperature Range............................ -65NC to +160NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
8 TDFN
Junction-to-Ambient Thermal Resistance (q
JA
) ...........41°C/W
Junction-to-Case Thermal Resistance (q
JC
)..................8°C/W
10 TDFN
Junction-to-Ambient Thermal Resistance (q
JA
) ...........41°C/W
Junction-to-Case Thermal Resistance (q
JC
)..................9°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
CC
= 3.0V to 5.5V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are at V
CC
= 5V, and T
A
= +25NC.) (Note 2)
PARAMETER
DC CHARACTERISTICS
Power Supply Range
Continuous Current Through
Switch
V
CC
I
A
V
CC
P
4.7V
Supply Current
I
CC
V
CC
> 4.7V
Analog Signal Range
On-Resistance
On-Resistance Flatness
A, A1, A2 Off-Leakage Current
COM, B, B1, B2 Off-Leakage
Current
V
COM,
V
A_
, V
B_
R
ON
DR
ON
I
A_(OFF)
Switch open or closed
I
COM
or I
B_
=
Q25mA,
V
A_
=
Q25V
-25V < V
A_
< +25V, I
COM
or I
B_
=
Q25mA
V
A_
= +25V, V
COM
or V
B_
= 0V, Figure 1
-30
-10
-10
V
EN_
= V
CC
V
EN_
= V
CC
/2
V
EN_
= V
CC
V
EN_
= V
CC
/2
-25
8
58
+30
+10
nA
+10
3.0
-25
4.1
4.1
2.5
2.5
5.5
+25
10
10
6
6
+25
20
V
I
mI
nA
mA
V
mA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
COM
or V
B_
= 15V, V
A_
= 0V, Figure 1
I
COM(OFF)
, (MAX14764)
I
B_(OFF)
V
B_
= 15V, V
A_
= 0V, Figure 1 (MAX14760/
MAX14762)
2
MAX14760/MAX14762/MAX14764
Above- and Below-the-Rails
Low-Leakage Analog Switches
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 3.0V to 5.5V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are at V
CC
= 5V, and T
A
= +25NC.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
V
A_
=
Q25V,
B/COM is unconnected,
Figure 1 (MAX14760/MAX14762)
V
A_
=
Q25V,
B/COM is unconnected,
Figure 1 (MAX14764)
V
CC
= 3.0V
Input-Voltage Logic-Low
V
IL
V
CC
= 3.6V
V
CC
= 4.5V
V
CC
= 5.5V
V
CC
= 3.0V
Input-Voltage Logic-High
V
IH
V
CC
= 3.6V
V
CC
= 4.5V
V
CC
= 5.5V
Input Current
AC CHARACTERISTICS
Power-On Time
t
PWRON
C
VP
= C
VN
= 100nF (Note 3)
V
A_
=
Q10V,
R
L
= 10kI, Figure 2
(MAX14760/MAX14762)
V
A_
=
Q10V,
R
L
= 10kI, Figure 2
(MAX14764)
(Figure 2)
V
A_
= 1V
RMS
, R
L
= 10kI,
Figure 3 (MAX14764)
V
A_
= 1V
RMS
, f = 100kHz, R
L
= 50I,
C
L
= 15pF, Figure 4
R
S
= R
L
= 50I, f = 100kHz, V
COM
= 1V
RMS
,
Figure 5 (MAX14764)
R
S
= 50I, R
L
= 1kI , V
A_
= 1V
P-P
, Figure 6
R
S
= R
L
= 1kI, f = 20Hz to 20kHz
V
A_
= GND, C
L
= 1nF, Figure 7
At A, A1, A2, B, B1, B2, and COM pins
50
100
1.04
110
740
-77
-92
115
0.005
19
32
+154
24
Human Body Model
Q2
200
1.6
400
ms
Fs
ms
Fs
Fs
dB
dB
MHz
%
pC
pF
NC
NC
kV
I
L
1.7
1.9
2.0
2.1
-1
+1
FA
V
MIN
-10
-30
TYP
MAX
+10
nA
+30
UNITS
On-Leakage Current
I
ON
DIGITAL LOGIC
0.7
0.7
0.8
0.8
V
Enable Turn-On Time
t
ON
Enable Turn-Off Time
Break-Before-Make Interval
Off-Isolation
Crosstalk
-3dB Bandwidth
Total Harmonic Distortion
Charge Injection
Input Capacitance
THERMAL PROTECTION
Thermal Shutdown Temperature
Shutdown Temperature Hysteresis
ESD PROTECTION
All Pins
t
OFF
t
BBM
V
ISO
V
CT
BW
THD+N
Q
C
IN
t
HYST
t
SHUT
Note 2:
All devices are 100% production tested at T
A
= +25°C. Specifications over operating temperature range are guaranteed
by design.
Note 3:
The power-on time is defined as the settling time for the charge pump’s output to reach steady-state value within 1%.
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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