MOSFET 20V Vdss 2ohm Rds on Id +/-150mA N-Ch
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ROHM(罗姆半导体) |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | DFN0604-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 150 mA |
Rds On - Drain-Source Resistance | 5.4 Ohms |
Vgs th - Gate-Source Threshold Voltage | 300 mV |
Vgs - Gate-Source Voltage | 10 V |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | MouseReel |
系列 Packaging | Reel |
产品 Product | MOSFETs |
Transistor Type | 1 N-Channel |
类型 Type | Small Signal MOSFET |
Fall Time | 25 ns |
Pd-功率耗散 Pd - Power Dissipation | 100 mW |
Rise Time | 4 ns |
工厂包装数量 Factory Pack Quantity | 8000 |
Typical Turn-Off Delay Time | 12 ns |
Typical Turn-On Delay Time | 3 ns |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved