TS1220
Sensitive 12 A SCRs
Datasheet - production data
A
K
Applications
A
G
A
Capacitive ignition circuit for motorcycle
engine
DC brush motor drive for power tool or
kitchen appliance
Gas ignitor circuit
Regulator driver for battery charger
K
A
G
DPAK
K
A
G
A
IPAK
Description
Thanks to highly sensitive triggering levels, the
12 A SCR series is suitable to fit all modes of
control, found in applications such as overvoltage
crowbar protection, motor control circuits in
power tools and kitchen aids, inrush current
limiting circuits, capacitive discharge ignition and
voltage regulation circuits.
Available in through-hole or surface-mount
packages, they provide an optimized
performance in a limited space.
K
TO-220AB
Table 1: Device summary
Order code
TS1220-600B
V
DRM
/V
RRM
I
GT
0.2 mA
600 V
0.2 mA
0.2 mA
0.2 mA
Package
DPAK
DPAK
IPAK
TO-220AB
A
G
Features
On-state RMS current, I
T(RMS)
12 A
Repetitive peak off-state voltage, V
DRM
/V
RRM
600 V
Triggering gate current, I
GT
200 µA
ECOPACK
®
2 compliant component
TS1220-600B-TR
TS1220-600H
TS1220-600T
August 2016
DocID027645 Rev 2
1/14
www.st.com
This is information on a product in full production.
Characteristics
TS1220
1
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Characteristics
Table 2: Absolute ratings (limiting values)
Parameter
On-state RMS current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak
on-state current
I
2
t value for fusing
Critical rate of rise of on-state current I
G
= 2 x I
GT
,
t
r
≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 60 Hz
t
p
= 20 µs
T
c
= 105 °C
T
c
= 105 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
Value
12
8
115
110
60
50
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A
2
s
A/µs
A
W
°C
Table 3: Sensitive electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= 12 V, R
L
= 140 Ω
V
D
= V
DRM,
R
L
= 3.3 kΩ, R
GK
= 220 Ω
I
RG
= 10 µA
I
T
= 50 mA, R
GK
= 1 kΩ
I
G
= 1 mA
,
R
GK
= 1 kΩ
V
D
= 67% V
DRM,
R
GK
= 220 Ω
I
TM
= 24 A t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
, R
GK
= 1 kΩ
T
j
=125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Table 4: Thermal resistance
Symbol
R
th(j-c)
Junction to case (DC)
S = 0.5 cm
2(1)
R
th(j-a)
Junction to ambient (DC)
Parameter
DPAK, IPAK, TO-220AB
DPAK
IPAK
TO-220AB
Notes:
(1)
S
Test conditions
MAX.
MAX.
T
j
= 125 °C
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
200
0.8
0.1
8
5
6
5
1.6
0.85
30
5
2
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Value
1.3
70
100
60
Unit
°C/W
°C/W
= Copper surface under tab
2/14
DocID027645 Rev 2
TS1220
Characteristics
1.1
Characteristics (curves)
Figure 2: Average and DC on-state current versus case
temperature
Figure 1: Maximum average power dissipation versus
average on-state current
Figure 3: Average and DC on-state current versus
ambient temperature (DPAK)
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration
Figure 5: Relative variation of thermal impedance
junction to ambient versus pulse duration
Figure 6: Relative variation of gate trigger and holding
current versus junction temperature
DocID027645 Rev 2
3/14
Characteristics
Figure 7: Relative variation of holding current versus
gate-cathode resistance (typical values)
TS1220
Figure 8: Relative variation of dV/dt immunity versus
gate-cathode resistance (typical values)
Figure 9: Relative variation of dV/dt immunity current
versus gate-cathode capacitance (typical values)
Figure 10: Surge peak on-state current versus number
of cycles
Figure 11: Non-repetitive surge peak on-state current
and corresponding values versus sinusoidal pulse width
Figure 12: On-state characteristics (maximum values)
4/14
DocID027645 Rev 2
TS1220
Characteristics
Figure 13: Thermal resistance junction to ambient versus copper surface under tab (DPAK)
DocID027645 Rev 2
5/14
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