InGaAs-PIN/Preamp
Receiver
FEATURES
• Data rate up to 156Mb/s
• High Responsivity: 0.85A/W at 1,310nm
• High temperature operation up to 85°C
FRM3Z121KT/LT
KT
APPLICATIONS
• Medium bit rate standard medium haul
optical transmission system at STM-1 (OC-3)
DESCRIPTION
These PIN preamplifiers use an InGaAs PIN with a GaAs IC preamplifier.
Package style is a hermetically sealed, epoxyless coaxial package
with a multimode fiber pigtail.
LT
Edition 1.0
March 1999
1
FRM3Z121KT/LT
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Parameter
Storage Temperature
Operating Case Temperature
IC Supply Voltage
PD Supply Voltage
PD Reverse Current
Maximum Input Power
Symbol
Tstg
Top
Vss
Vr
Ir
Po max
InGaAs-PIN/Preamp
Receiver
Ratings
-40 to +85
-40 to +85
-7 to +0
0 to +20
500
0
Unit
°C
°C
V
V
µA
dBm
OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40° to +85°C, Vss=-5.2V, Vr=GND level and
λ=1,310/1,550nm
unless otherwise specified)
Parameter
Responsivity
Transimpedance
Bandwidth
Symbol
R
Zt
BW
Test Conditions
λ=1,310nm
AC, RL=50Ω,
Pin <-20dBm
AC-Coupled, RL=50Ω,
-3dBm from 1MHz
156Mb/s NRZ, 2
23
-1
P.R.B.S., B.E.R.=10
-10
Ta=25°C
Ta=-40 to +85°C
Maximum Input Optical Power
Power Supply Current
Recommended Supply
PD Voltage
Optical Return Loss
Equivalent Input Current Density
Pmax
Iss
Vss
Vr
ORL
in
Note (1)
-
-
-
-
avg. within 110MHz
Min.
0.8
8.0
110
Limits
Typ.
0.85
10.5
-
Max.
-
-
-
Unit
A/W
KΩ
MHz
Sensitivity
Pr
-
-
-7
-
-5.46
0
30
-
-39
-38.5
-
-
-5.2
-
-
1.12
-38
-37.5
-
40
-4.94
20
-
1.4
dBm
dBm
dBm
mA
V
V
dB
pA/ Hz
Note: (1) Maximum Input Optical Power, Pmax is defined as the optical power when the variation of F.W.H.M. of the output waveform is less than 10%
compared with that of the low input; optical power level.
(2) No data is accompanied with each device.
(3) Optical characteristics are specified on the condition that single mode fiber is used as the optical source for testing.
2
InGaAs-PIN/Preamp
Receiver
Fig. 1 Normarized Output Voltage
as a function of Peak Photo Current
Ta = 25°C
Vss=-5.2V
VR=5V
CW condition
RL=∞
λ=1,310nm
FRM3Z121KT/LT
Fig. 2 Relative Frequency Response
Delta Output Voltage,
∆Vout
(V)
Relative Response (dB)
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
50
Photo Current (µA)
+3
Pin=-10dBm
0
-3
-6
-9
Ta = 25°C
Pin=-35dBm
Vss=-5.2V
VR=5V
AC-Coupled
RL=50Ω
λ=1,310nm/1,550nm
1
10
100
1000
100
Frequency, f(MHz)
Fig. 3 Equivalent Input Noise Current Density
Fig. 4 Eye diagram with a 1,310nm,156Mbps NRZ,
2
23
-1 PRBS incident signal at Tc = 25°C
50mV/Div
1ns/Div
10
Equivalent input noise current density
in (pA/√Hz)
Ta = 25°C
Vss=-5.2V
AC-Coupled
RC=50Ω
5
Pin=-7dBm
with Bessel filter
1
10
100
Frequency, f (MHz)
1000
3
FRM3Z121KT/LT
InGaAs-PIN/Preamp
Receiver
Fig. 5 Bit Error Rate at 1,310nm and a 156Mbps NRZ
2
23
-1 PRBS for various case temperture
10
-3
Ta=25°C
10
-4
85°C
10
-5
Bit Error Rate
10
-6
-40°C
10
-7
10
-8
10
-9
10
-10
10
-11
10
-12
-45
λ=1,310nm
156Mb/s
NRZ
Vss=-5.2V
VR=GND
-40
-35
-30
Received Optical Power (dBm)
“KT” PACKAGE
GND
UNIT: mm
2-C1.5
VR
VSS
14.0±0.15
17.0±0.2
8.4±0.2
Ø0.9±0.1
4-Ø0.45±0.05
OUT
Ø6.0 MAX
P.C.D. 2.0±0.2
P.C.D. 4.0±0.2
2.5±0.1
4.4 MAX
10.0 MIN
32.0 MAX
Ø7.2 MAX
GND
VR
2.0±0.1
4.2±0.2
1000 MIN
VSS
8.4±0.2
OUT
“LT” PACKAGE
GND
VR
VSS
VR
UNIT: mm
VSS
14.0±0.15
17.0±0.2
Ø0.9
P.C.D. 2.0±0.2
4-Ø0.45±0.05
Ø6.0 MAX
P.C.D. 4.0±0.2
OUT
7.6 MAX
1.0±0.1
2.5±0.1
Ø7.2 MAX
OUT
GND
10.0 MIN
32.0 MAX
1000 MIN
4
InGaAs-PIN/Preamp
Receiver
FRM3Z121KT/LT
For further information please contact:
CAUTION
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.fcsi.fujitsu.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0199M200
5
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