The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8
bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 10/12/15/20 ns with output enable access times (t
OE
) of 5/6/7/8 ns are ideal for high-
performance applications. The chip enable input CE permits easy memory and expansion with multiple-bank memory systems.
When CE is high, the device enters standby mode. If inputs are still toggling, the device will consume I
SB
power. If the bus is static, then full
standby power is reached (I
SB1
). For example, the AS7C1026B is guaranteed not to exceed 55 mW under nominal full standby conditions.
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0 through I/O7 is written on
the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after
outputs have been disabled with
output enable (
OE
) or write enable
(WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chips drive I/O pins
with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output
drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5 V supply. The AS7C1025B is packaged in common
industry standard packages.
Absolute maximum ratings
Parameter
Voltage on V
CC
relative to GND
Voltage on any pin relative to GND
Power dissipation
Storage temperature (plastic)
Ambient temperature with V
CC
applied
DC current into outputs (low)
Symbol
V
t1
V
t2
P
D
T
stg
T
bias
I
OUT
Min
–0.50
–0.50
–
–65
–55
–
Max
+7.0
V
CC
+ 0.5
1.0
+150
+125
20
Unit
V
V
W
o
C
o
C
mA
NOTE: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CE
H
L
L
L
WE
X
H
H
L
OE
X
H
L
X
Data
High Z
High Z
D
OUT
D
IN
Mode
Standby (I
SB
, I
SB1
)
Output disable (I
CC
)
Read (I
CC
)
Write (I
CC
)
Key: X = don’t care, L = low, H = high.
08/08/08, v. 2.0
Alliance Memory Inc.
P. 2 of 9
AS7C1025B
®
Recommended operating conditions
Parameter
Supply voltage
Input voltage
Ambient operating temperature
V
IL
min = -1.0V for pulse width less than 5ns
V
IH
max = V
CC
+2.0V for pulse width less than 5ns.
commercial
industrial
Symbol
V
CC
V
IH
V
IL
T
A
T
A
Min
4.5
2.2
–0.5
0
–40
Nominal
5.0
–
–
–
–
Max
5.5
V
CC
+ 0.5
0.8
70
85
Unit
V
V
V
o
o
C
C
DC operating characteristics (over the operating range)
2008年7月9日，欧司朗光电半导体率先推出发光二极管光线数据文件的互联网访问平台，是全球第一家提供该类互联网资源的 LED 制造商。这些光线文件不仅描述 LED 光线的发射模式，而且还包含发射点坐标、发射方向、光线强度和波长等信息。欧司朗的互联网信息资源涵盖包括红外发光二极管 (IRED) 在内的几乎所有 LED 产品组合。透过这平台，客户们不论白天或黑夜，随时都可以获取最新的数据，这无疑为他...[详细]
便携式医疗设备的特殊性决定了它们应该是对用户友好的、必须工作在无菌环境下，并且空间占用小、耗能低。 同时，便携式医疗设备还需要足够的计算能力以便处理医疗数据，能够连接到无线或有线接口以便记录和发送数据。从设计人员的角度考虑，上述需求需要低功耗的单片机（MCU）和数字信号控制器（Digital Signal Controller，DSC）。 正是有了嵌入式处理器，设计人员才有可能设...[详细]
淘e淘
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
