40 Amp Alternistor (High Commutation) Triacs
Teccor
®
brand Thyristors
Qxx40xx Series
Description
®
40 Amp bi-directional solid state switch series is designed
for AC switching and phase control applications such as
motor speed and temperature modulation controls, lighting
controls, and static switching relays.
Alternistor type devices only operate in quadrants I, II, & III
and are used in circuits requiring high dv/dt capability.
Features & Benefits
• RoHS Compliant
• Glass – passivated
junctions
Agency Approval
Agency
®
• Surge capability up to
400A
• Electrically isolated
K & J -Packages are UL
recognized for 2500Vrms
• Voltage capability up to
1000V
Agency File Number
K & J Packages: E71639
Applications
Excellent for AC switching and phase control applications
such as heating, lighting, and motor speed controls.
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q1)
Value
40
400 to 1000
50 to 100
Unit
A
V
mA
Typical applications are AC solid-state switches, industrial
power tools, exercise equipment, white goods and
commercial appliances.
Alternistor Triacs (no snubber required) are used in
applications with extremely inductive loads requiring
highest commutation performance.
Internally constructed isolated packages are offered for
ease of heat sinking with highest isolation voltage.
Schematic Symbol
MT2
G
MT1
Qxx40xx Series
147
Revised: June 24, 2011 04:57 PM
©2011 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
40 Amp Alternistor (High Commutation) Triacs
Teccor
®
brand Thyristors
Absolute Maximum Ratings — Alternistor Triac
(3 Quadrants)
Symbol
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GTM
P
G(AV)
T
stg
T
J
Note: xx = voltage, x = package
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current
(full cycle, T
J
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
(I
G
= 2 x I
GT
, tr
≤
100 ns)
Peak gate trigger current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
f = 120 Hz
t
p
≤
10 μs I
GT
≤
I
GTM
Qxx40x7
Qxx40xH6
f = 50 Hz
f = 60 Hz
T
C
= 75°C
t = 20 ms
t = 16.7 ms
t
p
= 8.3 ms
T
J
= 125°C
T
J
= 125°C
T
J
= 125°C
Value
40
335
400
664
150
4
0.8
-40 to 150
-40 to 125
Unit
A
A
A
2
s
A/μs
A
W
°C
°C
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Alternistor Triac
(3 Quadrants)
Symbol
I
GT
V
GT
V
GD
I
H
Test Conditions
V
D
= 12V R
L
= 60
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
T
J
= 125°C
I
T
= 400mA
400V
dv/dt
V
D
= V
DRM
Gate Open T
J
= 125°C
V
D
= V
DRM
Gate Open T
J
= 100°C
(dv/dt)c
t
gt
(di/dt)c = 21.6 A/μs T
J
= 125°C
I
G
= 2 x I
GT
PW = 15µs I
T
= 56.6A(pk)
600V
800V
1000V
MIN.
TYP
.
30
MIN.
Quadrant
I – II – III
I – II – III
I – II – III
MAX.
MAX.
MIN.
MAX.
80
600
500
475
Value
Qxx40xH6
80
1.3
Qxx40K5
50
1.3
0.2
75
500
475
400
--
20
5
100
700
625
575
500
50
V/µs
µs
V/μs
Qxx40x7
100
2.0
Unit
mA
V
V
mA
Static Characteristics
Symbol
V
TM
I
DRM
I
RRM
I
TM
= 56.6A t
p
= 380 µs
Test Conditions
T
J
= 25°C
T
J
= 25°C
V
D
= V
DRM
/ V
RRM
T
J
= 125°C
T
J
= 100°C
400 –1000V
400 – 800V
1000V
MAX.
MAX.
MAX.
MAX.
Value
1.8
20
5
5
Unit
V
μA
mA
mA
Thermal Resistances
Symbol
Parameter
Qxx40KH6
Qxx40K5
Qxx40K7
Qxx40JH6
Qxx40J7
Value
0.97
°C/W
0.95
Unit
R
θ(J-C)
Note: xx = voltage
Junction to case (AC)
Qxx40xx Series
148
Revised: June 24, 2011 04:57 PM
©2011 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
40 Amp Alternistor (High Commutation) Triacs
Teccor
®
brand Thyristors
Figure 1: Definition of Quadrants
ALL POLARITIES ARE REFERENCED TO MT1
MT2
(
-
)
Figure 2: Normalized DC Gate Trigger Current for
All Quadrants vs. Junction Temperature
4.0
MT2 POSITIVE
(Positive Half Cycle)
+
MT2
Ratio of I
GT
/ I
GT
(T
J
= 25°C)
I
GT
GATE
MT1
(+)
I
GT
GATE
MT1
3.0
2.0
I
GT
-
(
-
)
REF
MT2
I
GT
GATE
MT1
REF
QII QI
QIII QIV
(+)
REF
MT2
I
GT
GATE
MT1
REF
+
I
GT
1.0
0.0
-40
-15
10
35
60
85
MT2 NEGATIVE
(Negative Half Cycle)
-
110 +125
Junction Temperature -- (°C)
NOTE: Alternistors will not operate in QIV
Note: Alternistors will not operate in QIV
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
4.0
Figure 4: Normalized DC Gate Trigger Voltage for
All Quadrants vs. Junction Temperature
2.0
3.0
Ratio of V
GT
/ V
GT
(T
J
= 25°C)
Ratio of I
IH
/ I
IH
(T
J
= 25°C)
1.5
2.0
1.0
1.0
0.5
0.0
-40
-15
10
35
60
85
110
+ 125
0.0
-40-
15
10
35
60
85
110 +125
Junction Temperature - °C
Junction Temperature - °C
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
45
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current
130
Average On-State Power Dissipation
[P
D (AV)
] - Watts
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
Max Allowable Case Temperature
(T
C
) - ºC
40
120
110
100
90
80
70
60
50
0
5
10
15
20
25
30
35
40
45
50
RMS On-State Current [I
T(RMS)
] - AMPS
RMS On-State Current [I
T(RMS)
] - AMPS
Qxx40xx Series
149
Revised: June 24, 2011 04:57 PM
©2011 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
40 Amp Alternistor (High Commutation) Triacs
Teccor
®
brand Thyristors
Figure 7: On-State Current vs. On-State Voltage (Typical)
90
Positive or Negative Instantaneous
On-State Current (i
T
) - AMPS
80
T
C
= 25ºC
70
60
50
40
30
20
10
0
0.6
0.8
1.0
1.2
1.4
1.6
Positive or Negative Instantaneous On-State Voltage (v
T
) - Volts
Figure 8: Surge Peak On-State Current vs. Number of Cycles
1000
Peak Surge (Non-repetitive) On-State Current
(I
TSM
) – Amps
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State [I
T(RMS)
]: Max Rated Value at
Specific Case Temperature
Notes:
1) Gate control may be lost during and
immediately following surge current interval.
2) Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
100
10
1
1
10
100
1000
Surge Current Duration – Full Cycles
Note: xx = voltage
Qxx40xx Series
150
Revised: June 24, 2011 04:57 PM
©2011 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
40 Amp Alternistor (High Commutation) Triacs
Teccor
®
brand Thyristors
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp)
(T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Time (min to max) (t
s
)
Pb – Free assembly
T
P
Temperature
t
P
Ramp-up
150°C
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260
+0/-5
T
L
T
S(max)
t
L
Preheat
Ramp-do
Ramp-down
T
S(min)
t
S
time to peak temperature
25
Time
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
°C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
Physical Specifications
Terminal Finish
Body Material
Lead Material
100% Matte Tin-plated.
UL recognized epoxy meeting flammability
classification 94V-0.
Copper Alloy
Environmental Specifications
Test
AC Blocking
Temperature Cycling
Temperature/
Humidity
High Temp Storage
Low-Temp Storage
Thermal Shock
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
1008 hours; -40°C
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwell-
time at each temperature; 10 sec (max)
transfer time between temperature
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
MIL-STD-750 Method 2031
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the Thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect against
component damage.
Autoclave
Resistance to
Solder Heat
Solderability
Lead Bend
Qxx40xx Series
151
Revised: June 24, 2011 04:57 PM
©2011 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
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