SMD Schottky Barrier Diode
CDBF0540-HF
I
o
= 500 mA
V
R
= 40 Volts
RoHS Device
Halogen Free
1005/SOD-323F
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
Mechanical data
-Case: 1005/SOD-323F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BN
0.040(1.00) Typ.
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.012 (0.30) Typ.
-Mounting position: Any
-Weight: 0.006 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Peak reverse voltage
Reverse voltage
Average forward rectified current
Forward current,surge peak
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RM
V
R
I
O
40
40
500
5.5
-40
+125
+125
V
V
mA
A
O
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
I
FSM
T
STG
T
j
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
I
F
= 0.5 A
I
F
= 1 A
I
F
= 0.5 A
I
F
= 1 A
V
R
= 20V
V
R
= 40V
V
R
= 20V
V
R
= 40V
Conditions
@Ta = 25 C
@Ta = 25 C
@Ta = 100 C
@Ta = 100 C
O
O
O
O
Symbol Min Typ Max Unit
V
F
0.51
0.64
0.46
0.62
0.01
0.02
2
5
170
22
V
Reverse current
@Ta = 25
O
C
@Ta = 25 C
O
@Ta = 100
O
C
@Ta = 100 C
O
I
R
mA
Capacitance between terminals
Reverse recovery time
f = 1 MHz, and 0 VDC reverse voltage
I
F
= I
R
= 10mA, Irr x I
R
, R
L
= 100ohm
C
T
Trr
pF
ns
REV:A
QW-G1090
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBF0540-HF)
Fig. 1 - Forward characteristics
1000
Fig. 2 - Reverse characteristics
10m
125 C
1m
Forward current (mA )
Reverse current ( A )
100
100u
10u
75 C
10
25 C
1
1u
100n
10n
-25 C
0.1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1n
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Capacitance between terminals(pF)
120
Fig. 4 - Current derating curve
120
Average forward current ( % )
f=1MHz
Ta = 25 C
100
100
80
80
60
60
40
40
20
20
0
0
5
10
15
20
0
0
25
50
75
100
125
150
Reverse voltage (V)
Ambient temperature ( C )
REV:A
QW-G1090
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
Polarity
W
C
P
A
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.55 ± 0.10
0.061
±
0.004
B
2.65 ± 0.10
0.104
±
0.004
C
1.05 ± 0.10
0.041
±
0.004
d
1.55 ± 0.05
0.061
±
0.002
D
178 ± 1
7.008
±
0.04
D
1
60.0 MIN.
2.362 MIN.
D
2
13.0 ± 0.20
0.512
±
0.008
1005
(SOD-323F)
(mm)
(inch)
SYMBOL
E
1.75 ± 0.10
0.069
±
0.004
F
3.50 ± 0.05
0.138
±
0.002
P
4.00 ± 0.10
0.157
±
0.004
P
0
4.00 ± 0.10
0.157
±
0.004
P
1
2.00 ± 0.05
0.079
±
0.004
T
0.23 ± 0.05
0.009
±
0.002
W
8.00 ± 0.20
0.315
±
0.008
W
1
13.5 MAX.
0.531 MAX.
1005
(SOD-323F)
(mm)
(inch)
REV:A
QW-G1090
Page 3
Comchip Technology CO., LTD.
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