MBR30H100CTG,
MBRF30H100CTG
Switch‐mode
Power Rectifier
100 V, 30 A
www.onsemi.com
Features and Benefits
•
•
•
•
•
•
Low Forward Voltage: 0.67 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
These are Pb−Free Devices
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
100 VOLTS
1
2, 4
3
Applications
•
Power Supply − Output Rectification
•
Power Management
•
Instrumentation
Mechanical Characteristics:
MARKING
DIAGRAMS
4
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•
ESD Rating:
Human Body Model = 3B
Machine Model = C
TO−220
CASE 221A
STYLE 6
AYWW
B30H100G
AKA
1
2
3
TO−220 FULLPAK
CASE 221AH
AYWW
B30H100G
AKA
1
2
3
A
Y
WW
B30H100
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 6
Publication Order Number:
MBR30H100CT/D
MBR30H100CTG, MBRF30H100CTG
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Per Diode
(T
C
= 156°C)
Per Device
Peak Repetitive Forward Current
(Square Wave, 20 kHz, T
C
= 151°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
R
)
Controlled Avalanche Energy (see test conditions in Figures 13 and 14)
ESD Ratings: Machine Model = C
Human Body Model = 3B
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
15
30
I
FM
I
FSM
T
J
T
stg
dv/dt
W
AVAL
30
250
+175
*65
to +175
10,000
200
> 400
> 8000
A
A
°C
°C
V/ms
mJ
V
Value
100
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBR30H100CTG) − Junction-to-Case
− Junction-to-Ambient
(MBRF30H100CTG) − Junction-to-Case
− Junction-to-Ambient
Symbol
R
qJC
R
qJA
R
qJC
R
qJA
Value
2.0
60
4.2
75
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 15 A, T
J
= 25°C)
(i
F
= 15 A, T
J
= 125°C)
(i
F
= 30 A, T
J
= 25°C)
(i
F
= 30 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
J
= 125°C)
(Rated DC Voltage, T
J
= 25°C)
Symbol
v
F
−
−
−
−
i
R
−
−
1.1
0.0008
6.0
0.0045
0.76
0.64
0.88
0.76
0.80
0.67
0.93
0.80
mA
Min
Typ
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
ORDERING INFORMATION
Device Order Number
MBR30H100CTG
MBRF30H100CTG
Package Type
TO−220
(Pb−Free)
TO−220FP
(Pb−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
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2
MBR30H100CTG, MBRF30H100CTG
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
100
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
100
10
175°C
10
175°C
T
J
= 150°C
1.0
125°C
1.0
T
J
= 150°C
125°C
0.1
0.0
25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
v
F,
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1
0.0
25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
v
F,
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1E−01
I
R
, REVERSE CURRENT (AMPS)
1E−02
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
0
T
J
= 25°C
T
J
= 125°C
T
J
= 150°C
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
1E−01
1E−02
1E−03
T
J
= 150°C
T
J
= 125°C
1E−04
1E−05
T
J
= 25°C
1E−06
1E−07
1E−08
0
20
40
60
80
100
20
40
60
80
100
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
dc
, AVERAGE FORWARD CURRENT (AMPS)
26
24
22
20
18
16
14
12
10
8.0
6.0
4.0
2.0
0
130
SQUARE WAVE
135
140
145
150
155
160
165
170
175
180
26
24
22
20
18
16
14
12
10
8.0
6.0
4.0
2.0
0
, AVERAGE FORWARD CURRENT (AMPS)
RATED VOLTAGE APPLIED
R
qJA
= 16° C/W
R
qJA
= 60° C/W
(NO HEATSINK)
dc
SQUARE WAVE
dc
F (AV)
I
F (AV)
I
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (C°)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Case Per Leg
Figure 6. Current Derating, Ambient Per Leg
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3
MBR30H100CTG, MBRF30H100CTG
P
, AVERAGE FORWARD POWER DISSIPATION (WATTS)
F (AV)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10000
T
J
= 175°C
SQUARE WAVE
C, CAPACITANCE (pF)
1000
T
J
= 25°C
dc
100
10
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
0
20
40
60
80
100
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Forward Power Dissipation
Figure 8. Capacitance
R(t), TRANSIENT THERMAL RESISTANCE
100
D = 0.5
10
0.2
0.1
0.05
0.01
P
(pk)
t
1
t
2
SINGLE PULSE
DUTY CYCLE, D = t
1
/t
2
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
100
1000
1
0.1
0.01
0.000001
0.00001
0.0001
Figure 9. Thermal Response Junction−to−Ambient for MBR30H100CT
R(t), TRANSIENT THERMAL RESISTANCE
10
1
D = 0.5
0.2
0.1
0.05
0.1
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
1000
Figure 10. Thermal Response Junction−to−Case for MBR30H100CT
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4
MBR30H100CTG, MBRF30H100CTG
R(t), TRANSIENT THERMAL RESISTANCE
10
D = 0.5
1.0
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1.0
0.1
P
(pk)
Z
qJC
(t) = r(t) R
qJC
R
qJC
= 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC
(t)
10
100
1000
0.001
0.000001
0.00001
Figure 11. Thermal Response Junction−to−Case for MBRF30H100CT
100
R(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
1.0
P
(pk)
Z
qJC
(t) = r(t) R
qJC
R
qJC
= 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC
(t)
10
100
1000
0.1
0.01
0.001
0.000001
SINGLE PULSE
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1.0
0.00001
Figure 12. Thermal Response Junction−to−Ambient for MBRF30H100CT
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