VDI 75-12P1 VII 75-12P1
VID 75-12P1 VIO 75-12P1
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
IJK10
I
C25
= 92 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.7 V
VII
OP9
VID
IK10
VDI
AC1
L9
X13
X15
SV18
L9
NTC
T16
PS18
A1
S18
LMN9
E2
GH10
NTC
L9
X15
F1
X15
NTC
X16
AC1
X16
B3
Pin arangement see outlines
K10
VX18
X16
IK10
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
± 20
V
de
92
62
A
A
100
V
CES
10
A
µs
W
379
2.7
3.0
3.2
6.5
3.7
12.5
200
100
70
500
70
9.1
6.7
3.3
0.66
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.33 K/W
K/W
ne
4.5
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
w
r
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
;
fo
No
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 60 A
V
GE
= 15/0 V; R
G
= 22
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
t
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
si
V
gn
Features
Advantages
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Recommended replacement:
Please contact your local
sales office
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1-4
0646
VDI 75-12P1 VII 75-12P1
VID 75-12P1 VIO 75-12P1
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 60 A;
T
VJ
= 25°C
T
VJ
= 125°C
Maximum Ratings
103
65
A
A
Characteristic Values
min.
typ. max.
2.28
1.67
41
200
1.32
2.6
V
V
A
ns
0.66 K/W
K/W
I
F
= 60 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
B3
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
mounting torque (M4)
Max. allowable acceleration
Conditions
Conditions
Maximum Ratings
-40...+150
-40...+150
Conditions
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
r
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
ne
11.2
11.2
1.5 - 2.0
14 - 18
50
w
24
VID
Characteristic Values
min. typ. max.
mm
mm
g
VDI
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-4
0646
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
No
t
fo
de
°C
°C
3000
V~
Nm
lb.in.
m/s
2
si
gn
VIO
Characteristic Values
min. typ. max.
VDI 75-12P1 VII 75-12P1
VID 75-12P1 VIO 75-12P1
120
A
T
J
= 25°C
V
GE
=17 V
15 V
13 V
11 V
100
I
C
120
A
T
J
= 125°C
100
I
C
80
60
40
V
GE
=17 V
15 V
13 V
11 V
80
60
40
9V
9V
20
0
0,0
81T120
20
0
81T120
0,5
1,0
1,5
2,0
2,5
V
CE
3,0
V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
V
CE
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
120
A
V
CE
= 20 V
T
J
= 25°C
180
A
150
I
F
120
90
60
30
100
I
C
gn
si
1,0
1,5
2,0
2,5
t
rr
I
RM
T
J
= 125°C
T
J
= 25°C
80
60
40
20
0
5
6
7
8
9
10
V
GE
81T120
w
de
0
DWLP55-12
ne
11
V
0,5
3,0
V
3,5
V
F
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
A
I
RM
r
V
V
GE
fo
20
300
ns
t
rr
15
10
No
t
V
CE
= 600 V
I
C
= 50 A
80
200
40
5
T
J
= 125°C
V
R
= 600 V
I
F
= 50 A
100
0
0
50
100
150
200
Q
G
81T120
0
0
200
400
600
800
A/μs
-di/dt
81T120
0
250
nC
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
0646
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
3-4
VDI 75-12P1 VII 75-12P1
VID 75-12P1 VIO 75-12P1
24
mJ
E
on
120
ns
90
t
d(on)
t
60
t
r
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
Ω
T
J
= 125°C
81T120
12
mJ
600
E
off
ns
500
t
d(off)
400 t
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
Ω
T
J
= 125°C
10
E
off
18
8
6
4
12
300
200
t
f
81T120
6
E
on
30
2
0
100
0
0
0
20
40
60
I
C
0
0
20
40
60
80
I
C
80
100
A
100 A
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
240
20
mJ
E
on
E
on
si
R
G
diode
IGBT
single pulse
15
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
J
= 125°C
10
8
t
E
off
gn
0,001
0,01
t
t
d(on)
ns
180
mJ
V
CE
= 600 V
t
d(off)
E
off
1500
ns
1200
t
900
600
300
V
GE
= ±15 V
I
C
= 50 A
T
J
= 125°C
6
10
t
r
120
5
60
w
de
4
2
0
81T120
0
81T120
R
G
Fig. 9 Typ. turn on energy and switching
ne
0 10 20 30 40 50 60 70 80 90 100
Ω
0
t
f
0 10 20 30 40 50 60 70 80 90 100
Ω
0
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0,1
Z
thJC
0,01
0,001
0,0001
120
A
100
I
CM
80
60
40
20
0
0
200
400
No
R
G
= 22
Ω
T
J
= 125°C
V
CEK
< V
CES
t
fo
r
81T120
600
800 1000 1200
V
V
CE
0,00001
0,00001 0,0001
VID...75-12P1
0,1
s
1
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
0646
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
4-4
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