MGA-425P8
GaAs Enchancement-mode PHEMT
Power Amplifier in 2x2 mm
2
LPCC Package
Data Sheet
Description
Avago Technologies’s MGA-425P8 power amplifier is designed
for wireless application in the 2–10 GHz frequency range. The
PA has a high power efficiency (PAE) achieved through the
use of Avago Technologies’s proprietary GaAs Enhancement-
mode pHEMT process.
MGA-425P8 is housed in a miniature 2.0 x 2.0 x 0.75 mm 8-lead
leadless-plastic-chip-carrier (LPCC) package. The compact foot-
print, low profile couple with the excellent thermal efficiency
of the LPCC package makes the MGA-425P8 an ideal choice as
power amplifier that saves board space.
On-chip bias circuitry allows operation from a single +3.3V
power supply. The output of the amplifier is near to 50Ω (be-
low 2:1 VSWR) around 4.9–5.8 GHz. This makes MGA-425P8 an
ideal choice as power amplifier for broadband IEEE 802.11a
system as well as other high performance wireless application
in the 2–10 GHz frequency range.
One external resistor (RBias) is used to set the bias current of
the device over a wide range.
This allows the designer to use the same part in several circuit
positions and tailor the output power/linearity performance,
and current consumption, to suit each position.
Features
•
Near 50Ω broadband output match
•
Single +3.3V supply
•
High Gain & OIP3
•
Miniature 2 x 2 x 0.75 mm
LPCC package
•
Pb-free & MSL-1 package
•
Tape-and-Reel packaging
option available
Specifications @ 5.25 GHz, 3.3V, 58 mA (typ)
•
13.3 dBm Linear Pout @ 5% EVM
•
10.3% PAE @ +13.3 dBm Pout
•
12 dBm Linear Pout @ 3% EVM
•
7.6% PAE @ + 12 dBm Pout
•
47% PAE @ P1dB
•
20.3 dBm P1dB
•
32.9 dBm OIP3
•
16 dB Gain
•
1.7 dB NF
Pin Connections and Package Marking
2.0 x 2.0 x 0.75 mm 8-lead LPCC
Pin 1 (NC)
Pin 2 (RFin)
Pin 3 (NC)
Pin 4 (NC)
Pin 8 (NC)
2YX
Top View
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 5 (RBias)
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Note:
Package marking provides orientation and identification
“2Y” = Device Code
“X” = Data code indicates the month of manufacture.
Pin 1 (NC)
Pin 2 (RFin)
Pin 3 (NC)
Pin 4 (NC)
Pin 8 (NC)
Pin 7 (RFout, VD)
Simplified Schematic
Vd
I
bias
R
bias
V
bias
RFin
5
2
Bias
Id
=
I
ds +
I
bias
I
ds
GND
Pin 6 (NC)
Pin 5 (RBias)
7
RFout, VD
Bottom View
Note:
Use Die Attach Padded for electrical grounding and thermal dissipa-
tion
(NC)
1, 3, 4, 6, 8
MGA-425P8 Absolute Maximum Ratings
[1]
Symbol
V
DS
I
DS
P
diss
P
in
max.
T
CH
T
STG
θ
ch_b
Parameter
Drain – Supply Voltage
[2]
Drain Current
[2]
Total Power Dissipation
[3]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
[4]
Units
V
A
W
dBm
°C
°C
°C/W
Absolute
Maximum
5
100
0.5
13
150
-65 to 150
34.2
Notes:
1. Operation of this device above any
one of these parameters may cause per-
manent damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature T
B
is
25°C. Derate 29 mW/°C for T
B
> 133 °C.
4. Channel-to-board thermal resistance mea-
sured using 150°C Liquid Crystal Measure-
ment method.
Product Consistency Distribution Charts at 5.25 GHz, 3.3V RBias = 680Ω
[5, 6]
150
180
250
120
Stdev = 0.9
150
120
Stdev = 0.28
200
Stdev = 1.22
90
-3 Std
90
-3 Std
+3 Std
150
-3 Std
+3 Std
60
60
30
30
0
14.8
100
50
0
29
31
33
OIP3 (dBm)
35
37
15.3
15.8
16.3
16.8
17.3
0
51
53
55
57
59
61
63
65
GAIN (dB)
IDS (mA)
Figure 1. OIP3;
LSL = 29 dBm, Nominal = 32.9 dBm.
240
200
160
Figure 2. GAIN;
LSL = 14.5 dB, Nominal = 16 dB, USL= 17.5 dB.
180
Figure 3. IDS;
LSL = 51 mA, Nominal = 58 mA, USL = 65 mA.
Notes:
Stdev = 3
Stdev = 0.46
150
120
-3 Std
120
80
40
0
18.3
90
60
30
0
-3 Std
5. Distribution data sample size is 500
samples taken from 3 different wafers and
3 different lots. Future wafers allocated
to this product may have nominal values
anywhere between the upper and lower
limits.
6. Measurements are made on production
test board, which represents a trade-off
between optimal OIP3, P1dB, Gain and
VSWR. Circuit losses have been de-embed-
ded from actual measurements.
44
49
54
59
PAE (%)
19.3
20.3
P1dB (dBm)
21.3
22.3
34
39
Figure 4. P1dB;
LSL = 18.25 dBm, Nominal = 20.3 dBm.
Figure 5. PAE;
LSL = 33.5 %, Nominal = 47 %.
2
MGA-425P8 Electrical Specifications
T
A
= 25°C, DC bias for RF parameter is Vds = 3.3V and R
bias
= 680Ω (unless specified otherwise)
Symbol
I
ds
G
NF
OIP3
P1dB
PAE
EVM
EVM
Notes:
Parameter and Test Condition
Device Current
Gain
[1]
Noise Figure
[1]
Output 3
rd
Order Intercpt Point
[1,2]
Output 1dB Compressed
[1]
Power Added Efficiency
[1]
Error Vector Magnitude
[3]
at Pout=12 dBm
Freq=5.25 GHz
Freq=5.25 GHz
Freq=5.25 GHz
Freq=5.25 GHz
Freq=5.25 GHz
Units
mA
dB
dB
dBm
dBm
%
%
%
Min.
51
14.5
–
29
18.25
33.5
–
–
Typ.
58
16
1.7
32.9
20.3
47
5
3
Max.
65
17.5
–
–
–
–
–
–
Error Vector Magnitude
[3]
at Pout=13.3 dBm
1. Measurement obtained using production test board described in Figure 6 and PAE tested at P1dB condition.
2. 5.25GHz OIP3 test condition: F1 = 5.25 GHz, F2 = 5.255 GHz and Pin = -5 dBm per tone.
3. EVM test condition: 802.11a 64QAM/54 Mbps OFDM Modulation and Freq = 5.25 GHz.
Vd= +3.3V
1000 pF
2.2 µF
680
Ω
3.3 nH
0.6 pF
0.6 pF
5
2
2.2 pF
MGA-425P8
7
2.7 nH
15
Ω
1, 3, 4, 6, 8
1.5 pF
1 pF
Figure 6. Simplified schematic of 5.25 GHz production test board used for
Gain, NF, OIP3 , P1dB, PAE and EVM measurements. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been
de-embedded from actual measurements.
3
MGA-425P8 Typical Performance Curves, Vds = 3.3V, Ids = 58 mA (at 25°C unless specified otherwise)
36
22
21
20
22
20
18
34
GAIN (dB)
32
P1dB (dBm)
OIP3 (dBm)
19
18
16
14
30
-40°C
+25°C
+85°C
28
17
16
-40°C
+25°C
+85°C
12
10
-40°C
+25°C
+85°C
26
2
2.5
3
3.5
4
4.5
5
5.5
6
2
2.5
3
3.5
4
4.5
5
5.5
6
2
2.5
3
3.5
4
4.5
5
5.5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. OIP3 vs. Temperature and
Frequency.
1.8
1.6
1.4
Figure 8. P1dB vs. Temperature and
Frequency.
7
6
5
65.5
65.4
65.3
EVM (%)
Current (mA)
Figure 9. GAIN vs. Temperature and
Frequency.
FMIN (dB)
EVM (%)
1.2
1
0.8
0.6
0.4
0
2
3
Vd=4V Ids=60 mA
Vd=3.3 Ids=65 mA
Vd=3.3V Ids=80 mA
4
3
2
1
0
-6 -4 -2
65.2
65.1
65
64.9
1
4
5
6
7
0
2
4
6
64.8
8 10 12 14 16
FREQUENCY (GHz)
Pout (dBm)
Figure 10. FMIN vs. Frequency.
Figure 11. EVM and Current vs. Pout.
4
Ids (mA)
MGA-425P8 Typical Performance Curves, Vds = 3.3V (at 25°C unless specified otherwise)
40
35
30
25
20
15
10
24
22
20
P1dB (dBm)
GAIN (dB)
20
18
16
14
12
10
8
6
0
20
40
60
80
100
OIP3 (dBm)
18
16
14
12
0
20
40
60
80
100
10
0
20
40
60
80
100
IDS (mA)
IDS (mA)
IDS (mA)
Figure 12. OIP3 vs. Ids at 5.25 GHz.
Figure 13. P1dB vs. Ids at 5.25 GHz.
Figure 14. GAIN vs. Ids at 5.25 GHz.
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
20
40
60
IDS (mA)
80
100
Vd=4V
Vd=3.3V
12
10
Rbias (K Ohm)
8
6
4
2
0
FMIN (dB)
0
20
40
60
IDS (mA)
80
100
120
Figure 15. FMIN vs. Ids at 5.25 GHz.
Figure 16. RBias vs. Ids (Vds=3.3V).
5
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