MJE700G, MJE702G,
MJE703G (PNP), MJE800G,
MJE802G, MJE803G (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
http://onsemi.com
•
High DC Current Gain − h
FE
= 2000 (Typ) @ I
C
= 2.0 Adc
•
Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
•
Choice of Packages − MJE700 and MJE800 Series
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
Collector−Base Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
60
80
V
CB
60
80
V
EB
I
C
I
B
P
D
40
0.32
T
J
, T
stg
–55 to +150
W
mW/_C
_C
5.0
4.0
0.1
Vdc
Adc
Adc
Vdc
Value
Unit
Vdc
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
COMPLEMENTARY SILICON
40 WATT
NPN
COLLECTOR 2, 4
BASE
3
PNP
COLLECTOR 2, 4
BASE
3
EMITTER 1
MJE800
MJE802
MJE803
EMITTER 1
MJE700
MJE702
MJE703
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
JEx0yG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
3.12
83.3
Unit
_C/W
_C/W
Y
= Year
WW
= Work Week
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
December, 2013 − Rev. 12
Publication Order Number:
MJE700/D
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 50 mAdc, I
B
= 0)
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G, MJE803G
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
MJE700G, MJE800G
(V
CE
= 80 Vdc, I
B
= 0)
MJE702G, MJE703G, MJE802G, MJE803G
Collector Cutoff Current
(V
CB
= Rated BV
CEO
, I
E
= 0)
(V
CB
= Rated BV
CEO
, I
E
= 0, T
C
= 100_C)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc)
MJE700G, MJE702G, MJE800G, MJE802G
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
MJE703G, MJE803G
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc)
All devices
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 1.5 Adc, I
B
= 30 mAdc)
MJE700G, MJE702G, MJE800G, MJE802G
(I
C
= 2.0 Adc, I
B
= 40 mAdc)
MJE703G, MJE803G
(I
C
= 4.0 Adc, I
B
= 40 mAdc)
All devices
Base−Emitter On Voltage (Note 1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc)
MJE700G, MJE702G, MJE800G, MJE802G
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
MJE703G, MJE803G
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc)
All devices
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
h
fe
1.0
−
−
h
FE
750
750
100
V
CE(sat)
−
−
−
V
BE(on)
−
−
−
2.5
2.5
3.0
2.5
2.8
3.0
Vdc
−
−
−
Vdc
−
V
(BR)CEO
60
80
I
CEO
−
−
I
CBO
−
−
I
EBO
−
2.0
100
500
mAdc
100
100
mAdc
−
−
mAdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
50
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
4.0
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
TUT
V
2
APPROX
+ 8.0 V
0
V
1
APPROX
-12 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
51
R
B
V
CC
- 30 V
R
C
t
s
2.0
SCOPE
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
t, TIME (
μ
s)
t
f
1.0
0.8
0.6
0.4
PNP
NPN
0.1
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
t
r
D
1
≈
6.0 k
≈
150
+ 4.0 V
25
ms
For t
d
and t
r
, D
1
id disconnected
and V
2
= 0, R
B
and R
C
are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
t
d
@ V
BE(off)
= 0
0.2
0.04 0.06
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
0.3
0.2
0.1
0.05
0.01
SINGLE PULSE
Figure 3. Switching Times
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
D = 0.5
0.2
q
JC
(t) = r(t)
q
JC
q
JC
= 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
0.1
0.07
0.05
0.03
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response (MJE700, 800 Series)
ACTIVE−REGION SAFE−OPERATING AREA
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
5.0 ms
1.0 ms
100
ms
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
5.0 ms
1.0 ms
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
100
ms
dc
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE702, 703
MJE700
7.0
10
20
30
50
70
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
dc
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE802, 803
MJE800
7.0
10
20
30
50
70
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. MJE700 Series
Figure 6. MJE800 Series
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 are based on T
J(pk)
= 150_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
http://onsemi.com
3
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
PNP
MJE700 Series
6.0 k
4.0 k
hFE, DC CURRENT GAIN
3.0 k
2.0 k
- 55°C
1.0 k
800
600
400
300
0.04 0.06
T
J
= 125°C
25°C
V
CE
= 3.0 V
4.0 k
hFE, DC CURRENT GAIN
3.0 k
2.0 k
25°C
- 55°C
6.0 k
T
J
= 125°C
V
CE
= 3.0 V
NPN
MJE800 Series
1.0 k
800
600
400
300
0.04 0.06
0.1
0.4 0.6
1.0
0.2
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
0.1
0.4 0.6
1.0
0.2
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 7. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
=
0.5 A
1.0 A
2.0 A
4.0 A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.4
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.1
I
C
=
0.5 A
1.0 A
2.0 A
4.0 A
T
J
= 25°C
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
B
, BASE CURRENT (mA)
I
B
, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
2.2
T
J
= 25°C
1.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 250
V, VOLTAGE (VOLTS)
2.2
T
J
= 25°C
1.8
V
BE(sat)
@ I
C
/I
B
= 250
1.4
V
BE
@ V
CE
= 3.0 V
1.4
V
BE
@ V
CE
= 3.0 V
1.0
V
CE(sat)
@ I
C
/I
B
= 250
0.6
1.0
V
CE(sat)
@ I
C
/I
B
= 250
0.6
0.2
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
0.2
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
http://onsemi.com
4
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
ORDERING INFORMATION
Device
MJE700G
MJE702G
MJE703G
MJE800G
MJE802G
MJE803G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
50 Units / Bulk
50 Units / Bulk
50 Units / Bulk
50 Units / Bulk
50 Units / Bulk
50 Units / Bulk
http://onsemi.com
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
