Specification Comparison
Vishay Siliconix
TN0200K vs. TN0200T
Description: N-Channel MOSFET
Package:
SOT-23
Pin Out:
Identical
Part Number Replacements:
TN0200K-T1 Replaces TN0200T-T1
TN0200K-T1-E3 (Lead (Pb)-free version) Replaces TN0200T-T1
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
See Note
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
and T
stg
R
thJA
TN0200K
20
±8
0.73
0.58
4
0.35
0.22
- 55 to 150
357
TN0200T
20
±8
0.73
0.58
4
0.35
0.22
- 55 to 150
357
W
°C
°C/W
A
Unit
V
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Turn-On Time
Turn-Off Time
NS denotes parameter not specified.
Specification comparisons are supplied as a courtesy to compare two devices and do not constitute a commercial product datasheet or any
guarantee of identical performance. Designers should refer to the appropriate datasheets of the same number for guaranteed specification limits.
t
d(on)
t
r
t
d(off)
t
f
17
20
55
30
25
30
85
45
8
14
21
7
13
21
30
11
ns
Q
g
Q
gs
Q
gd
1400
190
300
2000
1900
50
750
2800
pC
nC
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 2.5 V
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
2.5
1.5
0.2
0.25
2.2
0.8
1.2
0.4
0.5
20
0.45
0.6
1.0
± 5000
1
2.5
1.5
0.29
0.34
2.2
0.8
1.2
0.4
0.5
20
0.5
0.9
1.5
± 100
1
V
nA
µA
A
Ω
S
V
Symbol
TN0200K
Min
Typ
Max
Min
TN0200T
Typ
Max
Unit
Document Number: 73004
Revision: 09-Nov-06
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