d. Maximum under steady state conditions is 125 °C/W.
Document Number: 73891
S10-0646-Rev. C, 22-Mar-10
www.vishay.com
1
t
≤
5s
Steady
Symbol
R
thJA
R
thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Si1472DH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 2.3 A, dI/dt = 100 A/µs
I
S
= 1.8 A
0.8
12.3
5
7.6
4.7
T
C
= 25 °C
2.3
15
1.2
19
7.5
ns
A
V
nC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 5.4
Ω
I
D
≅
2.8 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 4.4
Ω
I
D
≅
3.4 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 4.2 A
V
DS
= 24V, V
GS
= 4.5 V, I
D
= 4.2 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
380
75
45
7
3.3
1.2
1.0
7.1
7.0
56
18
5.5
15
95
12
7
10.6
11
84
27
9
23
143
18
11
ns
ns
Ω
11
5
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4.2 A
V
GS
= 4.5 V, I
D
= 3.5 A
V
DS
= 15 V, I
D
= 4.2 A
15
0.046
0.065
8.5
0.057
0.082
1
30
25.15
5.6
3
± 100
1
10
V
mV/°C
V
nA
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73891
S10-0646-Rev. C, 22-Mar-10
Si1472DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
15
V
GS
= 10
V
thru 5
V
12
3
I
D
- Drain Current (A)
V
GS
= 4
V
9
I
D
- Drain Current (A)
2
6
T
C
= 125 °C
1
3
V
GS
= 3
V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
T
C
= 25 °C
T
C
= - 55 °C
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.10
500
Transfer Characteristics Curves vs. Temperature
R
DS(on)
- On-Resistance (Ω)
0.08
400
C
iss
C - Capacitance (pF)
V
GS
= 4.5
V
0.06
V
GS
= 10
V
0.04
300
200
C
oss
100
C
rss
0.02
0.00
0
3
6
9
12
15
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 4.2 A
1.8
Capacitance
V
GS
- Gate-to-Source Voltage (V)
8
R
DS(on)
- On-Resistance
V
DS
= 15
V
6
V
GS
= 24
V
4
1.5
(Normalized)
V
GS
= 10
V
I
D
= 4.2 A
1.2
V
GS
= 4.5
V
I
D
= 3.4 A
0.9
2
0
0
2
4
6
8
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73891
S10-0646-Rev. C, 22-Mar-10
www.vishay.com
3
Si1472DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
10
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.10
I
D
= 4.2 A
0.08
T
A
= 125 °C
I
S
- Source Current (A)
1
0.06
T
A
= 25 °C
0.04
0.1
T
J
= 150 °C
T
J
= 25 °C
0.01
0
0.02
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.6
2.4
2.2
I
D
= 250
µA
V
GS(th)
(
V
)
2.0
1.8
1.6
1.4
1.2
- 50
R
DS(on)
vs. V
GS
vs. Temperature
30
25
20
Po
w
er (
W
)
15
10
5
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power
10
I
D
- Drain Current (A)
P(t) = 10 ms
P(t) = 100 ms
1
P(t) = 1 s
P(t) = 10 s
DC
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73891
S10-0646-Rev. C, 22-Mar-10
Si1472DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
6.0
3.5
3.0
Package Limited
2.5
Po
w
er (W)
2.0
1.5
1.0
1.0
0.5
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
5.0
I
D
- Drain Current (A)
4.0
3.0
2.0
0.0
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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