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BD433/435/437 — NPN Epitaxial Silicon Transistor
July 2011
BD433/435/437
NPN Epitaxial Silicon Transistor
Features
• Medium Power Linear and Switching Applications
• Complement to BD434, BD436 and BD438 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
Ordering Information
Part Number
BD433S
BD435S
BD435STU
BD437S
Marking
BD433
BD435
BD435
BD437
Package
TO-126
TO-126
TO-126
TO-126
Packing Method
BULK
BULK
RAIL
BULK
Remarks
* The suffix "S" of FSID denotes TO126 package.
Absolute Maximum Ratings
Symbol
V
CBO
T
A
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
: BD433
: BD435
: BD437
Collector-Emitter Voltage
: BD433
: BD435
: BD437
Collector-Emitter Voltage
: BD433
: BD435
: BD437
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
Value
22
32
45
22
32
45
22
32
45
5
4
7
1
36
150
- 65 to 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
© 2011 Fairchild Semiconductor Corporation
BD433/435/437 Rev. B0
1
www.fairchildsemi.com
BD433/435/437 — NPN Epitaxial Silicon Transistor
Electrical Characteristics
Symbol
V
CEO
(sus)
T
A
= 25°C unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage
: BD433
: BD435
: BD437
Collector Cut-off Current
: BD433
: BD435
: BD437
Collector Cut-off Current
: BD433
: BD435
: BD437
Emitter Cut-off Current
* DC Current Gain
: BD433/435
: BD437
: ALL DEVICE
: BD433/435
: BD437
* Collector-Emitter Saturation Volt-
age
: BD433
: BD435
: BD437
* Base-Emitter ON Voltage
: BD433
: BD435
: BD437
Current Gain Bandwidth Product
Test Condition
I
C
= 100mA, I
B
= 0
Min.
22
32
45
Typ.
Max.
Units
V
V
V
I
CBO
V
CB
= 22V, I
E
= 0
V
CB
= 32V, I
E
= 0
V
CB
= 45V, I
E
= 0
V
CE
= 22V, V
BE
= 0
V
CE
= 32V, V
BE
= 0
V
CE
= 45V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 1V, I
C
= 2A
40
30
85
50
40
130
130
140
100
100
100
100
100
100
1
μA
μA
μA
μA
μA
μA
mA
I
CEO
I
EBO
h
FE
V
CE
(sat)
I
C
= 2A, I
B
= 0.2A
0.2
0.2
0.2
0.5
0.5
0.6
1.1
1.1
1.2
V
V
V
V
V
V
MHz
V
BE
(on)
V
CE
= 1V, I
C
= 2A
f
T
V
CE
= 1V, I
C
= 250mA
3
* Pulse Test: PW≤300μs, duty Cycle≤1.5% Pulsed
© 2011 Fairchild Semiconductor Corporation
BD433/435/437 Rev. B0
2
www.fairchildsemi.com
BD433/435/437 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
1000
1
100
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= 1V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
0.1
10
1
0.01
0.1
1
10
100
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
5.0
4.5
1000
V
CE
= 1V
I
C
[A], COLLECTOR CURRENT
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
C
CBO
(pF), COLLECTOR BASE CAPACITANCE
100
10
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
1
0.1
1
10
100
1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
10
I
C
MAX. (Pulsed)
10 1m
ms s
48
10
μ
s
42
100
μ
s
I
C
[A], COLLECTOR CURRENT
I
C
Max. (Continuous)
DC
P
C
[W], POWER DISSIPATION
100
36
30
24
18
12
6
0
0
25
50
o
1
0.1
1
BD433
BD435
BD437
10
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
© 2011 Fairchild Semiconductor Corporation
BD433/435/437 Rev. B0
3
www.fairchildsemi.com
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