NCN5192
HART Modem
Description
The NCN5192 is a single−chip, CMOS modem for use in highway
addressable remote transducer (HART) field instruments and masters.
The modem and a few external passive components provide all of the
functions needed to satisfy HART physical layer requirements
including modulation, demodulation, receive filtering, carrier detect,
and transmit−signal shaping. In addition, the NCN5192 also has an
integrated DAC for low-BOM current loop slave transmitter
implementation.
The NCN5192 uses phase continuous frequency shift keying (FSK)
at 1200 bits per second. To conserve power the receive circuits are
disabled during transmit operations and vice versa. This provides the
half−duplex operation used in HART communications.
Features
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MARKING
DIAGRAM
1
1
32
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Single−chip, Half−duplex 1200 Bits per Second FSK Modem
Bell 202 Shift Frequencies of 1200 Hz and 2200 Hz
3.0 V
−
5.5 V Power Supply
Transmit−signal Wave Shaping
Receive Band−pass Filter
Low Power: Optimal for Intrinsically Safe Applications
Compatible with 3.3 V or 5 V Microcontroller
Internal Oscillator Requires 460.8 kHz, 920 kHz or 1.8 MHz Crystal
or Ceramic Resonator
SPI Communication
Integrated 16 bit Sigma-Delta DAC
Meets HART Physical Layer Requirements
Industrial Temperature Range of
−40°C
to +85°C
Available in 32−pin NQFP Package
These are Pb−Free Devices
QFN32
CASE 488AM
NCN
5192
AWLYYWW
G
NCN5192 = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
YY
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
Applications
•
HART Multiplexers
•
HART Modem Interfaces
•
4
−
20 mA Loop Powered Transmitters
©
Semiconductor Components Industries, LLC, 2014
February, 2014
−
Rev. 3
1
Publication Order Number:
NCN5192/D
NCN5192
BLOCK DIAGRAM
VDD
VDDA
RxAFI
RxAF
RxD
RxD _ENH
Demodulator
Logic
Rx Comp
Rx HP Filter
RxA
FSK _IN
AREF
CD
Carrier Detect
Counter
Carrier Comp
DEMODULATOR
CDREF
TxD
RTS
CS
SCLK
DATA
VPOR
KICK
RESET
Numeric
Controlled
Oscillator
Sine
Shaper
TxA
FSK _OUT
MODULATOR
NCN5192
SPI
DAC
JUMP
DAC
DACREF
POR
BIAS
Crystal
Oscillator
CLK 1
CLK 2
CBIAS
VSS VSSA
XOUT XIN
Figure 1. Block Diagram NCN5192
ELECTRICAL SPECIFICATIONS
Table 1. ABSOLUTE MAXIMUM RATINGS
(Note 1)
Symbol
T
A
T
S
T
J
V
DD
V
IN
, V
OUT
Ambient Temperature
Storage Temperature
Junction Temperature
Supply Voltage
DC Input, Output
Parameter
Min
−40
−55
−40
−0.3
−0.3
Max
+85
+150
+150
6.0
V
DD
+ 0.3
Units
°C
°C
°C
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. CMOS devices are damaged by high−energy electrostatic discharge. Devices must be stored in conductive foam or with all pins shunted.
Precautions should be taken to avoid application of voltages higher than the maximum rating. Stresses above absolute maximum ratings
may result in damage to the device.
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NCN5192
Table 2. DC CHARACTERISTICS
(V
DD
= 3.0 V to 5.5 V, V
SS
= 0 V, T
A
=
−40°C
to +85°C)
Symbol
V
DD
V
IL
V
IH
V
OL
V
OH
C
IN
DC Supply Voltage
Input Voltage, Low
Input Voltage, High
Output Voltage, Low (I
OL
= 0.67 mA)
Output Voltage, High (I
OH
=
−0.67
mA)
Input Capacitance of:
Analog Inputs
RxA
Digital Inputs
Input Leakage Current
Output Leakage Current
Total Power Supply Current
Static Analog Supply Current
Static Digital Current
Dynamic Digital Current
Analog Reference
Carrier Detect Reference (AREF – 0.08 V)
Comparator Bias Current
(RBIAS = 500 kW, AREF = 1.235 V)
5.0 V
3.3 V
5.0 V
3.3 V
5.0 V
3.3 V
5.0 V
175
150
150
0
25
1.2
1.235
2.5
1.15
2.42
2.5
350
3.0 – 5.5 V
3.0 – 5.5 V
3.0 – 5.5 V
3.0 – 5.5 V
2.4
2.9
25
3.5
±500
±10
600
330
370
30
200
2.6
0.7 * V
DD
0.4
Parameter
V
DD
Min
3.0
Typ
Max
5.5
0.3 * V
DD
Units
V
V
V
V
V
pF
pF
pF
nA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
IL
/I
IH
I
OLL
I
DD
I
DDA
I
DDQ
I
DDD
A
REF
CD
REF
(Note 2)
C
BIAS
2. The HART specification requires carrier detect (CD) to be active between 80 and 120 mVp−p. Setting CDREF at AREF
−
0.08 VDC will set
the carrier detect to a nominal 100 mVp−p.
Table 3. AC CHARACTERISTICS
(V
DD
= 3.0 V to 5.5 V, V
SS
= 0 V, T
A
=
−40°C
to +85°C) (Note 3)
Pin Name
RxA
Description
Receive analog input
Leakage current
Frequency – mark (logic 1)
Frequency – space (logic 0)
Output of the high−pass filter
Slew rate
Gain bandwidth (GBW)
Voltage range
Carrier detect and receive filter input
Leakage current
Modulator output
Frequency – mark (logic 1)
Frequency – space (logic 0)
Amplitude (IAREF 1.235 V)
Slew Rate
−
mark (logic 1)
Slew Rate
−
space (logic 0)
Loading (IAREF = 1.235 V)
Receive digital output
Rise/fall time
Carrier detect output
Rise/fall time
1196.9
2194.3
500
1860
3300
Min
Typ
Max
±150
1210
2220
Units
nA
Hz
Hz
V/ms
kHz
V
nA
Hz
Hz
mV
V/s
V/s
kW
ns
ns
1190
2180
1200
2200
0.025
RxAF
150
0.15
V
DD
– 0.15
±500
RxAFI
TxA
30
20
20
RxD
CD
3. The modulator output frequencies are proportional to the input clock frequency (460.8 kHz/920 kHz/1.8 MHz).
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NCN5192
Table 4. MODEM CHARACTERISTICS
(V
DD
= 3.0 V to 5.5 V, V
SS
= 0 V, T
A
=
−40°C
to +85°C)
Parameter
Demodulator jitter
Conditions
1. Input frequencies at 1200 Hz
±
10 Hz, 2200 Hz
±
20 Hz
2. Clock frequency of 460.8 kHz
±
0.1%
3. Input (RxA) asymmetry, 0
Min
Typ
Max
12
Units
% of 1 bit
Table 5. CERAMIC RESONATOR AND CRYSTAL
−
External Clock Specifications
(V
DD
= 3.0 V to 5.5 V, V
SS
= 0 V, T
A
=
−40°C
to +85°C)
Parameter
Resonator
Tolerance
Frequency
Crystal or Resonator, 920 kHz
Tolerance
Frequency
Crystal, 1.8 MHz
Tolerance
Frequency
External
Duty cycle
Amplitude
40
Min
Typ
Max
1.0
Units
%
kHz
%
kHz
%
MHz
%
V
460.8
921.6
1.0
1.843
50
V
OH
−
V
OL
1.0
60
Table 6. DAC CHARACTERISTICS
(V
DD
= 3.0 V to 5.5 V, V
SS
= 0 V, T
A
=
−40°C
to +85°C)
Parameter
Bandwidth
Accuracy
Return−to−Zero
Non Return−to−Zero
Maximum Output
Return−to−Zero
Non Return−to−Zero
Differential Non−linearity
Return−to−Zero
Non Return−to−Zero
Integral Non−linearity
Return−to−Zero
Non Return−to−Zero
Min
Typ
10
16
14
AVDD/2
AVDD
0.5
0.25
2.0
1.0
0.75
0.75
4.0
2.0
Max
Units
Hz
Bit
Bit
V
V
LSB
LSB
LSB
LSB
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NCN5192
TYPICAL APPLICATION
POWER
3.0 to 5.5 V
VDD
RESET
VPOR
KICK
RxD_ENH
RxD
CD
TxD
AREF
VDDA
VDDA
RxAFI
RxAF
RxA
HART IN
NCN5192
CDREF
LM285
mC
RTS
CS
DATA
CLK
CLK1
CLK2
XOUT
1. 8 MHz
XIN
DAC
JUMP
DACREF
TxA
S
VDDA
HART &
4 – 20 mA OUT
CBIAS
VSS
VSSA
Figure 2. Application Diagram NCN5192
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