a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
t
≤
5s
Steady State
SYMBOL
R
thJA
TYPICAL
440
540
MAXIMUM
530
650
UNIT
°C/W
S14-1601-Rev. B, 11-Aug-14
Document Number: 67995
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1013CX
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
SYMBOL
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
TEST CONDITIONS
V
GS
= 0, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
≥
5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -0.4 A
V
GS
= -2.5 V, I
D
= -0.2 A
V
GS
= -1.8 V, I
D
= -0.1 A
V
DS
= -10 V, I
D
= 0.4 A
MIN.
-20
-
-
-0.4
-
-
-
-
-1.5
-
-
-
-
-
TYP.
-
-12
1.8
-
-
-
-
-
-
0.630
0.865
1.200
1
45
15
10
1.65
1
0.2
0.26
12
9
10
10
8
1
8
9
5
-
-0.8
16
8
11
5
MAX.
-
-
-
-1
± 30
±1
-1
-10
-
0.760
1.040
1.500
-
-
-
-
2.50
2
-
-
24
18
20
20
16
2
16
18
10
-1.5
-1.2
24
16
-
-
UNIT
V
mV/°C
V
μA
A
Ω
S
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -0.4 A
V
DS
= -0 V, V
GS
= -2.5 V, I
D
= -0.4
f = 1 MHz
-
-
-
-
-
-
2.4
-
-
-
-
-
-
-
-
-
pF
nC
Ω
V
DD
= -10 V, R
L
= 33.3
Ω
I
D
≅
-0.3 A, V
GEN
= -4.5 V, R
g
= 1
Ω
ns
V
DD
= -10 V, R
L
= 33.3
Ω
I
D
≅
-0.3 A, V
GEN
= -8 V, R
g
= 1
Ω
A
V
ns
nC
ns
I
S
= -0.3 A
-
-
-
-
-
I
F
= -0.3 A, dI/dt = 100 A/μs
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-1601-Rev. B, 11-Aug-14
Document Number: 67995
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1013CX
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.010
Vishay Siliconix
10
-4
0.008
I
GSS
-
Gate
Current (mA)
I
GSS
-
Gate
Current (A)
10
-5
T
J
= 150
°C
0.006
10
-6
0.004
T
J
= 25
°C
0.002
10
-7
T
J
= 25
°C
0.000
0
3
6
9
12
V
GS
-
Gate-Source
Voltage (V)
10
-8
0
3
6
9
12
V
GS
-
Gate-to-Source
Voltage (V)
15
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
1.5
V
GS
= 5 V thru 3 V
1.2
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 2.5 V
0.8
0.6
0.9
V
GS
= 2 V
0.6
0.4
0.3
V
GS
= 1.5 V
0.2
T
C
= 25 °C
T
C
= 125 °C
0
0
0.5
1
1.5
V
DS
- Drain-to-Source Voltage (V)
2
0
0
0.4
0.8
1.2
T
C
= - 55 °C
1.6
2
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
2
90
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1.5
V
GS
= 1.8 V
72
54
C
iss
36
1
V
GS
= 2.5 V
0.5
V
GS
= 4.5 V
18
C
rss
C
oss
0
0
0.3
0.6
0.9
1.2
1.5
I
D
- Drain Current (A)
0
0
5
10
15
V
DS
- Drain-to-Source Voltage (V)
20
On-Resistance vs. Drain Current
S14-1601-Rev. B, 11-Aug-14
Capacitance
Document Number: 67995
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1013CX
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 0.4 A
6
V
DS
= 5 V
1.5
I
D
= 0.35 A
V
GS
-
Gate-to-Source
Voltage (V)
V
GS
= 2.5 V
Vishay Siliconix
1.3
V
GS
= 4.5 V
1.1
4
V
DS
= 10 V
V
DS
= 16 V
2
0.9
0
0
0.45
0.9
1.35
1.8
Q
g
- Total
Gate
Charge (nC)
0.7
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
10
1.2
I
D
= 0.35 A
R
DS(on)
- On-Resistance (Ω)
1.0
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25
°C
T
J
= 125 °C
0.8
T
J
= 25 °C
0.6
0.1
0.0
0.4
0.3
0.6
0.9
1.2
V
SD
-
Source-to-Drain
Voltage (V)
1.5
1
2
3
4
5
6
V
GS
-
Gate-to-Source
Voltage (V)
7
8
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.7
10
0.6
8
0.5
I
D
= 250 μA
Power (W)
125
150
V
GS(th)
(V)
6
4
0.4
2
0.3
- 50
- 25
0
25
50
75
100
0
0.001
0.01
T
J
- Temperature (°C)
0.1
Time (s)
1
10
Threshold Voltage
S14-1601-Rev. B, 11-Aug-14
Single Pulse Power, Junction-to-Ambient
Document Number: 67995
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?67995.
S14-1601-Rev. B, 11-Aug-14
Document Number: 67995
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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