IRF644B — N-Channel BFET MOSFET
December 2013
IRF644B
N-Channel BFET MOSFET
250 V, 14 A, 280 mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficiency
switching DC/DC converters and switch mode power
supplies.
Features
• 14 A, 250 V, R
DS(on)
= 280 mΩ @ V
GS
= 10 V
• Low gate charge (Typ. 47 nC)
• Low Crss (Typ. 30 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
D
G
D
S
G
TO-220
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
IRF644B_FP001
250
14
8.9
56
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
480
14
13.9
4.8
139
1.11
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
IRF644B_FP001
0.9
0.5
62.5
Unit
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
IRF644B Rev. C0
1
www.fairchildsemi.com
IRF644B — N-Channel BFET MOSFET
Package Marking and Ordering Information
Part Number
IRF644B_FP001
Top Mark
IRF644B
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted.
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
ΔBV
DSS
/
ΔT
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
μA
I
D
= 250
μA,
Referenced to 25°C
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 200 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
250
--
--
--
--
--
--
0.24
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μA
μA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 7.0 A
V
DS
= 40 V, I
D
= 7.0 A
2.0
--
--
--
0.22
11.7
4.0
0.28
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1250
150
30
1600
195
40
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 200 V, I
D
= 14 A,
V
GS
= 10 V
(Note 4)
V
DD
= 125 V, I
D
= 14 A,
R
G
= 25
Ω
)
--
--
--
20
115
150
95
47
6.2
23
50
240
310
200
60
--
--
ns
ns
ns
ns
nC
nC
nC
(Note 4)
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 14 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 14 A,
dI
F
/ dt = 100 A/μs
--
--
--
--
--
--
--
--
240
1.96
14
56
1.5
--
--
A
A
V
ns
μC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 3.9 mH, I
AS
= 14 A, V
DD
= 50 V, R
G
= 25
Ω,
starting T
J
= 25°C.
3. I
SD
≤
14 A, di/dt
≤
300 A/μs, V
DD
≤
BV
DSS,
starting T
J
= 25°C.
4. Essentially independent of operating temperature.
©2001 Fairchild Semiconductor Corporation
IRF644B Rev. C0
2
www.fairchildsemi.com
IRF644B — N-Channel BFET MOSFET
Typical Characteristics
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
10
1
150 C
10
0
o
10
0
25 C
-55 C
o
o
※
Notes :
1. 250μs Pulse Test
2. T
C
= 25
℃
※
Notes :
1. V
DS
= 40V
2. 250μs Pulse Test
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
I
DR
, Reverse Drain Current [A]
1.2
V
GS
= 10V
V
GS
= 20V
10
1
0.9
0.6
10
0
0.3
※
Note : T
J
= 25
℃
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0.0
0
10
20
30
40
50
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3500
3000
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
10
V
DS
= 50V
V
DS
= 125V
V
GS
, Gate-Source Voltage [V]
Capacitance [pF]
2000
1500
1000
500
0
-1
10
C
iss
C
oss
C
rss
8
V
DS
= 200V
6
4
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
2
※
Note : I
D
= 14 A
0
10
0
10
1
0
5
10
15
20
25
30
35
40
45
50
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
IRF644B Rev. C0
3
www.fairchildsemi.com
IRF644B — N-Channel BFET MOSFET
Typical Characteristics
(Continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μA
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 7.0 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Tem
perature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
15
10
2
Operation in This Area
is Limited by R
DS(on)
12
I
D
, Drain Current [A]
1 ms
10
1
I
D
, Drain Current [A]
100
μ
s
10 ms
DC
9
6
10
0
※
Notes :
o
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
3
10
-1
10
0
10
1
10
2
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Z
θJC
(t), Thermal Response [
o
C/W]
Z
θ
JC
(t), Thermal Response
10
0
D = 0 .5
0 .2
10
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※
N o te s :
1 . Z
θ
J C
(t) = 0 .9
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
P
DM
t
1
t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
IRF644B Rev. C0
4
www.fairchildsemi.com
IRF644B — N-Channel BFET MOSFET
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
10V
Q
gs
Q
g
V
GS
Q
gd
DUT
I
G
= const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V
DS
R
G
V
GS
10V
R
L
V
DD
V
DS
90%
V
GS
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Figure 13. Resistive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
V
GS
10V
GS
t
p
BV
DSS
1
---- L I
AS2
--------------------
E
AS
=
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
I
D
(t)
V
DD
t
p
DUT
V
DS
(t)
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2001 Fairchild Semiconductor Corporation
IRF644B Rev. C0
5
www.fairchildsemi.com
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