PD - 97404
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5
μS
short circuit SOA
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
Temperature co-efficient
Tight parameter distribution
Lead Free Package
IRGP4063PbF
IRGP4063-EPbF
C
V
CES
= 600V
I
C
= 48A, T
C
= 100°C
G
E
t
SC
≥
5μs, T
J(max)
= 175°C
n-channel
C
V
CE(on)
typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
C
GC
E
TO-247AC
IRGP4063PbF
E
GC
TO-247AD
IRGP4063-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
600
96
48
Units
V
h
c
144
192
±20
±30
330
170
-55 to +175
A
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
°C/W
1
www.irf.com
06/30/09
IRGP4063PbF/IRGP4063-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
Typ.
—
0.30
1.65
2.0
2.05
—
-21
32
1.0
450
—
Max. Units
—
—
2.14
—
—
6.5
—
—
150
1000
±100
nA
V
V
Conditions
V
GE
= 0V, I
C
= 150μA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
f
Ref.Fig
CT6
CT6
5,6,7
8,9,10
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 48A, V
GE
= 15V, T
J
= 150°C
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 1.4mA
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔTJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
8,9
10,11
gfe
I
CES
I
GES
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
S V
CE
= 50V, I
C
= 48A, PW = 80μs
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
95
28
35
625
1275
1900
60
40
145
35
1625
1585
3210
55
45
165
45
3025
245
90
Max. Units
140
42
53
1141
1481
2622
78
56
176
46
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
ns
μJ
ns
μJ
nC
I
C
= 48A
V
GE
= 15V
V
CC
= 400V
Conditions
Ref.Fig
18
CT1
g
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
=10Ω, L= 200μH, L
S
=150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
CT4
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
CT4
g
I
C
= 48A, V
CC
= 400V, V
GE
=15V
R
G
=10Ω, L=200μH, L
S
=150nH, T
J
= 175°C
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH, L
S
= 150nH
T
J
= 175°C
f
12, 14
CT4
WF1, WF2
13, 15
CT4
WF1
WF2
17
Energy losses include tail & diode reverse recovery
f = 1.0Mhz
T
J
= 175°C, I
C
= 192A
V
CC
= 480V, Vp =600V
Rg = 10Ω, V
GE
= +15V to 0V
4
CT2
FULL SQUARE
5
—
—
μs
V
CC
= 400V, Vp =600V
Rg = 10Ω, V
GE
= +15V to 0V
16, CT3
WF3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10Ω.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Turn-on energy is measured using the same co-pak diode as IRGP4063DPbF.
Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 80A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
2
www.irf.com
IRGP4063PbF/IRGP4063-EPbF
100
90
80
70
350
300
250
50
40
30
20
10
0
0
25
50
75
100 125 150 175 200
T C (°C)
Ptot (W)
60
IC (A)
200
150
100
50
0
0
25
50
75
100 125 150 175 200
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
10μsec
100μsec
100
IC (A)
IC (A)
10
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
1000
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
200
180
160
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=15V
200
180
160
140
ICE (A)
ICE (A)
120
100
80
60
40
20
0
0
2
4
6
120
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
8
10
0
2
4
6
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
VCE (V)
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
www.irf.com
3
IRGP4063PbF/IRGP4063-EPbF
200
180
160
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VCE (V)
20
18
16
14
12
10
8
6
4
2
0
ICE = 24A
ICE = 48A
ICE = 96A
ICE (A)
120
100
80
60
40
20
0
0
2
4
6
8
10
5
10
VGE (V)
15
20
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
20
18
16
14
20
18
16
14
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= -40°C
VCE (V)
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 24A
ICE = 48A
ICE = 96A
12
10
8
6
4
2
0
ICE = 24A
ICE = 48A
ICE = 96A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 25°C
200
180
160
140
T J = 25°C
6000
5000
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 175°C
T J = 175°C
Energy (μJ)
EOFF
4000
3000
2000
1000
0
EON
ICE (A)
120
100
80
60
40
20
0
0
5
VGE (V)
10
15
0
50
IC (A)
100
150
Fig. 11
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
Fig. 12
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
4
www.irf.com
IRGP4063PbF/IRGP4063-EPbF
1000
5000
4500
4000
EOFF
EON
Swiching Time (ns)
Energy (μJ)
tdOFF
100
tdON
tF
tR
3500
3000
2500
2000
1500
10
0
20
40
IC (A)
60
80
100
1000
0
25
50
75
100
125
Rg (Ω)
Fig. 13
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1000
tdOFF
Swiching Time (ns)
Fig. 14
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
18
16
14
400
350
300
tR
100
tF
Current (A)
Time (μs)
tdON
12
10
8
6
250
200
150
100
50
8
10
12
14
16
18
VGE (V)
10
0
25
50
75
100
125
RG (
Ω
)
4
Fig. 15
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
10000
16
Fig. 16
- V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
VGE, Gate-to-Emitter Voltage (V)
Cies
14
12
10
8
6
4
2
0
V CES = 300V
V CES = 400V
Capacitance (pF)
1000
Coes
100
Cres
10
0
20
40
60
80
100
VCE (V)
0
25
50
75
100
Q G, Total Gate Charge (nC)
Fig. 17
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 18
- Typical Gate Charge vs. V
GE
I
CE
= 48A; L = 600μH
www.irf.com
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
