MAC8DG, MAC8MG,
MAC8NG
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
http://onsemi.com
•
•
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On-State Current Rating of 8.0 Amperes RMS at 100°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dv/dt
−
250 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating di/dt
−
6.5 A/ms minimum at 125°C
These Devices are Pb−Free and are RoHS Compliant*
TRIACS
8 AMPERES RMS
400 thru 800 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Characteristic
Peak Repetitive Off−State Voltage
,
(Note 1)
(T
J
=
−40
to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC8DG
MAC8MG
MAC8NG
On-State RMS Current,
(Full Cycle Sine Wave, 60 Hz, T
C
= 100°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave,
60 Hz, T
J
= 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Average Gate Power
(t = 8.3 ms, T
C
= 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
400
600
800
I
T(RMS)
I
TSM
8.0
80
A
A
Value
Unit
V
1
2
TO−220AB
CASE 221A−09
STYLE 4
x
A
Y
WW
G
MAC8xG
AYWW
3
= D, M, or N
= Assembly Location (Optional)*
= Year
= Work Week
= Pb−Free Package
I
2
t
P
GM
P
G(AV)
T
J
T
stg
26
16
0.35
−40
to +125
−40
to +150
A
2
s
W
W
°C
°C
* The Assembly Location code (A) is optional. In
cases where the Assembly Location is stamped
on the package the assembly code may be blank.
PIN ASSIGNMENT
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
MAC8DG
MAC8MG
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MAC8NG
©
Semiconductor Components Industries, LLC, 2012
August, 2012
−
Rev. 7
1
Publication Order Number:
MAC8D/D
MAC8DG, MAC8MG, MAC8NG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Value
2.2
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On-State Voltage (Note 2), (I
TM
=
±
11 A Peak)
Gate Trigger Current (Continuous DC) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Holding Current, (V
D
= 12 V, Gate Open, Initiating Current =
±150
mA)
Latching Current (V
D
= 24 V, I
G
= 35 mA), MT2(+), G(+); MT2(−), G(−)
MT2(+), G(−)
Gate Trigger Voltage (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Non−Trigger Voltage (V
D
= 12 V, R
L
= 100
W,
T
J
= 125°C)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current See Figure 10.(V
D
= 400 V, I
TM
= 4.4 A,
Commutating dv/dt = 18 V/ms,Gate Open, T
J
= 125°C, f = 250 Hz, No Snubber)
C
L
= 10
mF
L
L
= 40 mH
Critical Rate of Rise of Off-State Voltage (V
D
= Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 125°C)
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
(di/dt)
c
6.5
−
−
A/ms
V
TM
I
GT
−
5.0
5.0
5.0
−
−
−
0.5
0.5
0.5
0.2
1.2
13
16
18
20
20
30
0.69
0.77
0.72
−
1.6
35
35
35
40
50
80
1.5
1.5
1.5
V
−
mA
mA
V
V
mA
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
−
−
−
−
0.01
2.0
mA
Symbol
Min
Typ
Max
Unit
I
H
I
L
V
GT
V
GD
dv/dt
250
−
−
V/ms
http://onsemi.com
2
MAC8DG, MAC8MG, MAC8NG
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2
−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
MAC8DG, MAC8MG, MAC8NG
125
PAV, AVERAGE POWER (WATTS)
TC, CASE TEMPERATURE (
°
C)
120
α
= 120, 90, 60, 30°
115
α
= 180°
110
DC
105
12
DC
10
180°
8
6
4
90°
2
0
α
= 30°
60°
120°
100
0
1
3
4
5
6
I
T(RMS)
, RMS ON‐STATE CURRENT (AMP)
2
7
8
0
1
2
3
4
5
6
I
T(RMS)
, ON‐STATE CURRENT (AMP)
7
8
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
100
1
TYPICAL AT
T
J
= 25°C
MAXIMUM @ T
J
= 125°C
0.1
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
10
0.01
0.1
1
10
100
t, TIME (ms)
1000
1 · 10
4
Figure 4. Thermal Response
MAXIMUM @ T
J
= 25°C
1
40
35
I H, HOLD CURRENT (mA)
30
MT2 POSITIVE
25
20
15
MT2 NEGATIVE
10
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
T
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
5
5
- 50
- 30
- 10
10
30
50
70
90
T
J
, JUNCTION TEMPERATURE (°C)
110
130
Figure 3. On-State Characteristics
Figure 5. Hold Current Variation
http://onsemi.com
4
MAC8DG, MAC8MG, MAC8NG
100
Q2
Q3
Q1
VGT, GATE TRIGGER VOLTAGE (VOLT)
IGT, GATE TRIGGER CURRENT (mA)
1
0.95
0.9
0.85
0.8
075
0.7
0.65
0.6
0.55
0.5
0.45
0.4
- 50
Q2
Q3
10
Q1
1
- 50
- 30
- 10
10
50
90
30
70
T
J
, JUNCTION TEMPERATURE (°C)
110
130
- 30
- 10
10
50
70
30
90
T
J
, JUNCTION TEMPERATURE (°C)
110
130
Figure 6. Gate Trigger Current Variation
dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/
μ
s)
Figure 7. Gate Trigger Voltage Variation
5000
4.5K
4K
3.5K
3K
2.5K
2K
1.5K
1K
500
0
1
MT2 POSITIVE
10
100
R
G
, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
1000
MT2 NEGATIVE
100
(dv/dt) c , CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/
μ
s)
T
J
= 125°C
10
100°C
75°C
t
w
V
DRM
f=
1
2 t
w
6f I
TM
1000
(di/dt)
c
=
1
10
15
20
25
30
35
40
45
50
55
60
(di/dt)
c
, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 8. Critical Rate of Rise of Off-State
Voltage (Exponential)
Figure 9. Critical Rate of Rise of
Commutating Voltage
L
L
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
MEASURE
I
1N4007
-
+
MT2
1N914 51
W
G
MT1
CHARGE
200 V
NON‐POLAR
C
L
Note: Component values are for verification of rated (di/dt)
c
. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
http://onsemi.com
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
