InGaAs-APD/Preamp
Receiver
FEATURES
• Data rate up to 2.5Gb/s
• -32dBm typ. sensitivity
• 30µm active area APD
chip with GaAs pre-
amplifier
• Small co-axial package
with single mode fiber
FRM5W231KT/LT
KT
APPLICATIONS
• High bit rate long haul optical transmission systems operating
at 2.5Gb/s
LT
DESCRIPTION
These APD preamplifiers use an InGaAs APD chip with
GaAs IC preamplifier. The KT package is designed for a horizontal
PC board mount. The LT package is secured by a vertical flange.
Each package is connected with single mode fiber by Nd: YAG
welding. The detector preamplifier is DC coupled and has a
low electrical output when the APD is illuminated.
Edition 1.0
March 1999
1
InGaAs-APD/Preamp
Receiver
Fig. 1 Output Characteristics
Tc = 25°C
Vss=-5.2V
0.6 AC-Coupled
RL=50Ω
0.5 100Mb/s
Duty 50%
Mark density 50%
0.4
0.3
0.2
0.1
0
0.7
FRM5W231KT/LT
Fig. 2 Relative Frequency Response
Output Voltage Peak to Peak, Vpp(mV)
Relative Response (3dB/div)
M=15
M=10
M=5
Tc = 25°C
Vss=-5.2V
AC-Coupled
RL=50Ω
Pin=-30dBm
λ
= 1,310/1,550nm
0
1.5
3.0
Zt ~ 600Ω
Frequency, f (GHz)
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig.4 Eye Diagram with a 1,550nm,
2.5Gb/s NRZ, 2
23
-1 PRBS incident signal
Input optical wave form with Bessel filter
Average Photocurrent, Ip.ave (mA)
Fig.3 Equivalent Input Noise Current Density
Equivalent Input Noise Current Density,
in (pA/sqr. Hz)
10
5
Tc = 25°C
Vss=-5.2V
AC-Coupled
RL=50Ω
0
0
1.0
Frequency, f (GHz)
2.0
Equivalent output wave form at
Pin=-32dBm, Tc=25°C, M=optimum
100ps/div
Edition 1.0
March 1999
3
InGaAs-APD/Preamp
Receiver
For further information please contact:
FRM5W231KT/LT
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.fcsi.fujitsu.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FME, QDD
Fujitsu Microelectronics Europe GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Global Business Division
Global Sales Support Department
Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku,
Shinjuku-ku, Tokyo, 163-0721, Japan
TEL: +81-3-5322-3356
FAX: +81-3-5322-3398
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0200M200
Edition 1.0
March 1999
5
嵌入式系统
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