The Si3861BDV includes a P- and N-Channel MOSFET in a
single TSOP-6 package. The low on-resistance P-Channel
TrenchFET
®
is tailored for use as a load switch. The
N-Channel, with an external resistor, can be used as a level-
shift to drive the P-Channel load-switch. The N-Channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si3861DV operates on
supply lines from 4.5 to 20 V, and can drive loads up to 2.3 A.
APPLICATION CIRCUITS
Si3861BDV
10
t
f
4
V
IN
Q2
6
6
Time ( µS)
R1
C1
6
t
r
2, 3
V
OUT
8
t
d(off)
4
5
ON/OFF
Q1
C
o
LOAD
2
t
d(on)
C
i
1
R2
R2
GND
0
0
2
4
6
R2 (kΩ)
Note:
For R2 switching
variations with
other
V
IN
/R1
combinations See Typical Characteristics
8
10
12
I
L
= 1 A
V
ON/OFF
= 3
V
C
i
= 10 µF
C
o
= 1 µF
COMPONENTS
R1
R2
C1
Pull-Up Resistor
Optional Slew-Rate Control
Optional Slew-Rate Control
Typical 10 kΩ to 1 mΩ*
Typical 0 to 100 kΩ*
Typical 1000 pF
The Si3861BDV is ideally suited for high-side load switching
in portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Note:
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
www.vishay.com
1
New Product
Si3861BDV
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si3861BDV
TSOP-6
Top
View
S2
Q2
R2
1
6
R1, C1
6
R1, C1
D2
2
5
ON/OFF
5
ON/OFF
Q1
4
2, 3
D2
D2
3
4
S2
1
Ordering Information:
Si3861BDV-T1-E3 (Lead (Pb)-free)
Si3861BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
R2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Input Voltage
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conduction
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
Ω)
Continuous
a, b
Pulsed
b, c
Symbol
V
IN
V
ON/OFF
I
L
I
S
P
D
T
J
, T
stg
ESD
Limit
20
8
± 2.3
±4
-1
0.83
- 55 to 150
3
W
°C
kV
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Continuous Current)
a
Maximum Junction-to-Foot (Q2)
Symbol
R
thJA
R
thJF
Typical
120
60
Maximum
150
80
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
ON Characteristics
Input Voltage Range
On-Resistance (P-Channel) at 1 A
V
IN
V
IN
= 10 V
R
DS(on)
V
ON/OFF
= 1.5 V, I
D
= 1 A
V
IN
= 5.0 V
V
IN
= 4.5 V
On-State (P-Channel) Drain-Current
I
D(on)
V
IN-OUT
≤
0.2 V, V
IN
= 10 V, V
ON/OFF
= 1.5 V
V
IN-OUT
≤
0.3 V, V
IN
= 5 V, V
ON/OFF
= 1.5 V
1
1
4.5
0.060
0.096
0.115
20
0.075
0.120
0.145
A
Ω
V
I
FL
V
SD
V
IN
= 30 V, V
ON/OFF
= 0 V
I
S
= - 1 A
- 0.8
1
-1
µA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Surface Mounted on FR4 board.
b. V
IN
= 12 V, V
ON/OFF
= 8 V, T
A
= 25 °C.
c. Pulse test: pulse width
≤
300
µs,
duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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