VS-ST333SP Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 330 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
TO-118 (TO- 209AE)
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
330 A
400 V, 800 V
1.96 V
11 000 A
11 520 A
200 mA
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
J
T
C
Package
Circuit configuration
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
-40 °C to +125 °C
75 °C
TO-118 (TO-209AE)
Single SCR
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
330
75
518
11 000
11 520
605
550
400 to 800
15
-40 to +125
kA
2
s
V
μs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
50
VS-ST333S
Revision: 28-Aug-17
Document Number: 94377
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333SP Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
R
Voltage before turn-on V
D
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
840
650
430
140
50
V
DRM
50
50
10/0.47
600
450
230
60
1280
1280
1090
490
50
V
DRM
-
1040
910
730
250
5430
2150
1080
400
50
V
DRM
-
4350
1560
720
190
V
A/μs
75
10/0.47
°C
/μF
A
75
50
10/0.47
75
50
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state
current at case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 63 °C case temperature
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
330
75
518
11 000
11 520
9250
Sinusoidal half wave,
initial T
J
= T
J
maximum
9700
605
550
430
390
6050
1.96
0.91
0.92
0.58
0.58
600
1000
m
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
I
TM
= 1810 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Maximum turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum,
I
TM
= 550 A, commutating dI/dt = 40 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt = 200 V/μs
VALUES
1000
1.0
μs
15
UNITS
A/μs
Revision: 28-Aug-17
Document Number: 94377
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333SP Series
www.vishay.com
Vishay Semiconductors
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/μs
mA
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage
current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.10
0.03
48.5
(425)
535
UNITS
°C
K/W
N·m
(lbf · in)
g
TO-118 (TO-209AE)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.011
0.013
0.017
0.025
0.041
RECTANGULAR CONDUCTION
0.008
0.014
0.018
0.026
0.042
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 28-Aug-17
Document Number: 94377
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333SP Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Cas T
e emperature (°C)
130
120
110
100
90
80
70
60
0
100
200
300
400
30°
Conduc tion Period
Maximum Allowable Case T
emperature (°C)
130
120
110
Conduc tion Angle
S 333SS
T
eries
R
thJC
(DC) = 0.10 K/ W
S 333SS
T
eries
R
thJC
(DC) = 0.10 K/ W
100
90
80
70
0
50
100
150
200
250
300
350
Average On-state Current (A)
30°
60°
90°
120°
180°
60°
90°
120°
180°
DC
500
600
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
500
hS
R
t
06
0.
03
0.
450
400
350
300
250
200
180°
120°
90°
60°
30°
RMS Limit
K/
W
0.
12
K/
W
0.1
6K
/
0.2
W
K/
W
0.
08
W
K/
A
W
K/
=
/W
1K
0.0
ta
el
-D
R
0.3
K/ W
Conduction Angle
150
100
50
0
0
50
100
150
200
250
300
0.5
K/ W
S 333S S
T
eries
T = 125°C
J
350
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-s
tate Power Loss (W)
700
600
500
400
DC
180°
120°
90°
60°
30°
0.
03
0.
06
K/
W
K/
W
R
A
S
th
=
01
0.
W
K/
ta
el
-D
0.1
2
K/
W
R
300 RMSLimit
Conduc tion Period
0.2
K/ W
200
100
0
0
100
200
300
400
500
S 333S S
T
eries
T = 125°C
J
0.3
K/ W
0. 5 K
/
W
600
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 28-Aug-17
Document Number: 94377
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333SP Series
www.vishay.com
Vishay Semiconductors
T
rans
ient T
hermal Impedance Z
thJC
(K/ W)
1
S
teady S
tate Value
R
thJC
= 0.10 K/ W
(DC Operation)
0.1
Peak Half S Wave On-state Current (A)
ine
10000
9000
8000
7000
6000
5000
4000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
0.01
S 333S S
T
eries
S 333SS
T
eries
10
100
0.001
0.001
0.01
0.1
1
10
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
S
quare Wave Pulse Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Peak Half S Wave On-state Current (A)
ine
11000
Maximum R
everse R
ecovery Charge - Qrr (µC)
Maximum Non R
epetitive S
urge Current
Vers Pulse T
us
rain Duration. Control
10000 Of Conduction May Not Be Maintained.
Initial T = 125°C
J
9000
No Voltage Reapplied
Rated V
RRM
Reapplied
8000
7000
6000
5000
S 333S S
T
eries
320
300
280
260
240
220
200
180
160
140
120
100
80
10
20 30
I
T
M
= 500 A
300 A
200 A
100 A
50 A
S 333S S
T
eries
T = 125 °C
J
4000
0.01
0.1
Pulse T
rain Duration (s)
1
40 50
60 70 80
90 100
R
ate Of Fall Of On-state Current - di/ dt (A/ µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovered Charge Characteristics
Maximum R
everse R
ecovery Current - Irr (A)
10000
Instantaneous On-state Current (A)
T = 25°C
J
T = 125°C
J
180
160
140
120
100
80
60
40
20
10
S 333S S
T
eries
T = 125 °C
J
I
T
= 500 A
M
300 A
200 A
100 A
50 A
1000
S 333SS
T
eries
100
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
20 30
40 50
60
70 80
90 100
R
ate Of Fall Of On-state Current - di/ dt (A/ µs)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 28-Aug-17
Document Number: 94377
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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