Analog PIN
Photodiode
FEATURES
• Hermetically Sealed Package with a single mode
fiber pigtail
• High Responsivity: 0.85 A/W
• Low Dark Current: 0.1 nA
• Low Distortion: < -75dBc
• High Optical Return Loss: > 40dB
• High Frequency Response: 2.0GHz
FID3S1HX/KX
HX
APPLICATIONS
• Analog Transmission Systems
• AM and FM CATV systems
KX
DESCRIPTION
The FID3S1HX/KX are PIN photodiode modules with a single mode
fiber pigtail specifically designed for multichannel analog transmission
systems. The photodiode uses a planar structure to achieve
low dark current, high responsivity and high reliability. The coupling
optics in the package is designed for very low optical reflection.
The package is hermetically sealed.
Edition 1.2
July 2004
1
FID3S1HX/KX
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Parameter
Storage Temperature
Operating Case Temperature
Forward Current
Reverse Current
Reverse Voltage
Symbol
Tstg
Top
IF
IR
VR
Ratings
-40 to +85
-40 to +80
5
3
20
Analog PIN
Photodiode
Unit
°C
°C
mA
mA
V
OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=25°C,
λ=1300
and 1500nm)
Parameter
Responsivity
Dark Current
Cut-off Frequency
Capacitance
2nd order intermodulation
distortion
3rd order intermodulation
distortion
Optical return loss
Symbol
R
ID
fc
Ct
IMD2
Limits
Max.
Min.
0.8
-
1.5
-
-
5
-
1.3
Unit
A/W
nA
GHz
pF
Conditions
VR=1V
VR=5V
RL=50Ω, VR=5V,
-3dB from 500KHz
f=1MHz, VR=5V
-
-75
dBc
2 laser, 2 tone, OMD=70% each,
Pin=-0dBm,
VR=5V (Note 1)
IMD3
-
-90
dBc
dB
ORL
40
-
(1) Modulation input light signals are from two independent laser sources with a modulation frequency f1=244 MHz and f2=250 MHz
respectively.
(2) Pigtail fiber: Singlemode fiber, core diameter 10±1µm, cladding diameter 125±2µm, difference of refractive index 0.3%.
(3) VR = 10V is recommended at Pin > 0dBm or f > 1GHz application.
2
Analog PIN
Photodiode
Fig. 1 Temperature Dependence of Responsivity
FID3S1HX/KX
Fig. 2 Dark Current vs. Reverse Voltage
6
Normalized Responsivity,
∆R/R
(25°C) (%)
λ
= 1300nm
VR = 1V
10-8
Ta = 85°C
10-9
4
2
Dark Current, ID (A)
10-10
Ta = 25°C
0
-2
10-11
Ta = -40°C
10-12
-4
-6
-40
-20
0
20
40
60
80
Temperature, Ta (°C)
10-13
0
10
Reverse Voltage, VR (V)
Fig. 3 Capacitance vs. Reverse Voltage
10
Ta=25°C
20
Fig. 4 Frequency Response
Ta = 25°C
VR = 5V
RL = 50Ω
λ
= 1300nm
Response (dB)
0
-3
-6
-9
f=1 MHz
Capacitance, Ct (pF)
1
0.1
0.2
0.5 1
5 10
50
2
10
102
Frequency (MHz)
103
Reverse Voltage, VR (V)
3
FID3S1HX/KX
Fig. 5 2nd Order Intermodulation
Distortion Characteristics
Total Received Optical Power, Pin (dBm)
-10
-5
0
+5
Analog PIN
Photodiode
Output Power of 2nd order
intermodulation products (dBm)
2 Tone, 2LD test
-80
Ta=25°C
λ=1300
nm
f1=244 MHz
f2=250 MHz
OMD=70% each
-100
RL=50Ω
VR=5V
-120
-140
-60
-40
-20
0
Output Power of Fundamentals, Pout (dBm)
Fig. 6 Frequency Response
-100
2nd order intermodulation
distortion, IMD2 (dBm)
Pin=-0dBm
-80
2 Tone, 2LD test
Ta=25°C
λ=1300
nm
f1=244 MHz
f2=250 MHz
RL=25Ω
VR=5V
-60
10
100
Optical Modulation Depth/ch, OMD (%)
4
Analog PIN
Photodiode
“HX” PACKAGE
FID3S1HX/KX
UNIT: mm
2
3
ø0.9
3-ø0.35
ø2.54
1
ø6
±0.1
11MIN
7.3 MAX
31
±1
1000 MIN
1
PD
3
CASE
2
“KX” PACKAGE
UNIT: mm
2 - R 1.25
2 - C1.5
ø2.54
ø6.0 MAX.
2
17.0
12.7
17.0
7.4
10 MIN.
1
2.0
3.7
7.4
3-ø0.35
4
3
28 MAX.
1
2
ANODE
CATHODE
3
CASE
5
ø0.9
1000 MIN.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
