IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
I2P
AK
BYV42G-200
Dual ultrafast power diode
Rev. 01 — 11 January 2011
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package.
1.2 Features and benefits
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
O(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average output current
square-wave pulse;
δ
= 0.5 ;
T
mb
≤
104 °C; both diodes
conducting; see
Figure 1;
see
Figure 2
T
j(init)
= 25 °C; t
p
= 10 ms;
sine-wave pulse; per diode
t
p
= 2 µs;
δ
= 0.001
HBM; C = 250 pF; R = 1.5 kΩ;
all pins
I
F
= 15 A; T
j
= 150 °C;
see
Figure 4
Conditions
Min
-
-
Typ
-
-
Max Unit
200
30
V
A
I
FSM
I
RRM
V
ESD
non-repetitive peak
forward current
repetitive peak reverse
current
electrostatic discharge
voltage
forward voltage
-
-
-
-
-
-
160
0.2
8
A
A
kV
Static characteristics
V
F
-
0.78 0.85 V
NXP Semiconductors
BYV42G-200
Dual ultrafast power diode
Quick reference data
…continued
Parameter
reverse recovery time
Conditions
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs; T
j
= 25 °C;
ramp recovery; see
Figure 5
I
R
= 1 A; I
F
= 0.5 A; T
j
= 25 °C;
step recovery; measured at
reverse current = 0.25 A;
see
Figure 6
Min
-
Typ
20
Max Unit
28
ns
Table 1.
Symbol
t
rr
Dynamic characteristics
-
13
22
ns
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
A1
K
A2
K
anode 1
cathode
anode 2
mounting base; connected to cathode
A1
K
sym125
Simplified outline
Graphic symbol
A2
1
2
3
SOT226A (I2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYV42G-200
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226A
Type number
BYV42G-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 11 January 2011
2 of 11
NXP Semiconductors
BYV42G-200
Dual ultrafast power diode
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
DC
square-wave pulse;
δ
= 0.5 ; T
mb
≤
104 °C;
both diodes conducting; see
Figure 1;
see
Figure 2
δ
= 0.5 ; t
p
= 25 µs; T
mb
≤
104 °C; per diode
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C;
per diode
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C;
per diode
I
RRM
I
RSM
T
stg
T
j
V
ESD
repetitive peak reverse current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins
δ
= 0.001 ; t
p
= 2 µs
t
p
= 100 µs
Conditions
Min
-
-
-
-
Max
200
200
200
30
Unit
V
V
V
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
-
-
-
-
-
-40
-
-
30
150
160
0.2
0.2
150
150
8
A
A
A
A
A
°C
°C
kV
20
P
tot
(W)
0.5
15
0.2
10
δ
=1
003aac342
15
P
tot
(W)
2.2
10
4.0
2.8
1.9
003aac343
a = 1.57
0.1
5
5
0
0
5
10
15
20
25
I
F(AV)
(A)
0
0
5
10
I
F(AV)
(A)
15
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV42G-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 11 January 2011
3 of 11
NXP Semiconductors
BYV42G-200
Dual ultrafast power diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode;
see
Figure 3
R
th(j-a)
thermal resistance from
junction to ambient
in free air
Min
-
-
-
Typ
-
-
60
Max
1.4
2.4
-
Unit
K/W
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
003aac345
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYV42G-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 11 January 2011
4 of 11
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