MOSFET 120V 6Ohm
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Microchip(微芯科技) |
产品种类 Product Category | MOSFET |
RoHS | N |
技术 Technology | Si |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-92-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 120 V |
Id - Continuous Drain Current | 230 mA |
Rds On - Drain-Source Resistance | 6 Ohms |
Vgs - Gate-Source Voltage | 30 V |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Channel Mode | Enhancement |
高度 Height | 5.33 mm |
长度 Length | 5.21 mm |
Transistor Type | 1 N-Channel |
类型 Type | FET |
宽度 Width | 4.19 mm |
Fall Time | 12 ns |
Pd-功率耗散 Pd - Power Dissipation | 1 W |
Rise Time | 8 ns |
工厂包装数量 Factory Pack Quantity | 1000 |
Typical Turn-Off Delay Time | 18 ns |
Typical Turn-On Delay Time | 8 ns |
单位重量 Unit Weight | 0.007760 oz |
VN1206L | VN1206L-G-P005 | VN1206L-G | VN1206L-P003 | VN1206L-G-P013 | VN1206L-G-P003 | |
---|---|---|---|---|---|---|
描述 | MOSFET 120V 6Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 120V 6Ohm | MOSFET 120V 6Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET N-CH Enhancmnt Mode MOSFET |
制造商 Manufacturer |
Microchip(微芯科技) | Microchip(微芯科技) | - | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) |
产品种类 Product Category |
MOSFET | MOSFET | - | MOSFET | MOSFET | MOSFET |
RoHS | N | Detailsecsdrquedtdcyu | - | No | Details | Details |
技术 Technology |
Si | Si | - | Si | Si | Si |
安装风格 Mounting Style |
Through Hole | Through Hole | - | Through Hole | Through Hole | Through Hole |
封装 / 箱体 Package / Case |
TO-92-3 | TO-92-3 | - | TO-92-3 | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel | - | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | - | N-Channel | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | 120 V | 120 V | - | 120 V | 120 V | 120 V |
Id - Continuous Drain Current | 230 mA | 230 mA | - | 230 mA | 230 mA | 230 mA |
Rds On - Drain-Source Resistance | 6 Ohms | 10 Ohms | - | 6 Ohms | 10 Ohms | 10 Ohms |
Vgs - Gate-Source Voltage | 30 V | - | - | 30 V | 30 V | 30 V |
最小工作温度 Minimum Operating Temperature |
- 55 C | - | - | - 55 C | - 55 C | - 55 C |
最大工作温度 Maximum Operating Temperature |
+ 150 C | - | - | + 150 C | + 150 C | + 150 C |
Configuration | Single | Single | - | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - | Enhancement | Enhancement | Enhancement |
Transistor Type | 1 N-Channel | 1 N-Channel | - | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Fall Time | 12 ns | - | - | 12 ns | 12 ns | 12 ns |
Pd-功率耗散 Pd - Power Dissipation |
1 W | - | - | 1 W | 1 W | 1 W |
Rise Time | 8 ns | - | - | 8 ns | 15 ns | 8 ns |
工厂包装数量 Factory Pack Quantity |
1000 | 2000 | - | 2000 | 2000 | 2000 |
Typical Turn-Off Delay Time | 18 ns | - | - | 18 ns | 15 ns | 18 ns |
Typical Turn-On Delay Time | 8 ns | - | - | 8 ns | 20 ns | 8 ns |
单位重量 Unit Weight |
0.007760 oz | 0.016000 oz | - | 0.007760 oz | 0.016000 oz | 0.016000 oz |
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