InGaAs-PIN/Preamp
Receiver
FEATURES
• Small Form Factor Package(GW): 9 pins coplanar
• Integrated Design Optimizes Performance at
Bit Rates up to 12.5Gb/s
• High Sensitivity: -19dBm (typ.)
• Electrical Differential Output
• Wide Bandwidth: 11GHz (typ.)
FRM5J141GW
APPLICATIONS
This PIN with HBT preamplifier is intended to function as an optical
receiver at 1,310nm or 1,530-1,620nm in SONET, SDH, DWDM or other
optical fiber systems operating up to 12.5Gb/s. The typical transimpedance (Zt)
value of 1,300Ω optimizes the total bandwidth for 10Gb/s application. The detector
preamplifier is DC coupled and has an electrical differential output.
DESCRIPTION
The FRM5J141GW incorporates a high bandwidth InGaAs PIN photo diode, a GaAs
HBT IC amplifier in a hermetically sealed Small Form Factor package (SFF). The PIN is
processed with modern MOVPE techniques resulting in a reliable performance over a wide
range of operating conditions. The lens coupling system and the single mode fiber are
assembled using Nd YAG welding.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C)
Parameter
Storage Temperature
Operating Temperature
Supply Voltage
PIN Reverse Voltage
PIN Reverse Current
Symbol
Tstg
Top
Vss
VR
IR(peak)
Ratings
-40 to +85
-5 to +75
-6 to 0
0 to 20
4
Unit
°C
°C
V
V
mA
Edition 1.3
January 2003
1
FRM5J141GW
InGaAs-PIN/Preamp
Receiver
OPTICAL & ELECTRICAL CHARACTERISTICS
(Tc=25°C,
λ=1,550nm,
Vss=-5.2V, VR=5V, unless otherwise specified)
Parameter
PIN Responsivity
AC Transimpedance
Output Common Voltage
Maximum Output
Voltage Swing
Bandwidth
Lower Cut-off Frequency
Peaking
Symbol
R13
R15
R16
Zt
Vout
Vclip
BW
-3dB from 750MHz, Pin=-16dBm
fcl
dpk
130MHz to BW, Pin=-16dBm
1GHz to 6GHz, Pin=-16dBm
Group Delay Deviation
GD
1GHz to 8GHz, Pin=-16dBm
Output Return Loss
S22
130MHz to 6GHz
130MHz to 8GHz
25°C, Rext=13dB
10Gb/s, NRZ,
PRBS=2
31
-1, 25°C, Rext=8.2dB
25°C, Rext=6.0dB
B.E.R.=10
-12
70°C, Rext=13dB
10Gb/s, NRZ, Rext=13dB
PRBS=2
31
-1, Rext=8.2dB
B.E.R.=10
-12
Rext=6.0dB
λ
= 1,550nm
λ
= 1,310nm
Iss
Vss
VR
-
-
-
-
-
-
-
-
-
-
-0.5
-
-
27
27
-
-5.46
4.75
30
12
10
-19.0
-17.0
-14.0
-18.0
0
1
2
-
-
110
-5.20
5.0
60
-
-
-18.0
-
-
-17.0
-
-
-
-
-
130
-4.94
12
dB
-
-
-
40
0.5
15
100
1.5
40
ps
p-p
kHz
dB
Test Conditions
λ
= 1,310nm
λ
= 1,550nm
λ
= 1,620nm
f = 750MHz, Single-end
-
Saturated Output Voltage
Min.
0.85
0.85
-
900
-
400
9.0
Limits
Typ.
0.95
1.00
0.85
1300
-400
600
11.0
Max.
-
-
-
-
-
800
-
Unit
A/W
Ω
mV
mV
GHz
Minimum Sensitivity
Pr
dBm
Maximum Overload
Po
ORL
dBm
Optical Return Loss
Preamp Supply Current
Preamp Supply Voltage
PIN Supply Voltage
dB
mA
V
V
Note: All the parameters are measured with 50Ω DC-coupled and 0V output offset.
2
FRM5J141GW
“GW” PACKAGE
8 - P0.8=6.4
2 - 0.2
7 - 0.4
InGaAs-PIN/Preamp
Receiver
UNIT: mm
Lead Detail (x10)
Bending Radius 0.3
0.35 0.25
4.0
2 - R1.1
Ø4.1
Ø0.9
0.6
(1.0)
1
17.0
13.0
9.0
9
5.5
6.7
0.4
PIN # Symbol
1
VPD
VPreamp
GND
OUT
GND
OUT
GND
OFFSET
NC
2.0
0.1
Function
PD BIAS (+)
Preamp BIAS
CASE GROUND
OUTPUT (-)
CASE GROUND
OUTPUT (+)
CASE GROUND
DC OFFSET CONTROL
NC
1400 MIN.
5.0
2
3
4
5
6
7
8
9
2.6
28.0 MAX.
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
2.3
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0302M200
4
2.6
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