VS-ST380C Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 960 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case E-PUK (TO-200AB)
• Low profile hockey PUK
current-carrying capability
E-PUK (TO-200AB)
RoHS
COMPLIANT
to
increase
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
960 A
400 V, 600 V
1.60 V
100 mA
-40 °C to +125 °C
E-PUK (TO-200AB)
Single SCR
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
960
55
1900
25
15 000
15 700
1130
1030
400 to 600
100
-40 to 125
UNITS
A
°C
A
°C
A
kA
2
s
V
µs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
600
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
AT T
J
= T
J
V
MAXIMUM mA
500
700
50
VS-ST380C..C
Revision: 27-Sep-17
Document Number: 94410
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST380C Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
960 (440)
55 (75)
1900
15 000
15 700
12 600
Sinusoidal half wave,
initial T
J
= T
J
maximum
13 200
1130
1030
800
725
11 300
0.85
0.88
0.25
0.24
1.60
600
1000
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 3000 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
,
t
p
= 500 μs
VALUES
1000
1.0
µs
100
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/µs
mA
Revision: 27-Sep-17
Document Number: 94410
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST380C Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, t
p
5 ms
T
J
= -40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
100
50
2.5
1.8
1.1
10
VALUES
TYP.
MAX.
UNITS
10.0
2.0
3.0
20
5.0
-
200
-
-
3.0
-
W
A
V
mA
V
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.09
0.04
0.02
0.01
9800
(1000)
83
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
thC-hs
E-PUK (TO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.010
0.012
0.015
0.022
0.036
0.011
0.012
0.015
0.022
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
0.007
0.012
0.016
0.023
0.036
DOUBLE SIDE
0.007
0.013
0.017
0.023
0.037
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94410
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST380C Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
400
800
1200
30°
60°
90°
120°
180°
DC
1600
2000
Conduction Period
Maximum Allowable Heats T
ink emperature (°C)
130
120
110
100
90
80
70
60
50
40
0
100 200
S 380C..C S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.09 K/ W
S 380C..C S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.04 K/ W
Conduction Angle
30°
60°
90°
120°
180°
300
400
500 600
700
Average On-state Current (A)
Average On-s
tate Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
Fig. 4 - Current Ratings Characteristics
120
110
100
90
80
70
60
50
40
30
20
0
200
30°
S 380C..C S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.09 K/ W
Maximum Average On-s
tate Power Loss (W)
130
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
200
400
600
800 1000 1200 1400
Average On-state Current (A)
S 380C..C S
T
eries
T = 125°C
J
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
60°
90°
120°
180°
400
600
800
DC
1000 1200
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
Fig. 5 - On-State Power Loss Characteristics
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
200
30°
S 380C..C S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.04 K/ W
2800
2400
2000
1600
RMSLimit
1200
800
400
0
0
400
800
1200
1600
2000
Average On-state Current (A)
Conduction Period
DC
180°
120°
90°
60°
30°
Conduction Angle
60°
90°
120°
180°
S 380C..C S
T
eries
T = 125°C
J
400 600
800 1000 1200 1400
Average On-s
tate Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94410
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST380C Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave On-state Current (A)
ine
15000
Peak Half S Wave On-state Current (A)
ine
14000
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
13000
Initial T = 125°C
J
@60 Hz 0.0083 s
12000
@50 Hz 0.0100 s
11000
10000
9000
8000
T
eries
7000 S 380C..C S
6000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration. Control
14000
Of Conduc tion May Not Be Maintained.
Initial T = 125°C
13000
J
No Voltage R
eapplied
12000
Rated V
RRM
R
eapplied
11000
10000
9000
8000
7000
S 380C..C S
T
eries
0.1
Pulse T
rain Duration (s)
1
6000
0.01
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Ins
tantaneous On-state Current (A)
T = 25°C
J
T
J
= 125°C
1000
S 380C..C S
T
eries
100
0.5
1
1.5
2
2.5
3
3.5
Ins
tantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJ-hs
(K/ W)
0.1
S 380C..C S
T
eries
0.01
S
teady S
tate Value
R
thJ-hs
= 0.09 K/ W
(S
ingle S
ide Cooled)
R
thJ-hs
= 0.04 K/ W
(Double S Cooled)
ide
(DC Operation)
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Revision: 27-Sep-17
Document Number: 94410
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
