IRF9530NSPbF
IRF9530NLPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D
D
D
Benefits
Advanced Process Technology
Surface Mount (IRF9530NS)
Low-profile through-hole(IRF9530NL)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF9530NL) is available for low-
profile applications.
Base part number
IRF9530NLPbF
IRF9530NSPbF
Package Type
TO-262
D2-Pak
-100V
0.20
-14A
S
G
D2 Pak
IRF9530NSPbF
G
TO-262 Pak
IRF9530NLPbF
S
D
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRF9530NLPbF (Obsolete)
IRF9530NSTRLPbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Max.
-14
-10
-56
3.8
79
0.53
± 20
250
-8.4
7.9
-5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
–––
Max.
1.9
40
Units
°C/W
1
2016-5-27
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
IRF9530NS/LPbF
Min. Typ. Max. Units
Conditions
-100 –––
–––
V V
GS
= 0V, I
D
= -250µA
––– -0.11 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.20
V
GS
= -10V, I
D
= -8.4A
-2.0
––– -4.0
V V
DS
= V
GS
, I
D
= -250µA
3.2
–––
–––
S V
DS
= -50V, I
D
= -8.4A
––– –––
-25
V
DS
= -100V, V
GS
= 0V
µA
––– ––– -250
V
DS
= -80V,V
GS
= 0V,T
J
=150°C
––– ––– -100
V
GS
= -20V
nA
––– –––
100
V
GS
= 20V
––– –––
58
I
D
= -8.4A
nC
V
DS
= -80V
––– –––
8.3
V
GS
= -10V See Fig.6 and 13
––– –––
32
–––
15
–––
V
DD
= -50V
–––
58
–––
I
D
= -8.4A
ns
–––
45
–––
R
G
= 9.1
–––
46
–––
R
D
= 6.2See Fig.6
Between lead,
–––
7.5
–––
nH
and center of die contact
––– 760
–––
V
GS
= 0V
pF
V
DS
= -25V
––– 260
–––
ƒ = 1.0MHz, See Fig. 5
––– 170
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
130
650
Max. Units
-14
-56
-1.6
190
970
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= -8.4A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= -8.4A
nC di/dt = -100A/µs
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting T
J
= 25°C, L = 7.0mH, R
G
= 25, I
AS
= -8.4A. (See fig. 12)
I
SD
-8.4A,
di/dt
-490A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs;
duty cycle
2%.
Uses IRF9530N data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
2016-5-27
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