MII75-12A3
IGBT (NPT) Module
V
CES
I
C25
= 2x 1200 V
=
90 A
2.2 V
V
CE(sat)
=
Phase leg
Part number
MII75-12A3
1
7
6
Backside: isolated
3
4
5
2
Features / Advantages:
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
Applications:
●
AC motor drives
●
Solar inverter
●
Medical equipment
●
Uninterruptible power supply
●
Air-conditioning systems
●
Welding equipment
●
Switched-mode and resonant-mode
power supplies
●
Inductive heating, cookers
●
Pumps, Fans
Package:
Y4
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
© 2013 IXYS all rights reserved
MII75-12A3
IGBT
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
I
CM
SCSOA
t
SC
I
SC
R
thJC
R
thCH
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Ratings
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
Conditions
T
VJ
=
25°C
min.
typ.
max.
1200
±20
±30
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
T
C
= 25°C
T
C
= 80 °C
T
C
= 25°C
I
C
=
I
C
=
50 A; V
GE
= 15 V
2 mA; V
GE
= V
CE
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125 °C
V
GE
= ±20 V
V
CE
= 600 V; V
GE
= 15 V; I
C
=
50 A
240
100
inductive load
V
CE
=
600 V; I
C
=
50 A
V
GE
= ±15 V; R
G
= 22
Ω
T
VJ
= 125 °C
70
500
70
7.6
5.6
V
GE
= ±15 V; R
G
= 22
Ω
V
CEmax
= 1200 V
V
CEmax
= 1200 V
V
CE
= 1200 V; V
GE
= ±15 V
R
G
= 22
Ω;
non-repetitive
T
VJ
= 125 °C
180
0.33
T
VJ
= 125 °C
6
4.5
V
CE
= V
CES
; V
GE
= 0 V
2.2
2.7
5.5
90
60
370
2.7
6.5
4
200
100
10
A
µs
A
0.33 K/W
K/W
Diode
V
RRM
I
F25
I
F 80
V
F
I
R
Q
rr
I
RM
t
rr
E
rec
R
thJC
R
thCH
forward voltage
reverse current
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
max. repetitive reverse voltage
forward current
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80 °C
I
F
=
50 A
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
-di
F
/dt = 400 A/µs
I
F
=
50 A; V
GE
= 0 V
T
VJ
= 125°C
1
3.5
40
200
1
0.66
1.80
1200
100
60
2.50
0.65
V
A
A
V
V
mA
mA
µC
A
ns
mJ
0.66 K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
© 2013 IXYS all rights reserved
MII75-12A3
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
terminal to terminal
terminal to backside
Y4
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
300
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
110
2.25
4.5
14.0
16.0
10.0
16.0
3600
3000
2.75
5.5
Assembly
Line
Date Code
Part No.
Circuit Diagram
yywwA
YYYYYYYYYYY
2D Matrix
Ordering
Standard
Part Number
MII75-12A3
Marking on Product
MII75-12A3
Delivery Mode
Box
Quantity
6
Code No.
466735
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
* on die level
T
VJ
= 150 °C
IGBT
Diode
V
0 max
R
0 max
1.5
20.1
1.3
10.8
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
© 2013 IXYS all rights reserved
MII75-12A3
Outlines Y4
67 ±0.2
2.8 x0.5
30 ±0.3
29.5
+0.5
- 0.2
7.5
0.25
M5
Ø 6.5
94 ±0.3
80 ±0.2
M5 x10
18.5 ±0.15
17 ±0.2
General tolerances:
DIN ISO 2768-T1-m
40 ±0.2
63 ±0.2
1
7
6
3
4
5
2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
© 2013 IXYS all rights reserved
8 9
28 ±0.15
1
2
3
34 ±0.2
15 ±0.2
10 11
Ø 12
5 4
7.7
5
7 6
+0.3
- 0.1
MII75-12A3
IGBT
120
T
VJ
= 25°C
V
GE
=17 V
15 V
13 V
120
T
VJ
= 125°C
V
GE
=17 V
15 V
100
V
CE
= 20 V
T
VJ
= 25°C
100
80
100
80
80
13 V
11 V
I
C
60
11 V
I
C
60
I
C
60
[A]
40
9V
[A]
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
9V
[A]
40
20
0
0.5
20
0
5
6
7
8
9
10
11
1.0
1.5
2.0
2.5
3.0
3.5
V
CE
[V]
Fig. 1 Typ. output characteristics
V
CE
[V]
Fig. 2 Typ. output characteristics
V
GE
[V]
Fig. 3 Typ. transfer characteristics
20
V
CE
= 600 V
I
C
= 50 A
24
120
12
10
600
500
400
15
18
t
d(on)
90
t
d(off)
V
GE
10
t
60
8
E
on
12
E
off
6
t
300
V
CE
= 600 V
V
GE
= ±15 V
E
off
R
G
= 22
T
VJ
= 125°C
t
f
[V]
5
[mJ]
t
r
[ns]
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
T
VJ
= 125°C
[mJ]
4
2
[ns]
200
100
0
6
E
on
30
0
0
50
100 150 200 250 300
0
0
20
40
60
80
100
0
0
0
20
40
60
80
100
Q
G
[nC]
Fig. 4 Typ. turn-on gate charge
I
C
[A]
Fig. 5 Typ. turn on energy & switching
times versus collector current
20
240
t
d(on)
E
on
I
C
[A]
Fig.6 Typ. turn off energy & switching
times versus collector current
10
1500
t
d(off)
1200
0.4
0.3
15
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
8
180
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
Z
thJC
0.2
single pulse
E
on
t
r
t
120
E
off
t
900
6
E
off
4
10
[mJ]
[K/W]
0.1
[mJ]
5
[ns]
60
[ns]
600
2
300
0
10
-4
10
-3
10
-2
10
-1
10
0
0
20
40
60
80
0
0
0
20
40
60
80
0
100
100
t [s]
Fig. 12 Typical transient
thermal impedance
R
G
[ ]
Fig. 9 Typ. turn on energy & switching
times versus gate resistor
R
G
[ ]
Fig. 9 Typ. turn off energy & switching
times versus gate resistor
20131206a
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
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