®
BUL742A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS
s
FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL742A is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
bs
O
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage
(I
C
= 0, I
B
≤
2 A, t
p
< 10µs, T
j
< 150
o
C)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at Tc = 25 C
Storage Temperature
Max. Operating Junction Temperature
o
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
t
le
P
e
ro
uc
d
3
1
2
s)
t(
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value
950
400
V
(BR)EBO
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
1/5
October 2003
BUL742A
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
CEO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Test Conditions
V
CE
= 950 V
V
CE
= 400 V
I
C
= 10 mA
L = 25 mH
400
Min.
Typ.
Max.
100
250
Unit
µA
µA
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Storage Time
Fall Time
Avalanche Energy
I
E
= 1 mA
12
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
I
C
= 1 A
I
C
= 3.5 A
I
C
= 3.5 A
I
C
= 800 mA
I
C
= 10 mA
V
CC
= 250 V
I
B1
= 0.5 A
t
p
= 30
µs
L = 2 mH
I
B
= 0.2 A
I
B
= 1 A
I
B
= 1 A
V
CE
= 3 V
V
CE
= 5 V
t
s
t
f
E
sb
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
Safe Operating Areas
O
bs
et
l
o
ro
P
e
uc
d
)-
(s
t
b
O
I
C
= 2.5 A
I
B2
= -1 A
(see figure 2)
(see figure 1)
6
so
te
le
r
P
16
10
d
o
ct
u
24
0.5
1.5
1.5
40
s)
(
V
V
V
V
V
0.9
100
µs
ns
mJ
Derating Curve
2/5
BUL742A
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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