THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP70040E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 100 V, V
GS
= 0 V, T
J
= 175 °C
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
DS
= 50 V, V
GS
= 10 V, I
D
= 20 A
V
GS
= 0 V, V
DS
= 50 V, f = 1 MHz
-
-
-
-
-
-
0.6
-
-
-
-
5100
2025
165
76
23
17
3.3
15
22
55
15
-
-
-
120
-
-
6.6
30
40
100
30
ns
nC
pF
I
D(on)
R
DS(on)
g
fs
V
DS
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 7.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
100
2.5
-
-
-
-
120
-
-
-
-
-
-
-
-
-
-
0.0032
0.0035
82
-
4
± 250
1
150
5
-
0.0040
0.0046
-
V
nA
μA
mA
A
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Pulsed Current
Forward Voltage
a
I
SM
V
SD
I
F
= 10 A, V
GS
= 0 V
-
-
-
0.8
480
1.5
A
V
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-0736-Rev. A, 13-Apr-15
Document Number: 62996
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP70040E
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
150
200
V
GS
= 10 V thru 7 V
V
GS
= 6 V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
150
120
Vishay Siliconix
90
100
60
T
C
= 125°C
30
T
C
= 25°C
50
V
GS
= 5 V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
T
C
= - 55°C
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
200
T
C
= - 55
°C
160
g
fs
- Transconductance (S)
T
C
= 25
°C
0.008
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.006
120
T
C
= 125
°C
80
V
GS
= 7.5 V
0.004
V
GS
= 10 V
0.002
40
0
0
14
28
42
56
70
I
D
- Drain Current (A)
0
0
30
60
I
D
- Drain Current (A)
90
120
Transconductance
8900
10
On-Resistance vs. Drain Current
I
D
= 20 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 50 V
6675
C - Capacitance (pF)
C
iss
4450
C
oss
2225
C
rss
0
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
100
0
0
V
DS
= 25 V
6
V
DS
= 80 V
4
2
20
40
60
Q
g
- Total
Gate
Charge (nC)
80
Capacitance
S13-0736-Rev. A, 13-Apr-15
Gate Charge
Document Number: 62996
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP70040E
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.1
R
DS(on)
- On-Resistance (Normalized)
I
D
= 20 A
1.8
I
S
-
Source
Current (A)
10
T
J
= 150
°C
100
Vishay Siliconix
1.5
V
GS
= 10 V
1
1.2
0.1
T
J
= 25
°C
0.01
0.9
0.6
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.020
Source Drain Diode Forward Voltage
4
I
D
= 250 μA
0.016
R
DS(on)
- On-Resistance (Ω)
3.4
0.012
V
GS(th)
(V)
T
J
= 150
°C
T
J
= 25
°C
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
2.8
0.008
0.004
2.2
0.000
1.6
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
125
I
D
= 10 mA
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
120
115
110
105
100
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S13-0736-Rev. A, 13-Apr-15
Document Number: 62996
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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