NCV8752
200 mA, Ultra-Low
Quiescent Current, I
Q
12
mA,
Ultra-Low Noise, Low
Dropout Regulator
Noise sensitive RF applications such as Power Amplifiers in
satellite radios, infotainment equipment, and precision
instrumentation require very clean power supplies. The NCV8752 is
200 mA LDO that provides the engineer with a very stable, accurate
voltage with ultra low noise and very high Power Supply Rejection
Ratio (PSRR) suitable for RF applications. The device doesn’t require
any additional noise bypass capacitor to achieve ultra low noise
performance. In order to optimize performance for battery operated
portable applications, the NCV8752 employs the Auto Low−Power
Function for Ultra Low Quiescent Current consumption.
Features
www.onsemi.com
XDFN6
CASE 711AE
TSOP−5
CASE 483
MARKING DIAGRAMS
1
X MG
G
XDFN6
5
XXXAYWG
G
1
TSOP−5
XXX
A
M
Y
W
G
= Specific Device Code
= Assembly Location
= Date Code
= Year
= Work Week
= Pb−Free Package
•
Operating Input Voltage Range: 2.0 V to 5.5 V
•
Available in Fixed Voltage Options: 0.8 to 3.5 V
•
•
•
•
•
•
•
•
•
•
•
•
•
Contact Factory for Other Voltage Options
Ultra Low Quiescent Current of Typ. 12
mA
Ultra Low Noise: 11.5
mV
RMS
from 100 Hz to 100 kHz
Very Low Dropout: 130 mV Typical at 200 mA
±2%
Accuracy Over Load/Line/Temperature
High PSRR: 68 dB at 1 kHz
Power Good Output
Internal Soft−Start to Limit the Inrush Current
Thermal Shutdown and Current Limit Protections
Stable with a 1
mF
Ceramic Output Capacitor
Available in TSOP−5 and XDFN 1.5 x 1.5 mm Package
Active Output Discharge for Fast Turn−Off
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
(Note: Microdot may be in either location)
PIN CONNECTIONS
IN 1
GND 2
EN 3
TSOP−5
1
OUT
V
OUT
5
OUT
Typical Applications
4 PG
•
Satellite Radio Receivers, GPS
•
Rear View Camera, Electronic Mirrors, Lane Change Detectors
•
Portable Entertainment Systems
V
IN
IN
C
IN
ON
OFF
NCV8752
EN
GND
PG
OUT
100k
V
PG
C
OUT
1
mF
IN
N/C
EN
XDFN6
(Top view)
PG
GND
Figure 1. Typical Application Schematic
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 19 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
January, 2016 − Rev. 1
Publication Order Number:
NCV8752/D
NCV8752
IN
EN
0.8 V
ENABLE
LOGIC
BANDGAP
REFERENCE
UVLO
THERMAL
SHUTDOWN
−
+
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT
AUTO LOW
POWER MODE
PG
ACTIVE
DISCHARGE
−
+
GND
DELAY
EN
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
XDFN 6
1
2
3
4
5
6
1
Pin No.
TSOP−5
5
4
2
3
Pin Name
OUT
PG
GND
EN
N/C
IN
Description
Regulated output voltage pin. A small 1
mF
ceramic capacitor is needed from this pin to
ground to assure stability.
Open Drain Power Good Output.
Power supply ground. Connected to the die through the lead frame. Soldered to the
copper plane allows for effective heat dissipation.
Enable pin. Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts
the regulator into shutdown mode.
Not connected. This pin can be tied to ground to improve thermal dissipation.
Input pin. A small capacitor is needed from this pin to ground to assure stability.
www.onsemi.com
2
NCV8752
ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (Note 1)
Output Voltage
Enable Input
Power Good Output
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
Symbol
V
IN
V
OUT
V
EN
V
PG
t
SC
T
J(MAX)
T
STG
ESD
HBM
ESD
MM
Value
−0.3 V to 6 V
−0.3 V to V
IN
+ 0.3 V
−0.3 V to V
IN
+ 0.3 V
−0.3 V to V
IN
+ 0.3 V
Indefinite
125
−55 to 125
2000
200
Unit
V
V
V
V
s
°C
°C
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114),
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115),
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
(Note 3)
Rating
Thermal Characteristics, TSOP−5,
Thermal Resistance, Junction−to−Air
Thermal Characteristics, XDFN6 1.5x1.5mm
Thermal Resistance, Junction−to−Air
3. Single component mounted on 1 oz FR 4 PCB with 645 mm
2
cu area.
Symbol
R
qJA
R
qJA
Value
224
149
Unit
°C/W
°C/W
www.onsemi.com
3
NCV8752
ELECTRICAL CHARACTERISTICS
−40°C
≤
T
J
≤
125
°C;
V
IN
= V
OUT(NOM)
+ 0.3 V or 2.0 V, whichever is greater; I
OUT
= 10 mA, C
IN
= C
OUT
= 1
mF,
unless otherwise noted.
Typical values are at T
J
= +25°C (Note 4)
Parameter
Operating Input Voltage
Undervoltage lock−out
Output Voltage Accuracy
Line Regulation
Load Regulation
Load Transient
Dropout voltage (Note 5)
Output Current Limit
Quiescent current
Ground current
Shutdown current
EN Pin Threshold Voltage
High Threshold
Low Threshold
EN Pin Input Current
Turn−on Time
V
IN
rising
V
OUT
+ 0.3 V
≤
V
IN
≤
5.5 V, I
OUT
= 0 − 200 mA
V
OUT
+ 0.3 V
≤
V
IN
≤
5.5 V, I
OUT
= 10 mA
I
OUT
= 0 mA to 200 mA
I
OUT
= 1 mA to 200 mA or 200 mA to 1 mA in
1
ms,
C
OUT
= 1
ms
I
OUT
= 200 mA, V
OUT(nom)
= 2.5 V
V
OUT
= 90% V
OUT(nom)
I
OUT
= 0 mA
I
OUT
= 200 mA
V
EN
≤
0.4 V, T
J
= +25°C
V
EN
≤
0 V, V
IN
= 5.5 V
V
EN
Voltage increasing
V
EN
Voltage decreasing
V
EN
= 5.5 V
C
OUT
= 1.0
mF,
I
OUT
= 0 mA to 200 mA
From V
OUT
= 10% V
OUT(NOM)
to 95%
V
OUT(NOM)
C
OUT
= 1.0
mF,
I
OUT
= 0 mA to 200 mA
From assertion of the EN to 95% V
OUT(NOM)
Power Supply Rejection Ratio
V
IN
= 3 V, V
OUT
= 2.5 V
I
OUT
= 150 mA
f = 100 Hz
f = 1 kHz
f = 10 kHz
V
EN_HI
V
EN_LO
I
EN
t
ON1
0.9
0.4
100
80
500
nA
ms
Test Conditions
Symbol
V
IN
UVLO
V
OUT
Reg
LINE
Reg
LOAD
Tran
LOAD
V
DO
I
CL
I
Q
I
GND
I
DIS
210
Min
2.0
1.2
−2
300
20
±90
130
400
12
150
0.12
0.55
1
200
550
25
1.5
Typ
Max
5.5
1.9
+2
Unit
V
V
%
mV/V
mV/mA
mV
mV
mA
mA
mA
mA
mA
V
t
ON2
PSRR
200
70
68
53
11.5
160
−
20
−
ms
dB
Output Noise Voltage
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
POWER GOOD OUTPUT
PG Threshold Voltage
PG Threshold Voltage
Hysteresis
PG Output Low Voltage
PG Pin Leakage
PG time−out delay
PG reaction time
V
OUT
= 2.5 V, V
IN
= 3 V, I
OUT
= 200 mA
f = 100 Hz to 100 kHz
Temperature increasing from T
J
= +25°C
Temperature falling from T
SD
V
N
T
SD
T
SDH
mV
rms
°C
°C
V
OUT
decreasing
V
OUT
increasing
Measured on V
OUT
I
OUT(PG)
= 1 mA
V
IN
= V
OUT(NOM)
+ 0.3 V
NCV8752A
NCV8752B
NCV8752A
NCV8752B
V
PG−
V
PG+
90
92
92
94
2
0.1
0.002
94
96
%V
OUT
%V
OUT
%V
OUT
0.4
1
V
mA
ms
ms
t
RD
t
RR
2
200
2
5
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested
at T
J
= T
A
= 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as
possible.
5. Characterized when V
OUT
falls 100 mV below the regulated voltage at V
IN
= V
OUT(NOM)
+ 0.3 V.
www.onsemi.com
4
NCV8752
TYPICAL CHARACTERISTICS
50 mV/div
V
IN
= 2 V
V
OUT
= 0.8 V
C
IN
= C
OUT
= 1
mF
t
RISE
= t
FALL
= 1
ms
50 mV/div
V
OUT
= 0.8 V
V
OUT
= 0.8 V
V
IN
= 2 V
V
OUT
= 0.8 V
C
IN
= C
OUT
= 1
mF
t
RISE
= t
FALL
= 1
ms
100 mA/div
30 mA/div
I
OUT
= 30 mA
I
OUT
= 1 mA
I
OUT
= 100 mA
I
OUT
= 1 mA
20
ms/div
50
ms/div
Figure 3. Load Transient Response, 1 mA −
30 mA NCV8752A/B, V
OUT
= 0.8 V
Figure 4. Load Transient Response, 1 mA −
100 mA NCV8752A/B, V
OUT
= 0.8 V
100 mV/div
V
IN
= 2 V
V
OUT
= 0.8 V
C
IN
= C
OUT
= 1
mF
t
RISE
= t
FALL
= 1
ms
50 mV/div
V
OUT
= 0.8 V
V
IN
= 2 V
V
OUT
= 0.8 V
C
IN
= C
OUT
= 1
mF
t
RISE
= t
FALL
= 1
ms
V
OUT
= 0.8 V
I
OUT
= 200 mA
100 mA/div
I
OUT
= 110 mA
I
OUT
= 10 mA
20
ms/div
200 mA/div
I
OUT
= 1 mA
50
ms/div
Figure 5. Load Transient Response, 10 mA −
110 mA NCV8752A/B, V
OUT
= 0.8 V
V
IN
= 2 V
V
OUT
= 0.8 V
C
IN
= C
OUT
= 1
mF
t
RISE
= t
FALL
= 1
ms
50 mV/div
V
OUT
= 0.8 V
Figure 6. Load Transient Response, 1 mA −
200 mA NCV8752A/B, V
OUT
= 0.8 V
V
IN
= 2 V
V
OUT
= 0.8 V
C
IN
= C
OUT
= 1
mF
t
RISE
= t
FALL
= 1
ms
V
OUT
= 0.8 V
100 mV/div
I
OUT
= 210 mA
200 mA/div
200 mA/div
I
OUT
= 10 mA
20
ms/div
I
OUT
= 1 mA
I
OUT
= 200 mA
50
ms/div
Figure 7. Load Transient Response, 10 mA −
210 mA NCV8752A/B, V
OUT
= 0.8 V
Figure 8. Load Transient Response, 1 mA −
100 mA NCV8752A/B, V
OUT
= 0.8 V
www.onsemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
