StrongIRFET™
IRFB7740PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
75V
6.0m
7.3m
87A
G
S
max
I
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
G
S
D
TO-220AB
IRFB7740PbF
D
Drain
S
Source
Base part number
IRFB7740PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB7740PbF
(
RDS(on), Drain-to -Source On Resistance m
)
30
100
ID = 52A
25
80
20
ID , Drain Current (A)
20
60
15
TJ = 125°C
10
40
5
TJ = 25°C
4
8
12
16
20
0
0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
TC , CaseTemperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Rating
IRFB7740PbF
Units
A
W
W/°C
V
°C
Parameter
Max.
Continuous Drain Current, V
GS
@ 10V
87
Continuous Drain Current, V
GS
@ 10V
62
Pulsed Drain Current
275
Maximum Power Dissipation
143
Linear Derating Factor
0.95
V
GS
Gate-to-Source Voltage
± 20
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
160
E
AS (Thermally limited)
Single Pulse Avalanche Energy
241
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig. 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
1.05
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
Junction-to-Ambient
R
JA
–––
62
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
mJ
A
mJ
Units
°C/W
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
0.05 ––– V/°C Reference to 25°C, I
D
= 1mA
6.0
7.3 m V
GS
= 10V, I
D
= 52A
7.1
–––
V
GS
= 6.0V, I
D
= 26A
–––
3.7
V V
DS
= V
GS
, I
D
= 100µA
–––
1.0
V
DS
=75 V, V
GS
= 0V
µA
––– 150
V
DS
=75V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
2.0
–––
Notes:
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.117mH, R
G
= 50, I
AS
= 52A, V
GS
=10V.
I
SD
52A, di/dt
503A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 22A, V
GS
=10V.
2
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March 5, 2015
IRFB7740PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
167
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
81
21
27
54
12
60
55
45
4650
370
240
330
425
Typ.
–––
–––
–––
10
41
51
46
62
2.3
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
=52A
122
I
D
= 52A
–––
V
DS
= 38V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 38V
–––
I
D
= 52A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
87
A
275
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 60V
V
GS
= 0V, VDS = 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 52A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
=52A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 52A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
IRFB7740PbF
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
2.6
Fig 4.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VDS = 25V
ID, Drain-to-Source Current (A)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
60µs PULSE WIDTH
100
ID = 52A
VGS = 10V
10
TJ = 175°C
TJ = 25°C
1
0.1
2.0
3.0
4.0
5.0
6.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
10000
Fig 6.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 52A
VDS= 60V
VDS= 38V
VDS= 15V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
10 20 30 40 50 60 70 80 90 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
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March 5, 2015
1000
IRFB7740PbF
1msec
10msec
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
TJ = 175°C
10
TJ = 25°C
1
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
DC
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
95
Fig 10.
Maximum Safe Operating Area
0.8
Id = 1.0mA
0.6
90
Energy (µJ)
85
0.4
80
0.2
75
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
0.0
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
(
RDS(on), Drain-to -Source On Resistance
m
)
Fig 12.
Typical C
oss
Stored Energy
20.0
VGS = 5.5V
VGS = 6.0V
16.0
VGS = 7.0V
VGS = 8.0V
VGS = 10V
12.0
8.0
4.0
0
50
100
150
200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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March 5, 2015
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